Properties of nanosized ZnO:Ho films deposited using explosive evaporation

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2021
• Hauptverfasser: Kаsumov, А.М., Strelchuk, V.V., Kolomys, О.F., Bykov, О.І., Yukhymchuk, V.О., Zahornyi, М.М., Kоrotkov, K.А., Kаravaieva, V.М., Kоrychev, S.F., Ievtushenko, А.І.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2021
• Schlagworte: Semiconductor physics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/216183
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Properties of nanosized ZnO:Ho films deposited using explosive evaporation / А.М. Kаsumov, V.V. Strelchuk, О.F. Kolomys, О.І. Bykov, V.О. Yukhymchuk, М.М. Zahornyi, K.А. Kоrotkov, V.М. Kаravaieva, S.F. Kоrychev, А.І. Ievtushenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 2. — С. 139-147. — Бібліогр.: 36 назв. — англ.

The properties of nanosized ZnO:Ho thin films deposited by the explosive evaporation method have been studied. This work is aimed at studying the effect of high deposition rate on the oxide characteristics of interest from the viewpoint of photocatalysis, namely: morphology and structure, electrical...