Properties of nanosized ZnO:Ho films deposited using explosive evaporation
The properties of nanosized ZnO:Ho thin films deposited by the explosive evaporation method have been studied. This work is aimed at studying the effect of high deposition rate on the oxide characteristics of interest from the viewpoint of photocatalysis, namely: morphology and structure, electrical...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2021 |
| Main Authors: | , , , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2021
|
| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/216183 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Properties of nanosized ZnO:Ho films deposited using explosive evaporation / А.М. Kаsumov, V.V. Strelchuk, О.F. Kolomys, О.І. Bykov, V.О. Yukhymchuk, М.М. Zahornyi, K.А. Kоrotkov, V.М. Kаravaieva, S.F. Kоrychev, А.І. Ievtushenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 2. — С. 139-147. — Бібліогр.: 36 назв. — англ. |