Affects deposition time and substrate temperature on optical properties of ZnO thin film
ZnO thin films have been prepared with different processes such as pulsed-laser deposition, chemical vapor deposition spray pyrolysis and sol-gel process etc. Among them, chemical vapor deposition (CVD), in this paper we will study the effect of, deposition time and temperature of the substrates. Th...
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| Cite this: | Affects deposition time and substrate temperature on optical properties of zno thin film / A.D. Pogrebnyak, N.Y. Jameel, G.A-K.M. Mommed // Физическая инженерия поверхности. — 2011. — Т. 9, № 1. — С. 21-24. — Бібліогр.: 6 назв. — англ. |
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| author | Pogrebnyak, A.D. Jameel, N.Y. Mommed, G.A-K.M. |
| author_facet | Pogrebnyak, A.D. Jameel, N.Y. Mommed, G.A-K.M. |
| citation_txt | Affects deposition time and substrate temperature on optical properties of zno thin film / A.D. Pogrebnyak, N.Y. Jameel, G.A-K.M. Mommed // Физическая инженерия поверхности. — 2011. — Т. 9, № 1. — С. 21-24. — Бібліогр.: 6 назв. — англ. |
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| description | ZnO thin films have been prepared with different processes such as pulsed-laser deposition, chemical vapor deposition spray pyrolysis and sol-gel process etc. Among them, chemical vapor deposition (CVD), in this paper we will study the effect of, deposition time and temperature of the substrates. The temperatures of substrate was varied as was the deposition time of ZnO in order to determine the best substrate temperature and deposition time to produce the best physical properties of deposition.
using pure zinc acetate hydrous Zn(Ch₃COO)₂⋅2H₂0 with 98% purity. The best deposition time was found to be (20 min) while the best temperature degree was (500 °C).
ZnO тонких плівок були підготовлені з різними процесами, такими як імпульсного лазерного осадження, хімічного осадження парів ПІРОЛІЗ і золь-гель процесу і т.д. Серед них, хімічне осадження парів (CVD), в цій статті ми будемо вивчати вплив, час осадження і температури підкладки. Температура підкладки варіювалася як було часу осадження з ZnO з метою визначення кращих температур підкладки та осадження час, щоб зробити найкращі фізичні властивості осадження, з використанням чистого цинку ацетат водний Zn(Ch₃COO)₂⋅2H₂ з 98% чистоти. Кращий час осадження виявиться (20 хв), а найкраща температура мірою була (500 °С).
ZnO тонких пленок были подготовлены с различными процессами, такими как импульсного лазерного осаждения, химического осаждения паров ПИРОЛИЗОМ и золь-гель процесса и т.д. Среди них, химическое осаждение паров (CVD), в этой статье мы будем изучать влияние, время осаждения и температуры подложки. Температура подложки варьировалась как было времени осаждения из ZnO с целью определения лучших температуры подложки и осаждения время, чтобы произвести самые лучшие физические свойства осаждения. с использованием
чистого цинка ацетат водный Zn(Ch₃COO)₂⋅2H₂ с 98% чистоты. Лучшее время осаждения оказалось (20 мин), а лучшая температура степени была (500 °С).
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| first_indexed | 2025-12-07T18:30:55Z |
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21
INTRODUCTION
Zinc oxide (ZnO) films have been investigated
in recent years as transparent conducting oxide
(TCO) because of their good electrical and op-
tical properties in combination with large band
gap, abundance in nature, and absence of toxicity
[1]. This material is an II – VI compound semi-
conductor with a wide variety of applications as
electrodes, window materials in display, solar
cells, and various optoelectronic devices [2 – 5].
Besides, ZnO have attracted intense attention in
the searching for high temperature de Curie (Tc)
ferromagnetic diluted magnetic semiconductors
(DMS) materials since Dietl et. al.
ZnO films can be deposited by a variety of
techniques such as:
– Chemical Vapor Deposition (CVD) [3];
– Molecular Beam Epitaxy (MBE) [4];
– Pulsed Laser Deposition (PLD) [1];
– Spray Pyrolysis Deposition (SPD) [4 – 6];
– Magnetron Sputtering (MS) [3 – 4].
