Defects in high temperature and high pressure processed Si:N revealed by deuterium plasma treatment

• Published in: Физика и техника высоких давлений
• Date: 2010
• Main Authors: Misiuk, A., Barcz, A., Ulyashin, A., Prujszczyk, M., Bak-Misiuk, J., Formanek, P.
• Format: Article
• Language: English
• Published: Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України 2010
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/69328
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Defects in high temperature and high pressure processed Si:N revealed by deuterium plasma treatment / A. Misiuk, A. Barcz, A. Ulyashin, M. Prujszczyk, J. Bak-Misiuk, P. Formanek // Физика и техника высоких давлений. — 2010. — Т. 20, № 4. — С. 53-59. — Бібліогр.: 4 назв. — рос.

Deuterium is accumulated by defects in nitrogen-implanted silicon (Si:N). This effect is investigated for Si:N processed at HT ≤ 1400 K, also under enhanced hydrostatic pressure, HP ≤ 1.1 GPa. Si:N was prepared from Czochralski grown silicon by N₂⁺ implantation at E = 140 keV with nitrogen doses, DN...