Linear polarization of photons produced by the electrons moving along the crystallographic plane in a silicon crystal

We present the results of the polarization and intensity measurements versus photon energy Eg=5-35 MeV for the photon beam produced by the electrons with the energies 1.2 and 1.5 GeV moving in the silicon crystal 500 and 290 mm thick along the (110) plane. The comparison with results of another rese...

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Бібліографічні деталі
Опубліковано в: :Вопросы атомной науки и техники
Дата:2001
Автори: Denyak, V.V., Khvastunov, V.M., Likhachev, V.P., Paschuk, S.A., Schelin, H.R.
Формат: Стаття
Мова:English
Опубліковано: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2001
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Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/78448
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Linear polarization of photons produced by the electrons moving along the crystallographic plane in a silicon crystal / V.V. Denyak, V.M. Khvastunov, V.P. Likhachev, S.A. Paschuk, H.R. Schelin // Вопросы атомной науки и техники. — 2001. — № 1. — С. 60-62. — Бібліогр.: 8 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-78448
record_format dspace
spelling Denyak, V.V.
Khvastunov, V.M.
Likhachev, V.P.
Paschuk, S.A.
Schelin, H.R.
2015-03-17T12:12:09Z
2015-03-17T12:12:09Z
2001
Linear polarization of photons produced by the electrons moving along the crystallographic plane in a silicon crystal / V.V. Denyak, V.M. Khvastunov, V.P. Likhachev, S.A. Paschuk, H.R. Schelin // Вопросы атомной науки и техники. — 2001. — № 1. — С. 60-62. — Бібліогр.: 8 назв. — англ.
1562-6016
PACS: 29.27.Fh, 29.27.Hj, 41.60.-m, 07.85.Fv.
https://nasplib.isofts.kiev.ua/handle/123456789/78448
We present the results of the polarization and intensity measurements versus photon energy Eg=5-35 MeV for the photon beam produced by the electrons with the energies 1.2 and 1.5 GeV moving in the silicon crystal 500 and 290 mm thick along the (110) plane. The comparison with results of another research group and theoretical calculation indicates the qualitative agreement. The correlation in the shape of the radiation intensity spectrum and its polarization energy dependence is observed.
The authors are very thankful to Kasilov V.I., Sanin V.M, and Shcherbak S.F. for their significant help in photon beam production.
en
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
Вопросы атомной науки и техники
Nuclear reactions
Linear polarization of photons produced by the electrons moving along the crystallographic plane in a silicon crystal
Линейная поляризация фотонов, полученных при движении электронов вдоль кристаллографической плоскости в кристалле кремния
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Linear polarization of photons produced by the electrons moving along the crystallographic plane in a silicon crystal
spellingShingle Linear polarization of photons produced by the electrons moving along the crystallographic plane in a silicon crystal
Denyak, V.V.
Khvastunov, V.M.
Likhachev, V.P.
Paschuk, S.A.
Schelin, H.R.
Nuclear reactions
title_short Linear polarization of photons produced by the electrons moving along the crystallographic plane in a silicon crystal
title_full Linear polarization of photons produced by the electrons moving along the crystallographic plane in a silicon crystal
title_fullStr Linear polarization of photons produced by the electrons moving along the crystallographic plane in a silicon crystal
title_full_unstemmed Linear polarization of photons produced by the electrons moving along the crystallographic plane in a silicon crystal
title_sort linear polarization of photons produced by the electrons moving along the crystallographic plane in a silicon crystal
author Denyak, V.V.
Khvastunov, V.M.
Likhachev, V.P.
Paschuk, S.A.
Schelin, H.R.
author_facet Denyak, V.V.
Khvastunov, V.M.
Likhachev, V.P.
Paschuk, S.A.
Schelin, H.R.
topic Nuclear reactions
topic_facet Nuclear reactions
publishDate 2001
language English
container_title Вопросы атомной науки и техники
publisher Національний науковий центр «Харківський фізико-технічний інститут» НАН України
format Article
title_alt Линейная поляризация фотонов, полученных при движении электронов вдоль кристаллографической плоскости в кристалле кремния
description We present the results of the polarization and intensity measurements versus photon energy Eg=5-35 MeV for the photon beam produced by the electrons with the energies 1.2 and 1.5 GeV moving in the silicon crystal 500 and 290 mm thick along the (110) plane. The comparison with results of another research group and theoretical calculation indicates the qualitative agreement. The correlation in the shape of the radiation intensity spectrum and its polarization energy dependence is observed.
issn 1562-6016
url https://nasplib.isofts.kiev.ua/handle/123456789/78448
citation_txt Linear polarization of photons produced by the electrons moving along the crystallographic plane in a silicon crystal / V.V. Denyak, V.M. Khvastunov, V.P. Likhachev, S.A. Paschuk, H.R. Schelin // Вопросы атомной науки и техники. — 2001. — № 1. — С. 60-62. — Бібліогр.: 8 назв. — англ.
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