Modeling of In₀.₁₇Ga₀.₈₃N/InₓGa₁₋ₓN/AlyGa₁₋yN light emitting diode structure on ScAlMgO₄ (0001) substrate for high intensity red emission

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2020
• ISSN: 1560-8034
• Main Authors: Hussain, S., Rahman, Md.M., Prodhan, Md.T.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2020
• Subjects: Optoelectronics and optoelectronic devices
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/215909
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Modeling of In₀.₁₇Ga₀.₈₃N/InₓGa₁₋ₓN/AlyGa₁₋yN light emitting diode structure on ScAlMgO₄ (0001) substrate for high intensity red emission / S. Hussain, Md.M. Rahman, Md.T. Prodhan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 4. — С. 408-414. — Бібліогр.: 35 назв. — англ.

An In₀.₁₇Ga₀.₈₃N/InₓGa₁₋ₓN/AlyGa₁₋yN light–emitting diode (LED) structure on ScAlMgO₄ (0001) substrate is modeled for high-intensity red emission. The high indium composition (In > 15%) in the c-plane polar quantum well (QW) for longer-wavelength emission degrades the structural and optical prope...