Preparation of quaternary compounds Cu₂ZnSnS₄ by using the self-propagating high-temperature synthesis

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2021
• ISSN: 1560-8034
• Hauptverfasser: Bacherikov, Yu.Yu., Mirzayev, M.N., Zhuk, A.G., Okhrimenko, O.B., Doroshkevich, N.V., Kidalov, V.V., Goroneskul, V.Yu.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2021
• Schlagworte: Semiconductor physics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/216229
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Preparation of quaternary compounds Cu₂ZnSnS₄ by using the self-propagating high-temperature synthesis / Yu.Yu. Bacherikov, M.N. Mirzayev, A.G. Zhuk, O.B. Okhrimenko, N.V. Doroshkevich, V.V. Kidalov, V.Yu. Goroneskul // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 3. — С. 272-276. — Бібліогр.: 24 назв. — англ.

The possibility of preparing finely dispersed Cu₂ZnSnS₄ by using the method of self-propagating high-temperature synthesis has been studied in this work. Investigations of Raman scattering and IR-Fourier spectroscopy of the synthesized finely dispersed material have been carried out. The analysis of...