Influence of electrically neutral nickel atoms on electrical and recombination parameters of silicon
The results of this study show that the creation of clusters from impurity nickel atoms almost completely suppresses the generation of thermal donors within the temperature range 450 to 1200 °C. The composition of these clusters was determined using the technique of energy dispersive X-ray spectrosc...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2020 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2020
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/215916 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Influence of electrically neutral nickel atoms on electrical and recombination parameters of silicon / M.K. Bakhadyrkhanov, B.K. Ismaylov, S.A. Tachilin, K.A. Ismailov, N.F. Zikrillaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 4. — С. 361-365. — Бібліогр.: 11 назв. — англ. |