Thermal annealing ambiance effect on phosphorus passivation and reactivation mechanisms in silicon-based Schottky diodes hydrogenated by MW-ECR plasma
The main objective of this work is to investigate the effect of thermal annealing in a forming gas atmosphere on the mechanism of deactivation and reactivation of phosphorus in silicon-based Schottky diodes. Firstly, the microwave plasma power, initial phosphorus concentration in the samples, and hy...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2021 |
| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2021
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/216300 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Thermal annealing ambiance effect on phosphorus passivation and reactivation mechanisms in silicon-based Schottky diodes hydrogenated by MW-ECR plasma / D. Belfennache, D. Madi, R. Yekhlef, L. Toukal, N. Maouche, M.S. Akhtar, S. Zahra // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 4. — С. 378-389. — Бібліогр.: 51 назв. — англ. |