Microplasticity of subsurface layers of diamond-like semiconductors under microindentation

Experimental confirmations of the influence of the free surface of a chip on processes of plastic deforming under indentation such as a decrease of the effective activation energy of dislocations with reduction of load on the indenter and a considerable decrease of temperature of the beginning of po...

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Опубліковано в: :Физика и техника высоких давлений
Дата:2005
Автори: Nadtochiy, V.A., Alyokhin, V.P., Golodenko, M.M.
Формат: Стаття
Мова:English
Опубліковано: Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України 2005
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/70108
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Microplasticity of subsurface layers of diamond-like semiconductors under microindentation / V.A. Nadtochiy, V.P. Alyokhin, M.M. Golodenko // Физика и техника высоких давлений. — 2005. — Т. 15, № 1. — С. 44-49. — Бібліогр.: 20 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-70108
record_format dspace
spelling Nadtochiy, V.A.
Alyokhin, V.P.
Golodenko, M.M.
2014-10-28T19:29:33Z
2014-10-28T19:29:33Z
2005
Microplasticity of subsurface layers of diamond-like semiconductors under microindentation / V.A. Nadtochiy, V.P. Alyokhin, M.M. Golodenko // Физика и техника высоких давлений. — 2005. — Т. 15, № 1. — С. 44-49. — Бібліогр.: 20 назв. — англ.
0868-5924
PACS: 61.72.Ff
https://nasplib.isofts.kiev.ua/handle/123456789/70108
Experimental confirmations of the influence of the free surface of a chip on processes of plastic deforming under indentation such as a decrease of the effective activation energy of dislocations with reduction of load on the indenter and a considerable decrease of temperature of the beginning of polygonization processes, when annealing microhardness rosettes in the field of small impresses, are obtained. A possibility of dislocation motion by means of creeping at temperatures lower than brittleness threshold temperature was shown on the example of GaAs.
en
Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України
Физика и техника высоких давлений
Microplasticity of subsurface layers of diamond-like semiconductors under microindentation
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Microplasticity of subsurface layers of diamond-like semiconductors under microindentation
spellingShingle Microplasticity of subsurface layers of diamond-like semiconductors under microindentation
Nadtochiy, V.A.
Alyokhin, V.P.
Golodenko, M.M.
title_short Microplasticity of subsurface layers of diamond-like semiconductors under microindentation
title_full Microplasticity of subsurface layers of diamond-like semiconductors under microindentation
title_fullStr Microplasticity of subsurface layers of diamond-like semiconductors under microindentation
title_full_unstemmed Microplasticity of subsurface layers of diamond-like semiconductors under microindentation
title_sort microplasticity of subsurface layers of diamond-like semiconductors under microindentation
author Nadtochiy, V.A.
Alyokhin, V.P.
Golodenko, M.M.
author_facet Nadtochiy, V.A.
Alyokhin, V.P.
Golodenko, M.M.
publishDate 2005
language English
container_title Физика и техника высоких давлений
publisher Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України
format Article
description Experimental confirmations of the influence of the free surface of a chip on processes of plastic deforming under indentation such as a decrease of the effective activation energy of dislocations with reduction of load on the indenter and a considerable decrease of temperature of the beginning of polygonization processes, when annealing microhardness rosettes in the field of small impresses, are obtained. A possibility of dislocation motion by means of creeping at temperatures lower than brittleness threshold temperature was shown on the example of GaAs.
issn 0868-5924
url https://nasplib.isofts.kiev.ua/handle/123456789/70108
citation_txt Microplasticity of subsurface layers of diamond-like semiconductors under microindentation / V.A. Nadtochiy, V.P. Alyokhin, M.M. Golodenko // Физика и техника высоких давлений. — 2005. — Т. 15, № 1. — С. 44-49. — Бібліогр.: 20 назв. — англ.
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