Pressure-induced structural transformations in Si:V and Si:V, Mn
Semiconductors doped with magnetically active atoms are expected to find application in spintronics. Si samples implanted with Mn⁺ (Si:Mn) or with V⁺ (Si:V) can order magnetically after processing at high temperature (HT) and also under enhanced hydrostatic pressure (HP). This work presents new resu...
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| Zitieren: | Pressure-induced structural transformations in Si:V and Si:V, Mn / A. Misiuk, A. Barcz, L. Chow, J. Bak-Misiuk, P. Romanowski, A. Shalimov, A. Wnuk, B. Surma, R. Vanfleet, M. Prujszczyk // Физика и техника высоких давлений. — 2008. — Т. 18, № 4. — С. 105-111. — Бібліогр.: 12 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860078604814123008 |
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| author | Misiuk, A. Barcz, A. Chow, L. Bak-Misiuk, J. Romanowski, P. Shalimov, A. Wnuk, A. Surma, B. Vanfleet, R. Prujszczyk, M. |
| author_facet | Misiuk, A. Barcz, A. Chow, L. Bak-Misiuk, J. Romanowski, P. Shalimov, A. Wnuk, A. Surma, B. Vanfleet, R. Prujszczyk, M. |
| citation_txt | Pressure-induced structural transformations in Si:V and Si:V, Mn / A. Misiuk, A. Barcz, L. Chow, J. Bak-Misiuk, P. Romanowski, A. Shalimov, A. Wnuk, B. Surma, R. Vanfleet, M. Prujszczyk // Физика и техника высоких давлений. — 2008. — Т. 18, № 4. — С. 105-111. — Бібліогр.: 12 назв. — англ. |
| collection | DSpace DC |
| container_title | Физика и техника высоких давлений |
| description | Semiconductors doped with magnetically active atoms are expected to find application in spintronics. Si samples implanted with Mn⁺ (Si:Mn) or with V⁺ (Si:V) can order magnetically after processing at high temperature (HT) and also under enhanced hydrostatic pressure (HP). This work presents new results on structure-related properties of single crystalline Si implanted at 200 keV with V⁺ as well as that co-implanted additionally with Mn⁺ ions (Si:V, Mn), with dosages DV⁺ ≤ 5·10¹⁵ cm⁻² and DMn⁺ = 1·10¹⁵ cm⁻². The samples were processed for 1–5 h at HT ≤ 1270 K under HP ≤ 1.1 GPa. Secondary Ion Mass Spectrometry, Transmission Electron Microscopy, X-ray and related methods were applied for sample characterization. The HT- (HP) treatment affects, among others, solid phase epitaxial re-growth (SPER) of amorphous silicon created at implantation and distribution of implanted species.
|
| first_indexed | 2025-12-07T17:15:05Z |
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Физика и техника высоких давлений 2008, том 18, № 4
105
PACS: 61.72.Tt, 61.72.–y, 62.50.+p, 78.30.Am
A. Misiuk1, A. Barcz1, L. Chow2, J. Bak-Misiuk3, P. Romanowski3,
A. Shalimov4, A. Wnuk5, B. Surma5, R. Vanfleet6, M. Prujszczyk1
PRESSURE-INDUCED STRUCTURAL TRANSFORMATIONS
IN Si:V and Si:V, Mn
1Institute of Electron Technology
Al. Lotnikow 46, 02-668 Warsaw, Poland
E -mail: misiuk@ite.waw.pl
2Department of Physics, University of Central Florida
Orlando, FL 32816, USA
3Institute of Physics, PAS
02-668 Warsaw, Poland
4Forschunszentrum Rossendorf-Dresden
01328 Dresden, Germany
5Institute of Electronic Materials Technology
01-919 Warsaw, Poland
6Department of Physics, Brigham Young University
Provo, UT 84602, USA
Semiconductors doped with magnetically active atoms are expected to find application in
spintronics. Si samples implanted with Mn+ (Si:Mn) or with V+ (Si:V) can order mag-
netically after processing at high temperature (HT) and also under enhanced hydrostatic
pressure (HP). This work presents new results on structure-related properties of single
crystalline Si implanted at 200 keV with V+ as well as that co-implanted additionally with
Mn+ ions (Si:V, Mn), with dosages DV+ ≤ 5·1015 cm–2 and DMn+ = 1·1015 cm–2. The
samples were processed for 1–5 h at HT ≤ 1270 K under HP ≤ 1.1 GPa. Secondary Ion
Mass Spectrometry, Transmission Electron Microscopy, X-ray and related methods were
applied for sample characterization. The HT- (HP) treatment affects, among others, solid
phase epitaxial re-growth (SPER) of amorphous silicon created at implantation and dis-
tribution of implanted species.
