Belfennache, D., Madi, D., Yekhlef, R., Toukal, L., Maouche, N., Akhtar, M., & Zahra, S. (2021). Thermal annealing ambiance effect on phosphorus passivation and reactivation mechanisms in silicon-based Schottky diodes hydrogenated by MW-ECR plasma. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago-Zitierstil (17. Ausg.)Belfennache, D., D. Madi, R. Yekhlef, L. Toukal, N. Maouche, M.S Akhtar, und S. Zahra. "Thermal Annealing Ambiance Effect on Phosphorus Passivation and Reactivation Mechanisms in Silicon-based Schottky Diodes Hydrogenated by MW-ECR Plasma." Semiconductor Physics Quantum Electronics & Optoelectronics 2021.
MLA-Zitierstil (8. Ausg.)Belfennache, D., et al. "Thermal Annealing Ambiance Effect on Phosphorus Passivation and Reactivation Mechanisms in Silicon-based Schottky Diodes Hydrogenated by MW-ECR Plasma." Semiconductor Physics Quantum Electronics & Optoelectronics, 2021.