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Pressure-induced transformations during annealing of silicon implanted with oxygen

Enhanced hydrostatic pressure (HP, up to 1.5 GPa) applied during annealing at up to 1570 K (HT) of silicon with oxygen introduced by implantation (Si:O), exerts pronounced effect on the transformation of oxygen admixture. In particular, HP affects the microstructure of Si:O and a creation of oxygen-...

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Published in:Физика и техника высоких давлений
Date:2006
Main Authors: Misiuk, A., Efros, B.M.
Format: Article
Language:English
Published: Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України 2006
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/70257
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Pressure-induced transformations during annealing of silicon implanted with oxygen / A. Misiuk, B.M. Efros // Физика и техника высоких давлений. — 2006. — Т. 16, № 4. — С. 49-63. — Бібліогр.: 40 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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