Some of the most important factors that affect
the properties of the films prepared using
chemical vapor deposition (CVD) techniques are
as follows:
– Location of the sample;
– Deposition time;
– Temperature of the substrates;
UCD 621.715.539.376
AFFECTS DEPOSITION TIME AND SUBSTRATE TEMPERATURE ON
OPTICAL PROPERTIES OF ZnO THIN FILM
A.D. Pogrebnyak1, N.Y. Jameel2, G.A-K.M. Mommed1
1Sumy State University
Ukraine
2University of Mosul, Mosul, Set Culture
Iraq
Received 25.03.2011
ZnO thin films have been prepared with different processes such as pulsed-laser deposition, chemical
vapor deposition spray pyrolysis and sol-gel process etc. Among them, chemical vapor deposition
(CVD), in this paper we will study the effect of, deposition time and temperature of the substrates.
The temperatures of substrate was varied as was the deposition time of ZnO in order to determine the
best substrate temperature and deposition time to produce the best physical properties of deposition.
using pure zinc acetate hydrous Zn(Ch3COO)2⋅2H20 with 98% purity. The best deposition time was
found to be (20 min) while the best temperature degree was (500 °C).
Keywords: thin film, chemical vaporous deposition, ZnO, pulsed-laser deposition.
ZnO тонких плівок були підготовлені з різними процесами, такими як імпульсного лазерного
осадження, хімічного осадження парів ПІРОЛІЗ і золь-гель процесу і т.д. Серед них, хімічне
осадження парів (CVD), в цій статті ми будемо вивчати вплив, час осадження і температури
підкладки. Температура підкладки варіювалася як було часу осадження з ZnO з метою визна-
чення кращих температур підкладки та осадження час, щоб зробити найкращі фізичні власти-
вості осадження, з використанням чистого цинку ацетат водний Zn(CH3COO)2⋅2Н2 з 98% чис-
тоти. Кращий час осадження виявиться (20 хв), а найкраща температура мірою була (500 °С).
Ключові слова: тонкі плівки, хімічні пароподібні осадження, ZnO, імпульсно-лазерне напи-
лення.
ZnO тонких пленок были подготовлены с различными процессами, такими как импульсного
лазерного осаждения, химического осаждения паров ПИРОЛИЗОМ и золь-гель процесса и
т.д. Среди них, химическое осаждение паров (CVD), в этой статье мы будем изучать влияние,
время осаждения и температуры подложки. Температура подложки варьировалась как было
времени осаждения из ZnO с целью определения лучших температуры подложки и осаждения
время, чтобы произвести самые лучшие физические свойства осаждения. с использованием
чистого цинка ацетат водный Zn(CH3COO)2⋅2Н2 с 98% чистоты. Лучшее время осаждения
оказалось (20 мин), а лучшая температура степени была
(500 °С).
Ключевые слова: тонкие пленки, химические парообразные осаждения, ZnO, импульсно-ла-
зерное напыления.
Pogrebnyak A.D., Jameel N.Y., Mommed G.A-K.M., 2011
ФІП ФИП PSE, 2011, т. 9, № 1, vol. 9, No. 122
– Rate of gas flow.
Thin deposited ZnO films on glass or silicon
substrates were prepared in groups each in dif-
ferent deposition conditions .The procedure was
to fix three of the four factors and changing one
in order to investigate the effect of this factor on
the physical properties of the produced films, in
this paper we will study the effect of, deposition
time and temperature of the substrates.
The temperatures of substrate was varied as
was the deposition time of ZnO in order to deter-
mine the best substrate temperature and deposi-
tion time to produce the best physical properties
of deposition. The best deposition time was
found to be (20 min) while the best temperature
degree was (500 °C).
EXPERIMENTAL PROCEDURE
In order to prepare pure ZnO films using che-
mical vapor deposition (CVD) techniques on
glass substrates the deposition material used was
pure zinc acetate hydrous Zn(Ch3COO)2⋅2H20
with 98% purity. After preparing the substrates,
they were placed and adjusted in the deposition
unit while the temperature degrees were varied
between (400 – 500 °C) in order to ensure opti-
mum film properties. The pressurized air flow
was also adjusted to the best flow rate which was
found to be 2 L/min to produce the best samples
as the rate of airflow is related to the uniformity
of the deposited film and it must be adjusted to
prevent the formation of colored strips on the
glass substrates that can interfere with visional
and microscopic inspection. We choose deferent
time for doping ZnO (20, 25, 30 min) to study
the effect of deposition time and substrate tem-
perature for the optical properties.
