Thermal annealing ambiance effect on phosphorus passivation and reactivation mechanisms in silicon-based Schottky diodes hydrogenated by MW-ECR plasma

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2021
• Hauptverfasser: Belfennache, D., Madi, D., Yekhlef, R., Toukal, L., Maouche, N., Akhtar, M.S., Zahra, S.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2021
• Schlagworte: Semiconductor physics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/216300
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Thermal annealing ambiance effect on phosphorus passivation and reactivation mechanisms in silicon-based Schottky diodes hydrogenated by MW-ECR plasma / D. Belfennache, D. Madi, R. Yekhlef, L. Toukal, N. Maouche, M.S. Akhtar, S. Zahra // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 4. — С. 378-389. — Бібліогр.: 51 назв. — англ.

The main objective of this work is to investigate the effect of thermal annealing in a forming gas atmosphere on the mechanism of deactivation and reactivation of phosphorus in silicon-based Schottky diodes. Firstly, the microwave plasma power, initial phosphorus concentration in the samples, and hy...