Features of current transport in Al–Al₂O₃–-CdTe–Mo structure

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2020
• Main Authors: Uteniyazov, A.K., Leyderman, A.Yu., Ayukhanov, R.A., Esenbaeva, E.S., Gafurova, M.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2020
• Subjects: Semiconductor Physics
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/215919
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Features of current transport in Al–Al₂O₃–-CdTe–Mo structure / A.K. Uteniyazov, A.Yu. Leyderman, R.A. Ayukhanov, E.S. Esenbaeva, M.V. Gafurova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 4. — С. 339-345. — Бібліогр.: 15 назв. — англ.

The results of studies of the current-voltage characteristics of the Al–Al₂O₃–-CdTe–Mo structure in the forward direction of the current in the dark and under light illumination have been presented. These characteristics have four sections of the power-law dependence of the current on the voltage i...