Structure and electrical resistance of the passivating ZnSe layer on Ge

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2021
• Hauptverfasser: Maslov, V.P., Fedorenko, A.V., Kladko, V.P., Gudymenko, O.Yo., Bozhko, K.M., Zashchepkina, N.M.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2021
• Schlagworte: Hetero- and low-dimensional structures
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/216294
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Structure and electrical resistance of the passivating ZnSe layer on Ge / V.P. Maslov, A.V. Fedorenko, V.P. Kladko, O.Yo. Gudymenko, K.M. Bozhko, N.M. Zashchepkina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 4. — С. 425-430. — Бібліогр.: 18 назв. — англ.

In this article, we have considered the p-i-n Ge photodetector with a ZnSe passivating layer. The passivation layer needs to be protected photodetector from dust, raindrops, and other external influences. However, this passivation layer can cause errors in the photodetector image. When creating a pa...