On proportionality of the light output of semiconductor scintillators under irradiation by alpha-particles and heavy ions
In the energy range E =2.8...42.2 MeV, the light output S was measured for ZnSe-based scintillators under irradiation with α- particles and heavy ions 81Br. Under such irradiation, the proportionality S(Еα,i) is observed up to energies Еα≤7 MeV. Substantial deviation from linearity in the region o...
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України
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| Zitieren: | On proportionality of the light output of semiconductor scintillators under irradiation by alpha-particles and heavy ions / V. Ryzhikova, W. Klamrab, N. Starzhinskiya, L. Gal’chinetskiia, V. Silina, L. Lisetskia, E. Danshina, M. Balcerzykc, M. Moszy ńskic, M. Kapustac, M. Szawlowskid, K. Katrunova, V. Chernikova, V. Tarasov // Вопросы атомной науки и техники. — 2004. — № 1. — С. 156-158. — Бібліогр.: 7 назв. — англ. |
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Ryzhikov, V. Klamra, W. Starzhinskiy, N. Gal’chinetskii, L. Silin, V. Lisetski, L. Danshin, E. Kapusta, M. Szawlowski, M. Katrunov, K. Chernikov, V. Tarasov, V. Balcerzyk, M. Moszyński, M. 2015-03-24T15:03:28Z 2015-03-24T15:03:28Z 2004 On proportionality of the light output of semiconductor scintillators under irradiation by alpha-particles and heavy ions / V. Ryzhikova, W. Klamrab, N. Starzhinskiya, L. Gal’chinetskiia, V. Silina, L. Lisetskia, E. Danshina, M. Balcerzykc, M. Moszy ńskic, M. Kapustac, M. Szawlowskid, K. Katrunova, V. Chernikova, V. Tarasov // Вопросы атомной науки и техники. — 2004. — № 1. — С. 156-158. — Бібліогр.: 7 назв. — англ. 1562-6016 PACS: 29.27.Fa https://nasplib.isofts.kiev.ua/handle/123456789/78968 In the energy range E =2.8...42.2 MeV, the light output S was measured for ZnSe-based scintillators under irradiation with α- particles and heavy ions 81Br. Under such irradiation, the proportionality S(Еα,i) is observed up to energies Еα≤7 MeV. Substantial deviation from linearity in the region of higher energies is explained by different contribution to S from both primary and δ-electrons. Increases were also observed in the values of intrinsic energy resolution with shorter shaping time constants. Виміряно світловий вихід S для сцинтиляторів, заснованих на ZnSe, при опроміненні α-частками і важкими іонами 81Br у діапазоні енергій E =2.8...42.2 МеВ. При опроміненні спостерігалася пропорційність S(Е α ,i) до енергій Еα ≤7 МеВ. Істотне відхилення від лінійності в області більш високих енергій пояснюється різним внеском у S як первинних, так і δ-електронів. Помітний вплив на криву пропорційності і спектри енергії робило легування Te. Измерен световой выход S для сцинтилляторов, основанных на ZnSe, при облучении α-частицами и тяжелыми ионами 81Br в диапазоне энергий E=2.8...42.2 МэВ. При облучении наблюдалась пропорциональность S(Еα,i) до энергий Еα ≤7 МэВ. Существенное отклонение от линейности в области более высоких энергий объясняется различным вкладом в S как первичных, так и и δ-электронов. Заметное влияние на кривую пропорциональности и спектры энергии оказывало легирование Te. en Національний науковий центр «Харківський фізико-технічний інститут» НАН України Вопросы атомной науки и техники Детекторы и детектирование ядерных излучений On proportionality of the light output of semiconductor scintillators under irradiation by alpha-particles and heavy ions Про пропорційність світлового виходу напівпровідникового сцинтиляторапри опроміненні α-частками і важкими іонами О пропорциональности светового выхода полупроводникового сцинтиллятора при облучении α -частицами и тяжелыми ионами Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
