APA (7th ed.) Citation

Belfennache, D., Madi, D., Yekhlef, R., Toukal, L., Maouche, N., Akhtar, M., & Zahra, S. (2021). Thermal annealing ambiance effect on phosphorus passivation and reactivation mechanisms in silicon-based Schottky diodes hydrogenated by MW-ECR plasma. Semiconductor Physics Quantum Electronics & Optoelectronics.

Chicago Style (17th ed.) Citation

Belfennache, D., D. Madi, R. Yekhlef, L. Toukal, N. Maouche, M.S Akhtar, and S. Zahra. "Thermal Annealing Ambiance Effect on Phosphorus Passivation and Reactivation Mechanisms in Silicon-based Schottky Diodes Hydrogenated by MW-ECR Plasma." Semiconductor Physics Quantum Electronics & Optoelectronics 2021.

MLA (8th ed.) Citation

Belfennache, D., et al. "Thermal Annealing Ambiance Effect on Phosphorus Passivation and Reactivation Mechanisms in Silicon-based Schottky Diodes Hydrogenated by MW-ECR Plasma." Semiconductor Physics Quantum Electronics & Optoelectronics, 2021.

Warning: These citations may not always be 100% accurate.