Introduction
Most investigations on semiconductors doped with magnetically active atoms,
which are expected to be applied as diluted magnetic semiconductors (DMS), are still
Физика и техника высоких давлений 2008, том 18, № 4
106
focused on ferromagnetic Mn-doped III–V semiconductors, such as Ga1–xMnxAs,
and on ZnO and similar oxides doped with transition metals (TM) [1,2].
Recently, Si samples implanted with Mn+ (Si:Mn) [3] as well as with Cr+ or V+
(Si:Cr and Si:V) have been also demonstrated to order magnetically after proc-
essing at high temperature (HT) under enhanced hydrostatic pressure (HP) of inert
gas ambient [4,5].
The HT- (HP) treatment affects SPER of a-Si created at implantation. Specific
local ordering near the implanted metal atoms in Si:TM materials (TM = V, Cr or
Mn) can be critical with respect to the formation of ferromagnetic ordering [6].
Still, magnetic properties of the as-implanted as well as of processed Si:V, Si:Cr
and Si:Mn samples could be related in part to the so called quasi-ferromagnetism
reported for Si implanted with non-magnetic species, such as He+ or Si+, and
processed at relatively low temperatures [7].
This work reports new results concerning structural and related properties of Si:V
(implanted dose, DV+ ≤ 5·1015 cm–2) as well as of Si:V, Mn (DV+ = 5·1015 cm–2,
DMn+ = 1·1015 cm–2), processed at up to 1270 K under HP up to 1.1 GPa.
Experimental
Implantation of 51V+ to a dose DV+ ≤ 5·1015 cm–2 into single crystalline (c-Si)
Czochralski grown Cz–Si wafers with (001) orientation (to produce Si:V), some-
times followed by 55Mn+ implantation (to produce Si:V, Mn), was performed at
room temperature at energy EV+,Mn+ = 200 keV. The projected range of implanted
ions, Rp, was about 170 nm.
The Si:V and Si:V, Mn samples were processed for 1–5 h in Ar atmosphere at
up to 1270 K under 105 Pa or HP = 1.1 GPa.
The present results concern mostly Si:V prepared by V+ implantation with DV+ =
= 5·1015 cm–2 and Si:V, Mn prepared by V+ implantation with the same dose, then
followed by Mn+ implantation to a dose 1·1015 cm–2. If not otherwise stated, in
what follows just such samples are labelled as Si:V and Si:V, Mn.
The depth distribution of Mn was determined by Secondary Ions Mass Spec-
trometry (SIMS, Cameca 6F instrument). X-Ray Reciprocal Space Mapping
(XRRSM, MRD–PHILIPS diffractometer), Transmission Electron Microscopy
(TEM) and photoluminescence (PL, at 10 K, excitation with Ar laser, λ = 488 nm)
methods were applied to reveal structure of the samples. Magnetic properties of as
implanted Si:V were determined at 5 K using SQUID magnetometer.
Results and discussion
Heavy implantation of silicon with V+ produces strongly disordered area
near Rp. For the case of E = 200 keV and D = (1–2)·1015 cm–2, the total energy
introduced during implantation into Si is above the amorphization threshold.
So in the case of DV+ ≥ 1015 cm–2, amorphization of Si takes place near Rp
with a creation of buried amorphous a-Si layer. Subsequent Mn+ implantation
Физика и техника высоких давлений 2008, том 18, № 4
107
with DMn+ = 1·1015 cm–2 to produce Si:V, Mn, results in even more complete
amorphization.
Depth distributions of V and Mn in as-implanted Si:V, Mn are presented in Fig. 1.