On proportionality of the light output of semiconductor scintillators under irradiation by alpha-particles and heavy ions |
| spellingShingle |
On proportionality of the light output of semiconductor scintillators under irradiation by alpha-particles and heavy ions Ryzhikov, V. Klamra, W. Starzhinskiy, N. Gal’chinetskii, L. Silin, V. Lisetski, L. Danshin, E. Kapusta, M. Szawlowski, M. Katrunov, K. Chernikov, V. Tarasov, V. Balcerzyk, M. Moszyński, M. Детекторы и детектирование ядерных излучений |
| title_short |
On proportionality of the light output of semiconductor scintillators under irradiation by alpha-particles and heavy ions |
| title_full |
On proportionality of the light output of semiconductor scintillators under irradiation by alpha-particles and heavy ions |
| title_fullStr |
On proportionality of the light output of semiconductor scintillators under irradiation by alpha-particles and heavy ions |
| title_full_unstemmed |
On proportionality of the light output of semiconductor scintillators under irradiation by alpha-particles and heavy ions |
| title_sort |
on proportionality of the light output of semiconductor scintillators under irradiation by alpha-particles and heavy ions |
| author |
Ryzhikov, V. Klamra, W. Starzhinskiy, N. Gal’chinetskii, L. Silin, V. Lisetski, L. Danshin, E. Kapusta, M. Szawlowski, M. Katrunov, K. Chernikov, V. Tarasov, V. Balcerzyk, M. Moszyński, M. |
| author_facet |
Ryzhikov, V. Klamra, W. Starzhinskiy, N. Gal’chinetskii, L. Silin, V. Lisetski, L. Danshin, E. Kapusta, M. Szawlowski, M. Katrunov, K. Chernikov, V. Tarasov, V. Balcerzyk, M. Moszyński, M. |
| topic |
Детекторы и детектирование ядерных излучений |
| topic_facet |
Детекторы и детектирование ядерных излучений |
| publishDate |
2004 |
| language |
English |
| container_title |
Вопросы атомной науки и техники |
| publisher |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| format |
Article |
| title_alt |
Про пропорційність світлового виходу напівпровідникового сцинтиляторапри опроміненні α-частками і важкими іонами О пропорциональности светового выхода полупроводникового сцинтиллятора при облучении α -частицами и тяжелыми ионами |
| description |
In the energy range E =2.8...42.2 MeV, the light output S was measured for ZnSe-based scintillators under irradiation with α-
particles and heavy ions 81Br. Under such irradiation, the proportionality S(Еα,i) is observed up to energies Еα≤7 MeV. Substantial
deviation from linearity in the region of higher energies is explained by different contribution to S from both primary and δ-electrons. Increases were also observed in the values of intrinsic energy resolution with shorter shaping time constants.
Виміряно світловий вихід S для сцинтиляторів, заснованих на ZnSe, при опроміненні α-частками і
важкими іонами 81Br у діапазоні енергій E =2.8...42.2 МеВ. При опроміненні спостерігалася пропорційність S(Е
α
,i) до енергій Еα ≤7 МеВ. Істотне відхилення від лінійності в області більш високих енергій пояснюється
різним внеском у S як первинних, так і δ-електронів. Помітний вплив на криву пропорційності і спектри енергії
робило легування Te.
Измерен световой выход S для сцинтилляторов, основанных на ZnSe, при облучении α-частицами и тяжелыми ионами 81Br в диапазоне энергий E=2.8...42.2 МэВ. При облучении наблюдалась пропорциональность S(Еα,i) до энергий Еα ≤7 МэВ. Существенное отклонение от линейности в области более высоких энергий объясняется различным вкладом в S как первичных, так и и δ-электронов. Заметное влияние на кривую пропорциональности и спектры энергии оказывало легирование Te.
