Reduction of reverse leakage current at the TiO₂/GaN interface in field plate Ni/Au/-GaN Schottky diodes
This paper presents the fabrication procedure of a TiO₂ passivated field plate Schottky diode and gives a comparison of Ni/Au/-GaN Schottky barrier diodes without a field plate and with a field plate of varying diameters from 50 to 300 µm. The influence of field oxide (TiO₂) on the leakage current o...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2021 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2021
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/216298 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Reduction of reverse leakage current at the TiO₂/GaN interface in field plate Ni/Au/-GaN Schottky diodes / B.N. Shashikala, B.S. Nagabhushana // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 4. — С. 399-406. — Бібліогр.: 27 назв. — англ. |
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