Pressure-induced structural transformations in Si:V and Si:V, Mn

• Published in: Физика и техника высоких давлений
• Date: 2008
• Main Authors: Misiuk, A., Barcz, A., Chow, L., Bak-Misiuk, J., Romanowski, P., Shalimov, A., Wnuk, A., Surma, B., Vanfleet, R., Prujszczyk, M.
• Format: Article
• Language: English
• Published: Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України 2008
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/70463
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Pressure-induced structural transformations in Si:V and Si:V, Mn / A. Misiuk, A. Barcz, L. Chow, J. Bak-Misiuk, P. Romanowski, A. Shalimov, A. Wnuk, B. Surma, R. Vanfleet, M. Prujszczyk // Физика и техника высоких давлений. — 2008. — Т. 18, № 4. — С. 105-111. — Бібліогр.: 12 назв. — англ.

Semiconductors doped with magnetically active atoms are expected to find application in spintronics. Si samples implanted with Mn⁺ (Si:Mn) or with V⁺ (Si:V) can order magnetically after processing at high temperature (HT) and also under enhanced hydrostatic pressure (HP). This work presents new resu...