|
| issn |
1562-6016 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/78968 |
| citation_txt |
On proportionality of the light output of semiconductor scintillators under irradiation by alpha-particles and heavy ions / V. Ryzhikova, W. Klamrab, N. Starzhinskiya, L. Gal’chinetskiia, V. Silina, L. Lisetskia, E. Danshina, M. Balcerzykc, M. Moszy ńskic, M. Kapustac, M. Szawlowskid, K. Katrunova, V. Chernikova, V. Tarasov // Вопросы атомной науки и техники. — 2004. — № 1. — С. 156-158. — Бібліогр.: 7 назв. — англ. |
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| fulltext |
ON PROPORTIONALITY OF THE LIGHT OUTPUT
OF SEMICONDUCTOR SCINTILLATORS UNDER IRRADIATION
BY ALPHA-PARTICLES AND HEAVY IONS
V. Ryzhikova, W. Klamrab, N. Starzhinskiya, L. Gal’chinetskiia, V. Silina, L. Lisetskia, E. Dan-
shina, M. Balcerzykc, M. Moszyńskic, M. Kapustac, M. Szawlowskid, K. Katrunova,
V. Chernikova, V. Tarasova
aSTC “Institute for Single Crystals”, 60, Lenin Ave., 61001, Kharkov, Ukraine;
bRoyal Institute of Technology, Department of Physics, Frescati S-104 05 Stockholm, Sweden;
cSoltan Institute for Nuclear Studies, 05-400 Otwock, Poland;
dAdvanced Photonix, Inc. 1240 Avenida Acaso, Camarillo, CA 93012, USA;
E-mail: nstar747@isc.kharkov.com
In the energy range E =2.8...42.2 MeV, the light output S was measured for ZnSe-based scintillators under irradiation with α-
particles and heavy ions 81Br. Under such irradiation, the proportionality S(Еα,i) is observed up to energies Еα ≤7 MeV. Substantial
deviation from linearity in the region of higher energies is explained by different contribution to S from both primary and δ-elec-
trons. Increases were also observed in the values of intrinsic energy resolution with shorter shaping time constants.
PACS: 29.27.Fa
1. INTRODUCTION
For most purposes in radiation physics and technolo-
gy, scintillator detectors should show proportionality be-
tween the energy deposited in the crystal and the number
of scintillation photons. However, most of the known
scintillators show non-proportionality not only for γ-radi-
ation [1], but also for charged particles [2]. The origin of
such non-proportionality has not been fully understood.
There are indications that scintillators containing light el-
ements, such as YAP (Ce), are better in this respect [1-
3]. However, a comparative study of LSO, GSO and
YSO proved this non-proportionality to be independent
from the chemical composition of the crystal [3,4]. The
aim of the present work was to study the non-proportion-
ality and energy resolution of new scintillators of small
effective atomic number A -ZnSe(IVD) crystals (IVD –
isovalent dopant Te, O or Cd). Our studies were carried
out using irradiation by α-particles, heavy ions 81Br and
γ-quanta in the energy range E =2.8...42.2 MeV.
2. EXPERIMENTAL PROCEDURES
ZnSe(IVD) crystals were grown as described earlier
[5] in STC “Institute for Single Crystals”, Kharkov,
Ukraine. From the single crystals, plates were cut, of
dimensions 10x10 mm2 and thickness 0.8…1.0 mm. In
parallel with ZnSe(IVD), similar measurements were
carried out for CsI(Tl) crystals. Comparative character-
istics of ZnSe(IVD) and CsI(Tl) are given in Table.
Characteristics of scintillators produced at the STC “Institute for Single Crystals”
Crystal λmax, nm τ, µs α, cm-1 A S, rel.un. Tmax, К
ZnSe(IVD) 600…640 2…150 0,05…0,15 33 ≤150 400…450
CsI(Tl) 550 0,63…3,4 ≤ 0.05 54 100 350…400
Designations: λmax – maximum position in the radioluminesce spectra, τ - decay time, α - scintillation light absorp-
tion coefficient, A – effective atomic number, S – relative light output, Tmax – maximum operation temperature.
For light output and energy resolution measurements,
we used a 16 mm diameter windowless large area
avalanche photodiode (APD) from Advanced Photonix,
Inc. It is characterized by quantum efficiency (QE) of
90% for 610 nm and 640 nm. We have also used 10×10
mm Hamamatsu silicon PIN photodiode (PD) S3590-08.
The experimental setup included a charge sensitive
EG&G ORTEC preamplifier (Model 142AH) and Tenn-
elec Spectroscopy Amplifier (Model 244) or EG&G OR-
TEC 672 Spectroscopy Amplifier. A PC-based multi-
channel analyzer Tukan, produced at SINS, was used to
record energy spectra.
