Pressure-induced transformations during annealing of silicon implanted with oxygen
Enhanced hydrostatic pressure (HP, up to 1.5 GPa) applied during annealing at up to 1570 K (HT) of silicon with oxygen introduced by implantation (Si:O), exerts pronounced effect on the transformation of oxygen admixture. In particular, HP affects the microstructure of Si:O and a creation of oxygen-...
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| Опубліковано в: : | Физика и техника высоких давлений |
|---|---|
| Дата: | 2006 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України
2006
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/70257 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Pressure-induced transformations during annealing of silicon implanted with oxygen / A. Misiuk, B.M. Efros // Физика и техника высоких давлений. — 2006. — Т. 16, № 4. — С. 49-63. — Бібліогр.: 40 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862691610583629824 |
|---|---|
| author | Misiuk, A. Efros, B.M. |
| author_facet | Misiuk, A. Efros, B.M. |
| citation_txt | Pressure-induced transformations during annealing of silicon implanted with oxygen / A. Misiuk, B.M. Efros // Физика и техника высоких давлений. — 2006. — Т. 16, № 4. — С. 49-63. — Бібліогр.: 40 назв. — англ. |
| collection | DSpace DC |
| container_title | Физика и техника высоких давлений |
| description | Enhanced hydrostatic pressure (HP, up to 1.5 GPa) applied during annealing at up to 1570 K (HT) of silicon with oxygen introduced by implantation (Si:O), exerts pronounced effect on the transformation of oxygen admixture. In particular, HP affects the microstructure of Si:O and a creation of oxygen-enriched (for implanted oxygen dose, D ≤ 1·10¹⁷ cm⁻²) or continuous (for D ≥ 6·10¹⁷ cm⁻²) buried SiO2 layers. Numerous treatment parameters contribute to the HP-induced phenomena in processed Si:O, among these are the HPaffected mobility and solubility of implanted oxygen as well as of silicon interstitials and of other implantation-induced defects and so the stability of oxygen clusters/precipitates; the misfit at the SiO₂/Si boundary is tuned by HP.
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| first_indexed | 2025-12-07T16:16:18Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-70257 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 0868-5924 |
| language | English |
| last_indexed | 2025-12-07T16:16:18Z |
| publishDate | 2006 |
| publisher | Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України |
| record_format | dspace |
| spelling | Misiuk, A. Efros, B.M. 2014-11-01T16:03:01Z 2014-11-01T16:03:01Z 2006 Pressure-induced transformations during annealing of silicon implanted with oxygen / A. Misiuk, B.M. Efros // Физика и техника высоких давлений. — 2006. — Т. 16, № 4. — С. 49-63. — Бібліогр.: 40 назв. — англ. 0868-5924 PACS: 61.10.−i, 61.72.Yx, 81.40.Vw https://nasplib.isofts.kiev.ua/handle/123456789/70257 Enhanced hydrostatic pressure (HP, up to 1.5 GPa) applied during annealing at up to 1570 K (HT) of silicon with oxygen introduced by implantation (Si:O), exerts pronounced effect on the transformation of oxygen admixture. In particular, HP affects the microstructure of Si:O and a creation of oxygen-enriched (for implanted oxygen dose, D ≤ 1·10¹⁷ cm⁻²) or continuous (for D ≥ 6·10¹⁷ cm⁻²) buried SiO2 layers. Numerous treatment parameters contribute to the HP-induced phenomena in processed Si:O, among these are the HPaffected mobility and solubility of implanted oxygen as well as of silicon interstitials and of other implantation-induced defects and so the stability of oxygen clusters/precipitates; the misfit at the SiO₂/Si boundary is tuned by HP. The author thanks D. Sc. A. Barcz, Dr J. Ratajczak, and Mr M. Prujszczyk (Institute of Electron Technology, Warsaw, Poland), Dr I.V. Antonova (ISP, RAS, Novosibirsk, Russia), and m. sc. B. Surma (IEMT, Warsaw, Poland) for technical assistance, experimental data and valuable discussion. en Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України Физика и техника высоких давлений Pressure-induced transformations during annealing of silicon implanted with oxygen Article published earlier |
| spellingShingle | Pressure-induced transformations during annealing of silicon implanted with oxygen Misiuk, A. Efros, B.M. |
| title | Pressure-induced transformations during annealing of silicon implanted with oxygen |
| title_full | Pressure-induced transformations during annealing of silicon implanted with oxygen |
| title_fullStr | Pressure-induced transformations during annealing of silicon implanted with oxygen |
| title_full_unstemmed | Pressure-induced transformations during annealing of silicon implanted with oxygen |
| title_short | Pressure-induced transformations during annealing of silicon implanted with oxygen |
| title_sort | pressure-induced transformations during annealing of silicon implanted with oxygen |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/70257 |
| work_keys_str_mv | AT misiuka pressureinducedtransformationsduringannealingofsiliconimplantedwithoxygen AT efrosbm pressureinducedtransformationsduringannealingofsiliconimplantedwithoxygen |