Dark current and 1/f noise in forward-biased InAs photodiodes

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2021
• Main Authors: Tetyorkin, V.V., Sukach, A.V., Tkachuk, A.I.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2021
• Subjects: Optoelectronics and optoelectronic devices
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/216288
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Dark current and 1/f noise in forward-biased InAs photodiodes / V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 4. — С. 466-471. — Бібліогр.: 17 назв. — англ.

Dark current and low-frequency noise have been studied in forward-biased InAs photodiodes within the temperature range 77… 290 K. Photodiodes were fabricated by diffusion of Cd into n-InAs single crystal substrates. It has been shown that, at temperatures >130 K, the forward current is defined by...