Electric barrier formation in kind of connected dip and hump of electric potential near ECR point

• Published in: Вопросы атомной науки и техники
• Date: 2002
• Main Authors: Barchuk, S.V., Lapshin, V.I., Maslov, V.I., Onishchenko, I.N., Tretyakov, V.N.
• Format: Article
• Language: English
• Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2002
• Subjects: Plasma electronics
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/78923
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Electric barrier formation in kind of connected dip and hump of electric potential near ECR point / S.V. Barchuk, V.I. Lapshin, V.I. Maslov, I.N. Onishchenko, V.N. Tretyakov // Вопросы атомной науки и техники. — 2002. — № 5. — С. 98-100. — Бібліогр.: 1 назв. — англ.

The self-consistent formation, observed in experiments, of the solitary barrier for plasma electrons and ions has been analytically described.