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Dark current and 1/f noise in forward-biased InAs photodiodes

Dark current and low-frequency noise have been studied in forward-biased InAs photodiodes within the temperature range 77… 290 K. Photodiodes were fabricated by diffusion of Cd into n-InAs single crystal substrates. It has been shown that, at temperatures >130 K, the forward current is defined by...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2021
ISSN:	1560-8034
Hauptverfasser:	Tetyorkin, V.V., Sukach, A.V., Tkachuk, A.I.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2021
Schlagworte:	Optoelectronics and optoelectronic devices
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/216288
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Dark current and 1/f noise in forward-biased InAs photodiodes / V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 4. — С. 466-471. — Бібліогр.: 17 назв. — англ.

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