Hussain, S., Rahman, M., & Prodhan, M. (2020). Modeling of In₀.₁₇Ga₀.₈₃N/InₓGa₁₋ₓN/AlyGa₁₋yN light emitting diode structure on ScAlMgO₄ (0001) substrate for high intensity red emission. Semiconductor Physics Quantum Electronics & Optoelectronics.
Чикаго стиль цитування (17-те видання)Hussain, S., Md.M Rahman, та Md.T Prodhan. "Modeling of In₀.₁₇Ga₀.₈₃N/InₓGa₁₋ₓN/AlyGa₁₋yN Light Emitting Diode Structure on ScAlMgO₄ (0001) Substrate for High Intensity Red Emission." Semiconductor Physics Quantum Electronics & Optoelectronics 2020.
Стиль цитування MLA (8-ме видання)Hussain, S., et al. "Modeling of In₀.₁₇Ga₀.₈₃N/InₓGa₁₋ₓN/AlyGa₁₋yN Light Emitting Diode Structure on ScAlMgO₄ (0001) Substrate for High Intensity Red Emission." Semiconductor Physics Quantum Electronics & Optoelectronics, 2020.