Depth distribution of V in Si:V prepared by implantation with DV+ = 1·1014 cm–2
and DV+ = 1·1015 cm–2 is of the same character as that presented in Fig. 1.
After implantation, the a-Si layer, enriched in V/Mn up to about 1 at.%, has
been formed in Si:V and Si:V, Mn at about 170 nm depth below the surface (Fig. 1).
As seen in Fig. 2, magnetization observed for Si:V prepared by implantation
with DV+ in the 1·1012 cm–2–1·1015 cm–2 range, is dominated by the diamagne-
tism of the silicon substrate. The Si:V (DV+ = 1·1015 cm–2) sample, processed at
610 K, has been reported to order magnetically with magnetization slightly de-
creasing with temperature increase, from 5 to 50 K [4].
Fig. 1. SIMS depth profiles of Mn and V in as-implanted Si:V, Mn
Fig. 2. Magnetization M versus magnetic field for as-implanted Cz–Si:V (EV+ = 200
keV): –□– – Si:V5 (DV+ = 1012 cm–2), –○– – Si:V6 (1013), –△– – Si:V7 (1014), –▽– –
Si:V7 (1015). Measurements were made at 5 K
As revealed by TEM, the treatment of Si:V at 610 K results in a partial recov-
ery of the initial crystallographic perfection (Fig. 3). In effect of processing at HT
(HP), V and Mn atoms become to be distributed more uniformly through the a-Si
area, most probably because of enhanced, if compared to that in c-Si, diffusivity
of Mn and V atoms within a-Si.
At high temperatures, the a-Si layer is subjected to SPER, dependent on HT,
processing time and on HP [4]. In Si:V and Si:V, Mn this results in a movement
of the a–c interface toward the surface [8], detectable through either SIMS meas-
urements (Figs. 4, 5) or cross-sectional TEM (compare Fig. 3).
V atoms are excluded from the re-growth region, as the a-Si/c-Si interface
moves toward the surface, because the solubility of V in crystalline Si is very low
[9]. Through this process, a minimum in the V concentration profile was formed
in Si:V at about 300 nm below the surface (Fig. 4). The same phenomenon is also
Физика и техника высоких давлений 2008, том 18, № 4
108
Fig. 3. High-resolution TEM image of Si:V (DV+ = 5·1015 cm–2) processed for 1 h at 610 K
under 1.1 GPa. Width of re-growth region (left) equals to about 50 nm
Fig. 4. SIMS depth profiles of Mn and V in Si:V, Mn processed for 5 h at 1070 K under
1.1 GPa
observed for Mn atoms, which are concentrated at the same positions as vana-
dium. It is important to admit that, in the case of Si:Mn prepared by Mn+ implan-
tation at 160 keV, D = 1·1016 cm–2, with substrate temperature, TSi ≤ 340 K, and
processed for 1 h at 1070 K, most Mn atoms were shifted toward the Si surface
[3]. This means that, in Si:V, Mn, Mn atoms are gettered at defects produced at
SPER. This gettering is related to behavior of implanted vanadium.
As mentioned, excess vanadium is accumulated at the a-c interface, and the V
concentration reaches a point, at which excess V impurity cannot be pushed away.
At higher temperatures (HT ≥ 900 K), the a-Si layer is converted into the partially
polycrystalline state and VSi2 compound is formed [10]. Enthalpy of the VSi2
formation equals 3.2 eV, so this silicide remains stable even at 1270 K and so,
both in the case of Si:V and Si:V, Mn, it is located almost at the same depth, at
about 280 nm below the sample surface (Fig. 5).
Fig. 5. SIMS depth profile of V in Si:V
processed for 5 h at 1270 K under 1.1 GPa
Физика и техника высоких давлений 2008, том 18, № 4
109
The V concentration is peaking also at about 170 nm depth, near Rp (Figs. 4,
5), so within the maximal V concentration induced by implantation itself. This
even more pronounced peak seems to be also related to a formation of VSi2. The
similar Mn concentration peak observed in Si:V, Mn processed at 1070 K or 1270 K
at this depth can be related to a formation of Mn4Si7 [11].
