Dark current and 1/f noise in forward-biased InAs photodiodes
Dark current and low-frequency noise have been studied in forward-biased InAs photodiodes within the temperature range 77… 290 K. Photodiodes were fabricated by diffusion of Cd into n-InAs single crystal substrates. It has been shown that, at temperatures >130 K, the forward current is defined by...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2021 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2021
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/216288 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Dark current and 1/f noise in forward-biased InAs photodiodes / V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 4. — С. 466-471. — Бібліогр.: 17 назв. — англ. |
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