Non-recombination injection mode

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2021
• Main Authors: Leyderman, A.Yu., Ayukhanov, R.A., Turmanova, R.M., Uteniyazov, A.K., Esenbaeva, E.S.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2021
• Subjects: Semiconductor physics
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/216232
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Non-recombination injection mode / A.Yu. Leyderman, R.A. Ayukhanov, R.M. Turmanova, A.K. Uteniyazov, E.S. Esenbaeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 3. — С. 248-254. — Бібліогр.: 16 назв. — англ.

A new type of injection regime is considered – a non-recombination one, which can be realized in the forward direction of the current in structures of the --⁺ type under conditions of opposite directions of ambipolar diffusion and drift of non-equilibrium carriers. This is possible only if the accum...