Various temperature degrees were tested when
heating the deposition material and it was found
that the temperature of (340 – 360 °C) is the ap-
propriate temperature degree to vapor zinc ace-
tate and then to produces the best results of zinc
oxide deposition and then, samples were left af-
terwards to cool.
The following equations show, how ZnO is
produced.
Zn(Ch3COO) 2⋅2H2O → ZnO+CO2+CH3+
+ Steam. (1)
The thickness of the films is an important con-
sideration in manufacturing any type of devices
because of its effect of the properties of the films.
The study relayed on the weight as a measure-
ment method by using a sensitive electrical ba-
lance with a sensitivity of 10–4 gm. The sample
is weighed before and after the deposition pro-
cess and the thickness of the film is determined
from the difference between the two weights and
the density of the material through the formula:
T = (m 2 – m1)/A⋅ρ, (2)
T – the average thickness of the film, m2 – m1 –
the weight of samples before and after the de-
position process respectively; A the surface are
of the sample, ρ – the density of the film material.
The transmission spectra and absorbance spectra
were measured for all pure ZnO films in various
deposition conditions as a function of wavelength
within the (320 – 1000 nm) range using UV-vi-
sible range spectrophotometer mode Ce 1021 at
room temperature. The optical parameters of
ZnO films included the investigated effect of
deposition temperature on the transmission
spectra and absorbance spectra with the UV-vi-
sible region. Calculating absorption coefficient
and the effect of deposition temperature on this
coefficient. The photon energy was calculated
as a function of the wavelength from the equation
hv(ev) = 1.24/λ. (3)
The optical energy gap was calculated from
the intersect of (αhy) 2 with the photon energy
axis (hy).
RESULTS AND DISCUSSION
The process of deposition and producing homo-
geneous films is not a simple process but requires
a number of tests including the selection of the
precursor material, the temperature of substrates,
the evaporation temperature and the flow rate of
the carrier gasses in addition to the location of
the sample in the deposition chamber. All these
factors have a direct effect on the type of the re-
quired prepared film that and on its physical pro-
perties.
In this study we observed a number of obser-
vations concerning the films. In some instance
the films did not grow over the substrates or they
only partly covered them. In other instances we
observed that the films were formed as stripes.
These cases took place at temperatures less than
400 °C. While at this temperature and above, we
found that the films status was enhanced signi-
FFECTS DEPOSITION TIME AND SUBSTRATE TEMPERATURE ON OPTICAL PROPERTIES OF ZnO THIN FILM
23
ficantly concerning the rate of growth and homo-
geneity while the optimal temperature degree in
this study was found to be 500 °C to obtain the
best optical, and electrical properties. In order
to determine the effect of deposition time on the
optical and electrical properties of ZnO films
deposited on glass substrates, the transmission
was measured as a function of the wavelength
and the absorption coefficient was determined
as a function of the photon energy, absorption
edge, and the optical energy gap.
Fig. 1 shows the transmission spectrum as a
function of the wavelength for ZnO samples de-
posited at various deposition times (20, 25, and
30 minutes) and it is evident from the figure that
the films are not transmission for wavelength that
are within the UV region and transmission starts
at the visual spectrum and ranging between (70
– 80%) with this spectrum and reaches a maxi-
mum transmission in the wavelengths at the end
of the visible range and near to the IR region.
From the fig. 1 we can see that the transmis-
sion in general decreases with the increase in the
deposition time as the transmission depends on
the thickness of the deposited film as shown on
the following formula.
T = 1/eαd, (4)
α – the absorption coefficient and d – the thic-
kness of the film.
The thickness of the film is directly related to
the deposition time as we have previously stated
and this conforms to the researches and through
calculating the absorption coefficient as a func-
tion of the energy of the incident photon.
From fig. 2 the absorption edge that ranges
between (3.1 – 3.24) eV was found for the depo-
sitions times ranging between (20 – 30) min res-
pectively. We see that the absorption edge shifts
towards the lower energies with the increase in
deposition because of the increase in the charge
carriers with the increase in the deposition time
and thickness. The figure also shows that the ab-
sorption coefficient decreases with the increase
in the deposition time as the absorption edge and
as:
A = log1/T = 2.303ln1/T = 2.303ln(eαd), (5)
A = 2.303αd, (6)
α = A/2.303d, (7)
This supports the practical results that is obtained
besides.
