Shashikala, B., & Nagabhushana, B. (2021). Reduction of reverse leakage current at the TiO₂/GaN interface in field plate Ni/Au/-GaN Schottky diodes. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago Style (17th ed.) CitationShashikala, B.N, and B.S Nagabhushana. "Reduction of Reverse Leakage Current at the TiO₂/GaN Interface in Field Plate Ni/Au/-GaN Schottky Diodes." Semiconductor Physics Quantum Electronics & Optoelectronics 2021.
MLA (8th ed.) CitationShashikala, B.N, and B.S Nagabhushana. "Reduction of Reverse Leakage Current at the TiO₂/GaN Interface in Field Plate Ni/Au/-GaN Schottky Diodes." Semiconductor Physics Quantum Electronics & Optoelectronics, 2021.
Warning: These citations may not always be 100% accurate.