Nanostructured SiC as a promising material for the cold electron emitters

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2021
• Main Authors: Goriachko, A.M., Strikha, M.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2021
• Subjects: Semiconductor physics
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/216303
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Nanostructured SiC as a promising material for the cold electron emitters / A.M. Goriachko, M.V. Strikha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 4. — С. 355-361. — Бібліогр.: 16 назв. — англ.

In this paper, novel cold electron emitters based on nanostructured SiC layers covering the Si(001) substrate have been proposed. Their main advantage is an extremely simple, cost-effective manufacturing process based on standard microelectronics-grade silicon wafers, with no ultra-high vacuum requi...