Pressure-induced structural transformations in Si:V and Si:V, Mn

Semiconductors doped with magnetically active atoms are expected to find application in spintronics. Si samples implanted with Mn⁺ (Si:Mn) or with V⁺ (Si:V) can order magnetically after processing at high temperature (HT) and also under enhanced hydrostatic pressure (HP). This work presents new resu...

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Veröffentlicht in:Физика и техника высоких давлений
Datum:2008
Hauptverfasser: Misiuk, A., Barcz, A., Chow, L., Bak-Misiuk, J., Romanowski, P., Shalimov, A., Wnuk, A., Surma, B., Vanfleet, R., Prujszczyk, M.
Format: Artikel
Sprache:English
Veröffentlicht: Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України 2008
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/70463
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Zitieren:Pressure-induced structural transformations in Si:V and Si:V, Mn / A. Misiuk, A. Barcz, L. Chow, J. Bak-Misiuk, P. Romanowski, A. Shalimov, A. Wnuk, B. Surma, R. Vanfleet, M. Prujszczyk // Физика и техника высоких давлений. — 2008. — Т. 18, № 4. — С. 105-111. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-70463
record_format dspace
spelling Misiuk, A.
Barcz, A.
Chow, L.
Bak-Misiuk, J.
Romanowski, P.
Shalimov, A.
Wnuk, A.
Surma, B.
Vanfleet, R.
Prujszczyk, M.
2014-11-06T18:23:35Z
2014-11-06T18:23:35Z
2008
Pressure-induced structural transformations in Si:V and Si:V, Mn / A. Misiuk, A. Barcz, L. Chow, J. Bak-Misiuk, P. Romanowski, A. Shalimov, A. Wnuk, B. Surma, R. Vanfleet, M. Prujszczyk // Физика и техника высоких давлений. — 2008. — Т. 18, № 4. — С. 105-111. — Бібліогр.: 12 назв. — англ.
0868-5924
PACS: 61.72.Tt, 61.72.–y, 62.50.+p, 78.30.Am
https://nasplib.isofts.kiev.ua/handle/123456789/70463
Semiconductors doped with magnetically active atoms are expected to find application in spintronics. Si samples implanted with Mn⁺ (Si:Mn) or with V⁺ (Si:V) can order magnetically after processing at high temperature (HT) and also under enhanced hydrostatic pressure (HP). This work presents new results on structure-related properties of single crystalline Si implanted at 200 keV with V⁺ as well as that co-implanted additionally with Mn⁺ ions (Si:V, Mn), with dosages DV⁺ ≤ 5·10¹⁵ cm⁻² and DMn⁺ = 1·10¹⁵ cm⁻². The samples were processed for 1–5 h at HT ≤ 1270 K under HP ≤ 1.1 GPa. Secondary Ion Mass Spectrometry, Transmission Electron Microscopy, X-ray and related methods were applied for sample characterization. The HT- (HP) treatment affects, among others, solid phase epitaxial re-growth (SPER) of amorphous silicon created at implantation and distribution of implanted species.
The authors thank Dr. W.K. Chu and Dr. Z.H. Zhang from the Department of Physics and Texas Centre for Superconductivity, University of Houston, Houston, TX 12345 for their help in preparation of the samples.
en
Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України
Физика и техника высоких давлений
Pressure-induced structural transformations in Si:V and Si:V, Mn
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Pressure-induced structural transformations in Si:V and Si:V, Mn
spellingShingle Pressure-induced structural transformations in Si:V and Si:V, Mn
Misiuk, A.
Barcz, A.
Chow, L.
Bak-Misiuk, J.
Romanowski, P.
Shalimov, A.
Wnuk, A.
Surma, B.
Vanfleet, R.
Prujszczyk, M.
title_short Pressure-induced structural transformations in Si:V and Si:V, Mn
title_full Pressure-induced structural transformations in Si:V and Si:V, Mn
title_fullStr Pressure-induced structural transformations in Si:V and Si:V, Mn
title_full_unstemmed Pressure-induced structural transformations in Si:V and Si:V, Mn
title_sort pressure-induced structural transformations in si:v and si:v, mn
author Misiuk, A.
Barcz, A.
Chow, L.
Bak-Misiuk, J.
Romanowski, P.
Shalimov, A.
Wnuk, A.
Surma, B.
Vanfleet, R.
Prujszczyk, M.
author_facet Misiuk, A.
Barcz, A.
Chow, L.
Bak-Misiuk, J.
Romanowski, P.
Shalimov, A.
Wnuk, A.
Surma, B.
Vanfleet, R.
Prujszczyk, M.
publishDate 2008
language English
container_title Физика и техника высоких давлений
publisher Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України
format Article
description Semiconductors doped with magnetically active atoms are expected to find application in spintronics. Si samples implanted with Mn⁺ (Si:Mn) or with V⁺ (Si:V) can order magnetically after processing at high temperature (HT) and also under enhanced hydrostatic pressure (HP). This work presents new results on structure-related properties of single crystalline Si implanted at 200 keV with V⁺ as well as that co-implanted additionally with Mn⁺ ions (Si:V, Mn), with dosages DV⁺ ≤ 5·10¹⁵ cm⁻² and DMn⁺ = 1·10¹⁵ cm⁻². The samples were processed for 1–5 h at HT ≤ 1270 K under HP ≤ 1.1 GPa. Secondary Ion Mass Spectrometry, Transmission Electron Microscopy, X-ray and related methods were applied for sample characterization. The HT- (HP) treatment affects, among others, solid phase epitaxial re-growth (SPER) of amorphous silicon created at implantation and distribution of implanted species.
issn 0868-5924
url https://nasplib.isofts.kiev.ua/handle/123456789/70463
citation_txt Pressure-induced structural transformations in Si:V and Si:V, Mn / A. Misiuk, A. Barcz, L. Chow, J. Bak-Misiuk, P. Romanowski, A. Shalimov, A. Wnuk, B. Surma, R. Vanfleet, M. Prujszczyk // Физика и техника высоких давлений. — 2008. — Т. 18, № 4. — С. 105-111. — Бібліогр.: 12 назв. — англ.
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AT romanowskip pressureinducedstructuraltransformationsinsivandsivmn
AT shalimova pressureinducedstructuraltransformationsinsivandsivmn
AT wnuka pressureinducedstructuraltransformationsinsivandsivmn
AT surmab pressureinducedstructuraltransformationsinsivandsivmn
AT vanfleetr pressureinducedstructuraltransformationsinsivandsivmn
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first_indexed 2025-12-07T17:15:05Z
last_indexed 2025-12-07T17:15:05Z
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