Nanostructured SiC as a promising material for the cold electron emitters
In this paper, novel cold electron emitters based on nanostructured SiC layers covering the Si(001) substrate have been proposed. Their main advantage is an extremely simple, cost-effective manufacturing process based on standard microelectronics-grade silicon wafers, with no ultra-high vacuum requi...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2021 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2021
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/216303 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Nanostructured SiC as a promising material for the cold electron emitters / A.M. Goriachko, M.V. Strikha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 4. — С. 355-361. — Бібліогр.: 16 назв. — англ. |