Manifestation of the channeling effect when manufacturing JFET transistors

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2020
• Hauptverfasser: Verbitskiy, V.G., Voevodin, S.V., Fedulov, V.V., Kalistyi, G.V., Verbitskiy, D.O.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2020
• Schlagworte: Physics of microelectronic devices
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/215913
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Manifestation of the channeling effect when manufacturing JFET transistors / V.G. Verbitskiy, S.V. Voevodin, V.V. Fedulov, G.V. Kalistyi, D.O. Verbitskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 4. — С. 379-384. — Бібліогр.: 12 назв. — англ.

The proposed work covers the tasks of such areas as reducing input currents and bias voltage of integrated operational amplifiers (ICs OA) manufactured according to BiFET technology, the prospect of using JFET transistors in digital circuit technology, Si CMOS technology at 22 nm node and beyond, ma...