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Diffusion Processes in Ti–Si Systems during Silicide Formation

Two methods of creation of the TiSi₂(C54) stable phase are reviewed, and their comparison is considered. The formation of the structure of TiSi₂(C54) nanosize films on monocrystalline Si is studied. As shown, the TiSi₂(C54) formation is carried out faster (≅ 55 s) by low-energy thermion deposition (...

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Veröffentlicht in:	Наносистеми, наноматеріали, нанотехнології
Datum:	2013
Hauptverfasser:	Bogdanov, S.E., Beddies, G., Daniel, M., Makogon, Yu.N.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут металофізики ім. Г.В. Курдюмова НАН України 2013
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/75923
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Diffusion Processes in Ti–Si Systems during Silicide Formation / S. E. Bogdanov, G. Beddies, M.Daniel, Yu.N. Makogon // Наносистеми, наноматеріали, нанотехнології: Зб. наук. пр. — К.: РВВ ІМФ, 2013. — Т. 11, № 2. — С. 295-302. — Бібліогр.: 7 назв. — анг.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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