Atomistic models for R1–xPrxBa2Cu3O7–δ (R = Y and lanthanides) and related oxides

• Date: 2009
• Main Authors: Chroneos, A.I., Goulatis, I.L., Vovk, R.V., Zavgorodniy, A.A., Obolenskii, M.A., Petrenko, A.G., Samoilov, A.V.
• Format: Article
• Language: English
• Published: Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України 2009
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/5990
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Atomistic models for R1–xPrxBa2Cu3O7–δ (R = Y and lanthanides) and related oxides / A.I. Chroneos, I.L. Goulatis, R.V. Vovk, A.A. Zavgorodniy, M.A. Obolenskii, A.G. Petrenko, A.V. Samoilov // Физика и техника высоких давлений. — 2009. — Т. 19, № 2. — С. 7-13. — Бібліогр.: 17 назв. — англ.

We report the results of defect structures studies of silicon implanted at different temperatures with Mn ions (Si:Mn) and of GaMnAs layers, next annealed under ambient and high pressures. An influence of annealing conditions on structural properties of Si:Mn and GaMnAs layers was investigated. It h...