Electric barrier formation in kind of connected dip and hump of electric potential near ECR point

The self-consistent formation, observed in experiments, of the solitary barrier for plasma electrons and ions has been analytically described.

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Published in:Вопросы атомной науки и техники
Date:2002
Main Authors: Barchuk, S.V., Lapshin, V.I., Maslov, V.I., Onishchenko, I.N., Tretyakov, V.N.
Format: Article
Language:English
Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2002
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Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/78923
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Electric barrier formation in kind of connected dip and hump of electric potential near ECR point / S.V. Barchuk, V.I. Lapshin, V.I. Maslov, I.N. Onishchenko, V.N. Tretyakov // Вопросы атомной науки и техники. — 2002. — № 5. — С. 98-100. — Бібліогр.: 1 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-78923
record_format dspace
spelling Barchuk, S.V.
Lapshin, V.I.
Maslov, V.I.
Onishchenko, I.N.
Tretyakov, V.N.
2015-03-23T09:35:31Z
2015-03-23T09:35:31Z
2002
Electric barrier formation in kind of connected dip and hump of electric potential near ECR point / S.V. Barchuk, V.I. Lapshin, V.I. Maslov, I.N. Onishchenko, V.N. Tretyakov // Вопросы атомной науки и техники. — 2002. — № 5. — С. 98-100. — Бібліогр.: 1 назв. — англ.
1562-6016
PACS: 52.25.-b
https://nasplib.isofts.kiev.ua/handle/123456789/78923
The self-consistent formation, observed in experiments, of the solitary barrier for plasma electrons and ions has been analytically described.
en
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
Вопросы атомной науки и техники
Plasma electronics
Electric barrier formation in kind of connected dip and hump of electric potential near ECR point
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Electric barrier formation in kind of connected dip and hump of electric potential near ECR point
spellingShingle Electric barrier formation in kind of connected dip and hump of electric potential near ECR point
Barchuk, S.V.
Lapshin, V.I.
Maslov, V.I.
Onishchenko, I.N.
Tretyakov, V.N.
Plasma electronics
title_short Electric barrier formation in kind of connected dip and hump of electric potential near ECR point
title_full Electric barrier formation in kind of connected dip and hump of electric potential near ECR point
title_fullStr Electric barrier formation in kind of connected dip and hump of electric potential near ECR point
title_full_unstemmed Electric barrier formation in kind of connected dip and hump of electric potential near ECR point
title_sort electric barrier formation in kind of connected dip and hump of electric potential near ecr point
author Barchuk, S.V.
Lapshin, V.I.
Maslov, V.I.
Onishchenko, I.N.
Tretyakov, V.N.
author_facet Barchuk, S.V.
Lapshin, V.I.
Maslov, V.I.
Onishchenko, I.N.
Tretyakov, V.N.
topic Plasma electronics
topic_facet Plasma electronics
publishDate 2002
language English
container_title Вопросы атомной науки и техники
publisher Національний науковий центр «Харківський фізико-технічний інститут» НАН України
format Article
description The self-consistent formation, observed in experiments, of the solitary barrier for plasma electrons and ions has been analytically described.
issn 1562-6016
url https://nasplib.isofts.kiev.ua/handle/123456789/78923
citation_txt Electric barrier formation in kind of connected dip and hump of electric potential near ECR point / S.V. Barchuk, V.I. Lapshin, V.I. Maslov, I.N. Onishchenko, V.N. Tretyakov // Вопросы атомной науки и техники. — 2002. — № 5. — С. 98-100. — Бібліогр.: 1 назв. — англ.
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first_indexed 2025-11-30T11:27:26Z
last_indexed 2025-11-30T11:27:26Z
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