Similarly as in the case of self-implanted silicon, Si:Si [12], processing of Si:V
or Si:V, Mn at 1270 K – 105 Pa/1.1 GPa does not result in a fully recovered crys-
tallographic perfection of the implantation-damaged areas. This has been stated
basing on PL (Fig. 6) and XRRSM (Fig. 7) results. Processing of Si:V, Mn under
HP results in an absence of the PL line at about 0.81 eV (Fig. 6,b), still clearly
detectable after processing under 105 Pa (Fig. 6,a). Usually this line is associated
with the presence of dislocations in single-crystalline Si.
а b
Fig. 6. PL spectra of Si:V, Mn processed for 5 h at 1270 K under 105 Pa (a) and 1.1 GPa (b)
а b
Fig. 7. XRRSMs of Si:V processed for 5 h at 1270 K under 105 Pa (a) and 1.1 GPa (b)
The favourable effect of HP at 1270 K on SPER is confirmed by X-ray map-
ping. The intensity of diffusively scattered X-rays decreased in the case of Si:V
Физика и техника высоких давлений 2008, том 18, № 4
110
processed at 1270 K under HP. The lattice parameters of c-Si, formed under 1.1
GPa by SPER of a-Si, were distinctly more uniform (compare Fig. 7,a,b).
After processing, the structure of Si:V and Si:V, Mn samples (these last with
DV+/DMn+ = 5), is dependent first of all on the dose of implanted V+ and on tem-
perature of processing. Enhanced pressure of Ar affects SPER and results in the
improved structure of re-crystallized a-Si, most probably due to the effect of HP
on diffusivity of implantation-induced point and related defects [12].
Local ordering near the implanted atoms in Si:TM materials (TM = V and/or
Mn) is critical for magnetic ordering. This ordering is also related to quasi-
ferromagnetism, detected in silicon implanted with non-magnetic atoms [7,9].
Conclusions
Our report presents the compositional and structural properties of single-crystal-
line silicon implanted with medium dosage of vanadium (vanadium + manganese)
ions and processed at up to 1270 K, also under enhanced pressure, up to 1.1 GPa.
Understanding the mechanisms of SPER under HP and so of magnetic ordering
in ion implanted Si-based materials, of the creation of specific crystalline mag-
netically ordered phases and of the origin of quasi-ferromagnetism demands fur-
ther research.
One can hope that new Si–V and Si–V, Mn materials belonging to the DMS
family will be developed.
The authors thank Dr. W.K. Chu and Dr. Z.H. Zhang from the Department of
Physics and Texas Centre for Superconductivity, University of Houston, Houston,
TX 12345 for their help in preparation of the samples.
1. H. Ono, Physica B376–377, 19 (2006).
2. O.D. Jayakumar, I.K. Gopalakrishnan, S.K. Kulshrestha, Physica B381, 194 (2006).
3. A. Misiuk, B. Surma, J. Bak-Misiuk, A. Barcz, W. Jung, W. Osinniy, A. Shalimov,
Mater. Sci. Semicond. Process. 9, 270 (2006).
4. A. Misiuk, L. Chow, A. Barcz, B. Surma, J. Bak-Misiuk, P. Romanowski, W. Osinniy,
F. Salman, G. Chai, M. Prujszczyk, A. Trojan, in: High Purity Silicon 9, C.L. Claeys,
R. Falster, M. Watanabe, P. Stallhofer (Eds.), ISBN 1-56677-504-3 (2006), p. 481–
489.
5. A. Misiuk, A. Barcz, L. Chow, B. Surma, J. Bak-Misiuk, M. Prujszczyk, Solid State
Phen. 131–133, 375 (2008).
6. A. Wolska, K. Lawniczak-Jablonska, M. Klepka, M.S. Walczak, A. Misiuk, Phys. Rev.
B75, 113201 (2007).
7. T. Dubroca, J. Hack, R.E. Hummel, A. Angerhofer, Appl. Phys. Lett. 88, 182504
(2006).