The experiments with heavy ions were performed at
the Tandem Laboratory in Uppsala, Sweden, using alpha
and 81Br beams from the tandem accelerator. The alpha
beam energies were 3…15 MeV and 13…50 MeV for
81Br. The ZnSe(IVD) crystal was mounted on S3590-08
Hamamatsu PIN PD and placed in a scattering chamber
at an angle of 20° relative to the beam direction. Sym-
metrically, but at ∼20° angle, a 13x13x1 mm CsI(Tl)
crystal was positioned, mounted on a 5 mm thick plexi
light guide and Hamamatsu S1723-06 PIN PD. A gold
foil, placed in the scattering chamber, was used for
Rutherford scattering of the incident beam. Thus, the
corresponding energies of the scattered beam were
2.8…14.9 and 10…42.2 MeV for alpha and 81Br, re-
spectively.
3. RESULTS AND DISCUSSION
Our studies have shown that, except some specifi-
cally mentioned cases, the type of IVD does not notice-
ably affect the energy dependence of the light output of
ZnSe-based scintillators.
To determine the light output of ZnSe(IVD) crys-
___________________________________________________________
PROBLEMS OF ATOMIC SIENCE AND TECHNOLOGY. 2004. № 1.
Series: Nuclear Physics Investigations (42), p.156-158.156
mailto:nstar747@isc.kharkov.com
tals, the number of e-h pairs (Ne-h, e-h/MeV) was mea-
sured with APD. The number of e-h pairs produced by
the ZnSe(IVD) crystals in APD was measured by com-
paring the position of the 662 keV γ-peak detected in the
scintillator with that of 16.6 keV X-rays from a 93Mo
source detected directly by the APD. The measurements
were carried out at the APD gain of 50 and shaping time
constant of the amplifier of 10 µs. The measurement with
APD with QE of 90% at 610 nm yielded 26400±1500 e-h
pairs/MeV, that is 29300±3000 ph/MeV. This quantity is,
however, much lower than 80000 ph/MeV quoted in Ref.
[4]. The difference is attributed to the long component of
the light pulse with the decay time constant much longer
than 10 µs, which was only partially integrated in the
amplifier. The long decay time constant of about 3 µs of
the primary light pulse requires also the use of a long
shaping time constants of about 10 µs in the amplifier,
which seriously limits the counting rate capability of the
detector. The manufacturer quotes self-absorption con-
stant for scintillation light as 0.15 cm-1. The lower light
output for thicker samples suggests that scintillation light
undergoes not only self-absorption but that it also travels
a much longer path than the crystal thickness, because of
internal reflections and reflection from the photodiode
surface. A very approximate inspection of the light pulse
shape done by single photon method indicates that the
light pulse consists of a dominating decay component of
2.7±0.3 µs for O- and Cd-doped ZnSe crystals, and a
much longer one with decay times well above 10 µs for
Te-doped ones. It is not integrated out by the longest
shaping times of 10 µs in the spectroscopy amplifier. It
may suggest that the total light output of ZnSe(IVD) can
easily be much larger than that reported in this work.
The proportionality curve, defined as the photoelec-
tron yield measured at a specific energy of excitation rel-
ative to the photoelectron yield at 662 keV, is shown in
Fig.1. For example, ZnSe(Te) is a rather proportional
scintillator down to 85% at 5.9 keV. Note a dip in the
proportionality curve at 30 keV, close to the K absorp-
tion line of Te (31.8 keV). The same unusual dip is ob-
served for CaF2(Eu) at 48.5 keV [7]. The value of the dip
(more then 5% in proportionality for ZnSe(Te)) cannot
be accounted by simple additional absorption of the
heavy element dopant. We have observed a shoulder
(Fig.2) in the energy spectrum of 57Co source (122.06 keV
line), which can be attributed, by energy difference, to the
Te escape peak. The Kα1, Kα2, Kβ1 emission lines of Te are
at 27.4723; 27.2017; 30.9957 keV respectively. The rela-
tive intensity of this shoulder suggests that Te dopant in-
teracts with fast electrons generated by γ-rays more inten-
sively than it could be expected just from its relative
abundance. This and above observations are in good
agreement. For O- and Cd-doped ZnSe crystals, these
features were not observed.