Fig. 3 shows the relationship between (αhy)2
and the photon energy, the incident photon on
ZnO films from which the optical energy gap
(Eopt) for these films deposited at various depo-
sition times are obtained. Eopt is determined form
the intersection of the straight lines of the curve
with the energy axis at photon energy and in our
case Eopt was found to be 3.2 eV. The effect of
substrate temperature on the crystal structure of
ZnO films deposited on glass substrates was in-
vestigated using samples deposited at different
substrate temperatures ( 400, 450, and 500 °C )
Fig. 1. Show the transmittance spectra as a function of
the wavelength for ZnO samples deposited at various de-
position times (20, 25, and 30 mins).
Fig. 2. Optical absorption coefficient (α) of ZnO samples
deposited at various deposition times (20, 25, and 30
mins).
Fig. 3. Measurement of energy band gap for ZnO samples
deposited at various deposition times (20, 25, and 30
mins).
A.D. POGREBNYAK, N.Y. JAMEEL, G.A-K.M. MOMMED
ФІП ФИП PSE, 2011, т. 9, № 1, vol. 9, No. 1
ФІП ФИП PSE, 2011, т. 9, № 1, vol. 9, No. 124
were tested while the deposition time and flow
rate were kept at ( 20 min) and (2 L/m) respecti-
vely as follows.
Fig. 4 illustrate the spectrum of transmittance
as a function of wave length, the decrease of wa-
ve length, as its value very high at the wave
length which is located with in optical spectrum
and infra – red radiation, which indicates that
these films have large energy gap to allow most
of the visible light to pass as shown in fig. 3, the
transmittance value increases by increasing sub-
strate heat degree, which leads to improve the
crystal structure.
Fig. 5 elucidates the relation between the ab-
sorption coefficient and the energy of the incident
photon for ZnO films and shows that the ab-
sorption coefficient slightly increases with the
temperature of substrates and also with the in-
crease in the energy of the incident photon within
the low energy range. The absorption coefficient
largely increases as it approaches the absorption
edge.
Fig. 6 elucidates the relation between (αhy)2
and the energy of the incident photon for ZnO as
it shows optical energy gap increase with increa-
sing substrate temperature for these films, Eopt is
determined from the intersection of the straight
lines of the curve with the energy axis at (hv),and
Eopt was found to be (3.2 – 3.3) eV.
CONCLUSION
1. The transmission in general decreases with
the increase deposition time.
2. The absorption coefficient decreases with the
increase deposition time.
3. The transmission in general increases with
the increase in deposition temperature.
4. Optical energy gap increase with increasing
substrate temperature.
5. The best deposition time was found to be (20
min) while the best temperature degree was
500 °C.
REFERENCES
1. Crawn H.E. Zinc oxide nanostmctures: synthe-
sis and properties//Thin Solid Films.– 1957. –
P. 126.17; Willardson R.K., Beer A.C. Semi-
conductors and semimetals//Academic press
New York (USA). – 1975. – Vol. 10.
2. Abdul Hamid H.B. Fabrication Structural and
Electrical Characteristics of Sams Malaysia.–
2009.
3. Efimenko K., Rybak V., Hnatowicz V. ZnO thin
film as methane sensor//Appl. Phys. – 1999. –
68. – P. 479.
4. Norton D.P., Heo Y.W., Ivill M.P., Pearton K.
Ip,S.J., Chisholm M.F., Steiner T.//Materials-
today. – 2004. – P. 34-40.
5. Kim H.Y., Kim J.H., Kim Y.J., Chae K.H.,
Whang C.N., Song J.H., Im S.//Optical mate-
rials. – 2001. – Vol. 17. – P. 141-144.
6. Dietl T., Ohno H., Matsukara F.//Phys Rev. B.
– 2001. – Vol. 63. – P. 195205-1/21.
Fig. 4. Show the transmittance spectra as a function of
the wavelength for ZnO samples deposited at various tem-
peratures (400, 450, 500 °C).
Fig. 5. optical absorption coefficient (α)) of ZnO samples
deposited at various temperature (400, 450, 500 °C).
Fig. 6. Measurement of energy band gap for ZnO samples
deposited at various temperature (400 , 450, 500 °C).
