Ferromagnetic nanoclusters in Si:Mn and GaMnAs annealed at high temperature–pressure
We report the results of defect structures studies of silicon implanted at different temperatures with Mn ions (Si:Mn) and of GaMnAs layers, next annealed under ambient and high pressures. An influence of annealing conditions on structural properties of Si:Mn and GaMnAs layers was investigated. It h...
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| Date: | 2009 |
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| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України
2009
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/5986 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Ferromagnetic nanoclusters in Si:Mn and GaMnAs annealed at high temperature–pressure / J. Bak-Misiuk, P. Romanowski, J. Domagala, A. Misiuk, E. Dynowska, E. Lusakowska, A. Barcz, J. Sadowski, W. Caliebe // Физика и техника высоких давлений. — 2009. — Т. 19, № 2. — С. 32-40. — Бібліогр.: 9 назв. — англ. |