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Non-recombination injection mode

A new type of injection regime is considered – a non-recombination one, which can be realized in the forward direction of the current in structures of the --⁺ type under conditions of opposite directions of ambipolar diffusion and drift of non-equilibrium carriers. This is possible only if the accum...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2021
Hauptverfasser:	Leyderman, A.Yu., Ayukhanov, R.A., Turmanova, R.M., Uteniyazov, A.K., Esenbaeva, E.S.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2021
Schlagworte:	Semiconductor physics
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/216232
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Non-recombination injection mode / A.Yu. Leyderman, R.A. Ayukhanov, R.M. Turmanova, A.K. Uteniyazov, E.S. Esenbaeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 3. — С. 248-254. — Бібліогр.: 16 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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