Pressure-induced structural transformations in Si:V and Si:V, Mn
Semiconductors doped with magnetically active atoms are expected to find application in spintronics. Si samples implanted with Mn⁺ (Si:Mn) or with V⁺ (Si:V) can order magnetically after processing at high temperature (HT) and also under enhanced hydrostatic pressure (HP). This work presents new resu...
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| Veröffentlicht in: | Физика и техника высоких давлений |
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| Datum: | 2008 |
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Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України
2008
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| Zitieren: | Pressure-induced structural transformations in Si:V and Si:V, Mn / A. Misiuk, A. Barcz, L. Chow, J. Bak-Misiuk, P. Romanowski, A. Shalimov, A. Wnuk, B. Surma, R. Vanfleet, M. Prujszczyk // Физика и техника высоких давлений. — 2008. — Т. 18, № 4. — С. 105-111. — Бібліогр.: 12 назв. — англ. |
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Misiuk, A. Barcz, A. Chow, L. Bak-Misiuk, J. Romanowski, P. Shalimov, A. Wnuk, A. Surma, B. Vanfleet, R. Prujszczyk, M. 2014-11-06T18:23:35Z 2014-11-06T18:23:35Z 2008 Pressure-induced structural transformations in Si:V and Si:V, Mn / A. Misiuk, A. Barcz, L. Chow, J. Bak-Misiuk, P. Romanowski, A. Shalimov, A. Wnuk, B. Surma, R. Vanfleet, M. Prujszczyk // Физика и техника высоких давлений. — 2008. — Т. 18, № 4. — С. 105-111. — Бібліогр.: 12 назв. — англ. 0868-5924 PACS: 61.72.Tt, 61.72.–y, 62.50.+p, 78.30.Am https://nasplib.isofts.kiev.ua/handle/123456789/70463 Semiconductors doped with magnetically active atoms are expected to find application in spintronics. Si samples implanted with Mn⁺ (Si:Mn) or with V⁺ (Si:V) can order magnetically after processing at high temperature (HT) and also under enhanced hydrostatic pressure (HP). This work presents new results on structure-related properties of single crystalline Si implanted at 200 keV with V⁺ as well as that co-implanted additionally with Mn⁺ ions (Si:V, Mn), with dosages DV⁺ ≤ 5·10¹⁵ cm⁻² and DMn⁺ = 1·10¹⁵ cm⁻². The samples were processed for 1–5 h at HT ≤ 1270 K under HP ≤ 1.1 GPa. Secondary Ion Mass Spectrometry, Transmission Electron Microscopy, X-ray and related methods were applied for sample characterization. The HT- (HP) treatment affects, among others, solid phase epitaxial re-growth (SPER) of amorphous silicon created at implantation and distribution of implanted species. The authors thank Dr. W.K. Chu and Dr. Z.H. Zhang from the Department of Physics and Texas Centre for Superconductivity, University of Houston, Houston, TX 12345 for their help in preparation of the samples. en Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України Физика и техника высоких давлений Pressure-induced structural transformations in Si:V and Si:V, Mn Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Pressure-induced structural transformations in Si:V and Si:V, Mn |
| spellingShingle |
Pressure-induced structural transformations in Si:V and Si:V, Mn Misiuk, A. Barcz, A. Chow, L. Bak-Misiuk, J. Romanowski, P. Shalimov, A. Wnuk, A. Surma, B. Vanfleet, R. Prujszczyk, M. |
| title_short |
Pressure-induced structural transformations in Si:V and Si:V, Mn |
| title_full |
Pressure-induced structural transformations in Si:V and Si:V, Mn |
| title_fullStr |
Pressure-induced structural transformations in Si:V and Si:V, Mn |
| title_full_unstemmed |
Pressure-induced structural transformations in Si:V and Si:V, Mn |
| title_sort |
pressure-induced structural transformations in si:v and si:v, mn |
| author |
Misiuk, A. Barcz, A. Chow, L. Bak-Misiuk, J. Romanowski, P. Shalimov, A. Wnuk, A. Surma, B. Vanfleet, R. Prujszczyk, M. |
| author_facet |
Misiuk, A. Barcz, A. Chow, L. Bak-Misiuk, J. Romanowski, P. Shalimov, A. Wnuk, A. Surma, B. Vanfleet, R. Prujszczyk, M. |
| publishDate |
2008 |
| language |
English |
| container_title |
Физика и техника высоких давлений |
| publisher |
Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України |
| format |
Article |
| description |
Semiconductors doped with magnetically active atoms are expected to find application in spintronics. Si samples implanted with Mn⁺ (Si:Mn) or with V⁺ (Si:V) can order magnetically after processing at high temperature (HT) and also under enhanced hydrostatic pressure (HP). This work presents new results on structure-related properties of single crystalline Si implanted at 200 keV with V⁺ as well as that co-implanted additionally with Mn⁺ ions (Si:V, Mn), with dosages DV⁺ ≤ 5·10¹⁵ cm⁻² and DMn⁺ = 1·10¹⁵ cm⁻². The samples were processed for 1–5 h at HT ≤ 1270 K under HP ≤ 1.1 GPa. Secondary Ion Mass Spectrometry, Transmission Electron Microscopy, X-ray and related methods were applied for sample characterization. The HT- (HP) treatment affects, among others, solid phase epitaxial re-growth (SPER) of amorphous silicon created at implantation and distribution of implanted species.
|
| issn |
0868-5924 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/70463 |
| citation_txt |
Pressure-induced structural transformations in Si:V and Si:V, Mn / A. Misiuk, A. Barcz, L. Chow, J. Bak-Misiuk, P. Romanowski, A. Shalimov, A. Wnuk, B. Surma, R. Vanfleet, M. Prujszczyk // Физика и техника высоких давлений. — 2008. — Т. 18, № 4. — С. 105-111. — Бібліогр.: 12 назв. — англ. |
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2025-12-07T17:15:05Z |
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