Exploring the characteristics of SnO₂ nanoparticles doped organic blend for low-cost nanoelectronics applications

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2021
• Hauptverfasser: Algidsawi, A.J.K., Hashim, A., Hadi, A., Habeeb, M.A.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2021
• Schlagworte: Optoelectronics and optoelectronic devices
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/216287
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Exploring the characteristics of SnO₂ nanoparticles doped organic blend for low-cost nanoelectronics applications / A.J.K. Algidsawi, A. Hashim, A. Hadi, M.A. Habeeb // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 4. — С. 472-477. — Бібліогр.: 31 назв. — англ.

The PVA/PVP/SnO₂ nanostructure films were fabricated using the casting technique. The structure, dielectric, and optical characteristics of PVA/PVP/SnO₂ nanostructures were studied for pressure sensors. Results of studying the dielectric characteristics showed that the dielectric constant, dielectri...