8. P. Zhang, F. Stevie, R. Vanfleet, R. Needlakantan, M. Klimov, D. Zhou, L. Chow,
J. Appl. Phys. 96, 1053 (2004).
9. L. Chow, J.C. Gonzales-Pons, E. del Barco, R. Vanfleet, A. Misiuk, A. Barcz, E.S.
Choi, G. Chai, in: Magnetic Materials, International Conference on Magnetic Materi-
Физика и техника высоких давлений 2008, том 18, № 4
111
als (ICMM-2007), A. Ghoshray, B. Bandyopadhyay (Eds.), American Institute of
Physics (2008), p. 248–251.
10. S.P. Murarka, Silicides for VLSI Applications, Academic Press, New York (1983).
11. J. Bak-Misiuk, E. Dynowska, P. Romanowski, A. Shalimov, A. Misiuk, S. Kret, P.
Dluzewski, J. Domagala, W. Caliebe, J. Dabrowski, M. Prujszczyk, Solid State Phen.
131–133, 327 (2008).
12. A. Misiuk, B. Surma, J. Bak-Misiuk, Solid State Phen. 108–109, 351 (2005).
|
| id | nasplib_isofts_kiev_ua-123456789-70463 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 0868-5924 |
| language | English |
| last_indexed | 2025-12-07T17:15:05Z |
| publishDate | 2008 |
| publisher | Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України |
| record_format | dspace |
| spelling | Misiuk, A. Barcz, A. Chow, L. Bak-Misiuk, J. Romanowski, P. Shalimov, A. Wnuk, A. Surma, B. Vanfleet, R. Prujszczyk, M. 2014-11-06T18:23:35Z 2014-11-06T18:23:35Z 2008 Pressure-induced structural transformations in Si:V and Si:V, Mn / A. Misiuk, A. Barcz, L. Chow, J. Bak-Misiuk, P. Romanowski, A. Shalimov, A. Wnuk, B. Surma, R. Vanfleet, M. Prujszczyk // Физика и техника высоких давлений. — 2008. — Т. 18, № 4. — С. 105-111. — Бібліогр.: 12 назв. — англ. 0868-5924 PACS: 61.72.Tt, 61.72.–y, 62.50.+p, 78.30.Am https://nasplib.isofts.kiev.ua/handle/123456789/70463 Semiconductors doped with magnetically active atoms are expected to find application in spintronics. Si samples implanted with Mn⁺ (Si:Mn) or with V⁺ (Si:V) can order magnetically after processing at high temperature (HT) and also under enhanced hydrostatic pressure (HP). This work presents new results on structure-related properties of single crystalline Si implanted at 200 keV with V⁺ as well as that co-implanted additionally with Mn⁺ ions (Si:V, Mn), with dosages DV⁺ ≤ 5·10¹⁵ cm⁻² and DMn⁺ = 1·10¹⁵ cm⁻². The samples were processed for 1–5 h at HT ≤ 1270 K under HP ≤ 1.1 GPa. Secondary Ion Mass Spectrometry, Transmission Electron Microscopy, X-ray and related methods were applied for sample characterization. The HT- (HP) treatment affects, among others, solid phase epitaxial re-growth (SPER) of amorphous silicon created at implantation and distribution of implanted species. The authors thank Dr. W.K. Chu and Dr. Z.H. Zhang from the Department of Physics and Texas Centre for Superconductivity, University of Houston, Houston, TX 12345 for their help in preparation of the samples. en Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України Физика и техника высоких давлений Pressure-induced structural transformations in Si:V and Si:V, Mn Article published earlier |
| spellingShingle | Pressure-induced structural transformations in Si:V and Si:V, Mn Misiuk, A. Barcz, A. Chow, L. Bak-Misiuk, J. Romanowski, P. Shalimov, A. Wnuk, A. Surma, B. Vanfleet, R. Prujszczyk, M. |
| title | Pressure-induced structural transformations in Si:V and Si:V, Mn |
| title_full | Pressure-induced structural transformations in Si:V and Si:V, Mn |
| title_fullStr | Pressure-induced structural transformations in Si:V and Si:V, Mn |
| title_full_unstemmed | Pressure-induced structural transformations in Si:V and Si:V, Mn |
| title_short | Pressure-induced structural transformations in Si:V and Si:V, Mn |
| title_sort | pressure-induced structural transformations in si:v and si:v, mn |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/70463 |
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