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Nanostructured SiC as a promising material for the cold electron emitters

In this paper, novel cold electron emitters based on nanostructured SiC layers covering the Si(001) substrate have been proposed. Their main advantage is an extremely simple, cost-effective manufacturing process based on standard microelectronics-grade silicon wafers, with no ultra-high vacuum requi...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2021
Hauptverfasser:	Goriachko, A.M., Strikha, M.V.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2021
Schlagworte:	Semiconductor physics
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/216303
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Nanostructured SiC as a promising material for the cold electron emitters / A.M. Goriachko, M.V. Strikha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 4. — С. 355-361. — Бібліогр.: 16 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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