Computer simulation of transient layer chemical composition in Cr-N films obtained by ion beam assisted deposition

• Published in: Вопросы атомной науки и техники
• Date: 2001
• Main Authors: Marchenko, I.G., Guglya, A.G.
• Format: Article
• Language: English
• Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2001
• Subjects: Физика радиационных и ионно-плазменных технологий
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/78305
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Computer simulation of transient layer chemical composition in Cr-N films obtained by ion beam assisted deposition / I.G. Marchenko, A.G. Guglya // Вопросы атомной науки и техники. — 2001. — № 4. — С. 137-139. — Бібліогр.: 4 назв. — англ.

The computer simulation of Cr-N film deposition by IBAD method was carried out. The implanted nitrogen content in the growing film is calculated, values of the radiation defect formation in the film are obtained. The variation of the implanted nitrogen relationship to the defect distribution in the...