FFECTS DEPOSITION TIME AND SUBSTRATE TEMPERATURE ON OPTICAL PROPERTIES OF ZnO THIN FILM
|
| id | nasplib_isofts_kiev_ua-123456789-75998 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1999-8074 |
| language | English |
| last_indexed | 2025-12-07T18:30:55Z |
| publishDate | 2011 |
| publisher | Науковий фізико-технологічний центр МОН та НАН України |
| record_format | dspace |
| spelling | Pogrebnyak, A.D. Jameel, N.Y. Mommed, G.A-K.M. 2015-02-07T07:10:20Z 2015-02-07T07:10:20Z 2011 Affects deposition time and substrate temperature on optical properties of zno thin film / A.D. Pogrebnyak, N.Y. Jameel, G.A-K.M. Mommed // Физическая инженерия поверхности. — 2011. — Т. 9, № 1. — С. 21-24. — Бібліогр.: 6 назв. — англ. 1999-8074 https://nasplib.isofts.kiev.ua/handle/123456789/75998 621.715.539.376 ZnO thin films have been prepared with different processes such as pulsed-laser deposition, chemical vapor deposition spray pyrolysis and sol-gel process etc. Among them, chemical vapor deposition (CVD), in this paper we will study the effect of, deposition time and temperature of the substrates. The temperatures of substrate was varied as was the deposition time of ZnO in order to determine the best substrate temperature and deposition time to produce the best physical properties of deposition.
 using pure zinc acetate hydrous Zn(Ch₃COO)₂⋅2H₂0 with 98% purity. The best deposition time was found to be (20 min) while the best temperature degree was (500 °C). ZnO тонких плівок були підготовлені з різними процесами, такими як імпульсного лазерного осадження, хімічного осадження парів ПІРОЛІЗ і золь-гель процесу і т.д. Серед них, хімічне осадження парів (CVD), в цій статті ми будемо вивчати вплив, час осадження і температури підкладки. Температура підкладки варіювалася як було часу осадження з ZnO з метою визначення кращих температур підкладки та осадження час, щоб зробити найкращі фізичні властивості осадження, з використанням чистого цинку ацетат водний Zn(Ch₃COO)₂⋅2H₂ з 98% чистоти. Кращий час осадження виявиться (20 хв), а найкраща температура мірою була (500 °С). ZnO тонких пленок были подготовлены с различными процессами, такими как импульсного лазерного осаждения, химического осаждения паров ПИРОЛИЗОМ и золь-гель процесса и т.д. Среди них, химическое осаждение паров (CVD), в этой статье мы будем изучать влияние, время осаждения и температуры подложки. Температура подложки варьировалась как было времени осаждения из ZnO с целью определения лучших температуры подложки и осаждения время, чтобы произвести самые лучшие физические свойства осаждения. с использованием
 чистого цинка ацетат водный Zn(Ch₃COO)₂⋅2H₂ с 98% чистоты. Лучшее время осаждения оказалось (20 мин), а лучшая температура степени была (500 °С). en Науковий фізико-технологічний центр МОН та НАН України Физическая инженерия поверхности Affects deposition time and substrate temperature on optical properties of ZnO thin film Article published earlier |
| spellingShingle | Affects deposition time and substrate temperature on optical properties of ZnO thin film Pogrebnyak, A.D. Jameel, N.Y. Mommed, G.A-K.M. |
| title | Affects deposition time and substrate temperature on optical properties of ZnO thin film |
| title_full | Affects deposition time and substrate temperature on optical properties of ZnO thin film |
| title_fullStr | Affects deposition time and substrate temperature on optical properties of ZnO thin film |
| title_full_unstemmed | Affects deposition time and substrate temperature on optical properties of ZnO thin film |
| title_short | Affects deposition time and substrate temperature on optical properties of ZnO thin film |
| title_sort | affects deposition time and substrate temperature on optical properties of zno thin film |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/75998 |
| work_keys_str_mv | AT pogrebnyakad affectsdepositiontimeandsubstratetemperatureonopticalpropertiesofznothinfilm AT jameelny affectsdepositiontimeandsubstratetemperatureonopticalpropertiesofznothinfilm AT mommedgakm affectsdepositiontimeandsubstratetemperatureonopticalpropertiesofznothinfilm |