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Growth-sector dependence of morphological, structural, and optical features in boron-doped HPHT diamond crystals

Semiconducting boron-doped diamond single crystals of cubo-octahedral habit with prevalent development of octahedron {111} faces, and insignificant area of cube {001}, rhombo-dodecahedron {110}, and tetragon-trioctahedron {311} faces were obtained using solution-melt crystallization at high pressure...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2021
Hauptverfasser:	Strelchuk, V.V., Nikolenko, A.S., Lytvyn, P.M., Ivakhnenko, S.O., Kovalenko, T.V., Danylenko, I.M., Malyuta, S.V.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2021
Schlagworte:	Semiconductor physics
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/216230
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Growth-sector dependence of morphological, structural, and optical features in boron-doped HPHT diamond crystals / V.V. Strelchuk, A.S. Nikolenko, P.M. Lytvyn, S.O. Ivakhnenko, T.V. Kovalenko, I.M. Danylenko, S.V. Malyuta // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 3. — С. 261-271. — Бібліогр.: 29 назв. — англ.

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