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Influence of electrically neutral nickel atoms on electrical and recombination parameters of silicon

The results of this study show that the creation of clusters from impurity nickel atoms almost completely suppresses the generation of thermal donors within the temperature range 450 to 1200 °C. The composition of these clusters was determined using the technique of energy dispersive X-ray spectrosc...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2020
Hauptverfasser:	Bakhadyrkhanov, M.K., Ismaylov, B.K., Tachilin, S.A., Ismailov, K.A., Zikrillaev, N.F.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2020
Schlagworte:	Semiconductor Physics
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/215916
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Influence of electrically neutral nickel atoms on electrical and recombination parameters of silicon / M.K. Bakhadyrkhanov, B.K. Ismaylov, S.A. Tachilin, K.A. Ismailov, N.F. Zikrillaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 4. — С. 361-365. — Бібліогр.: 11 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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