Analytic theory for the current-voltage characteristic of a nanowire radial p-i-n diode
In this article, the process of current flow in a nanowire radial p-i-n diode has been considered in detail. It has been shown that cylindrical geometry of the structure gives rise to specific asymmetry of the concentration distribution for current carriers injected into the i-layer, which is opposi...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2021 |
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2021
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/216295 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Analytic theory for the current-voltage characteristic of a nanowire radial p-i-n diode / V.L. Borblik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 4. — С. 419-424. — Бібліогр.: 17 назв. — англ. |