Shashikala, B., & Nagabhushana, B. (2021). Reduction of reverse leakage current at the TiO₂/GaN interface in field plate Ni/Au/-GaN Schottky diodes. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago-Zitierstil (17. Ausg.)Shashikala, B.N, und B.S Nagabhushana. "Reduction of Reverse Leakage Current at the TiO₂/GaN Interface in Field Plate Ni/Au/-GaN Schottky Diodes." Semiconductor Physics Quantum Electronics & Optoelectronics 2021.
MLA-Zitierstil (8. Ausg.)Shashikala, B.N, und B.S Nagabhushana. "Reduction of Reverse Leakage Current at the TiO₂/GaN Interface in Field Plate Ni/Au/-GaN Schottky Diodes." Semiconductor Physics Quantum Electronics & Optoelectronics, 2021.
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.