The results from the in-beam measurements for
ZnSe(IVD) and CsI(Tl) are plotted in terms of light out-
put per energy versus energy, as shown in Figs.3 and 4.
The data for the ZnSe(IVD) crystal exhibit a slightly non-
proportional behavior, in particular for the alpha beam.
This is manifested by a slightly concave curve at lower
energies. The non-proportionality for CsI(Tl) is also ob-
served, with the relative light output increasing with en-
ergy for α-particles and decreasing for 81Br. The ob-
tained ratio quantities are 93% and 86% for ZnSe(IVD)
and CsI(Tl), respectively.
Fig.1. Proportionality of light output of ZnSe(Te) in
units of light output at 662 keV
Fig.2. Energy spectra of γ-rays from a 57Co source mea-
sured with ZnSe(Te) crystal coupled to the APD at 6 μs
shaping time constant in the spectroscopy amplifier
The above procedure of comparing the light
yield/energy ratio values is motivated by similar shapes
of the curves in Fig.3 and 4, as well as by the fact that
the data point at the highest alpha beam energies,
which strongly indicates approaching the region of pro-
portionality. One general conclusion is that the non-
proportionality for CsI(Tl) at the studied beam energies
is much stronger than in the case of ZnSe(IVD).
According to Murray et al. [2] the non-proportional
scintillation response is attributed to the non-proportion-
ality in the electron response. In fact, results from elec-
tron response measurements by means of Compton Co-
incidence Technique obtained by Mengesha et al. [1]
show that many scintillators exhibit significant devia-
tions from proportionality (up to about 40%),
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Fig. 3. Light yield/energy versus energy for ZnSe(Te)
and CsI(Tl) for the alpha beam excitation
Fig. 4. Light yield/energy versus energy for ZnSe(Te)
and CsI(Tl) for the 81Br beam excitation
mostly pronounced in the low-energy region. CsI(Tl) rep-
resents a typical case in that respect. The electron response
for ZnSe(IVD) has not been studied so far. An alternative
explanation concerns the effect of δ-rays produced by the
primary particles, as suggested by Murray et al. [2]. These
δ-rays most likely result in rather low energetic electrons.
In a very simplified approach the total light yield Ltot may
be presented as the sum of two components: Ltot =Lp+Lδ,
where subscripts p and δ represents primary and δ-rays,
respectively. The light yield due to primary particles de-
pends on the energy gap of the material, i.e. is a function
of 1/Egap; see Ref. [6]. On the other hand, the production of
δ-rays has been found to be dependent on E/A (A – atomic
number) of the incident particles [7]. Since the energy gap
for ZnSe(Te) is as low as 2.6 eV, the component Lp is ex-
pected to be very large and thus much dominant compared
to the second term Lδ. The slight deviation from propor-
tionality in Fig.3 for alpha beam on ZnSe(Te) may most
likely be attributed to a contribution from the low-energy
δ-electrons. This may also be an indication for a non-pro-
portionality in the electron response. The electron response
for CsI(Tl) is highly non-proportional [1], mostly in the
low-energy region, and the energy gap for this crystal is
relatively high, 6.4 eV, making the component Lp less
strong compared to the second term.
4. CONCLUSION
ZnSe (IVD) scintillators have a good proportionali-
ty of the light output with energy, and this property is
also accompanied by high energy resolution. This con-
firms the assumption that high intrinsic resolution of
scintillators is due to good proportionality of the crystals.
REFERENCES
1. W.Mengesha and J.D.Valentine. A Technique for
Measuring Scintillator Electron Energy Resolution
using the Compton Coincidence Technique // Pro-
ceedings of the Fifth International Conference on
Inorganic Scintillators and Their Applications
”SCINT99”, Moscow State University, Russia.
1999, p.173.
2. R.B.Murray and A.Meyer. Scintillation Response
of Activated Inorganic Crystals to Various
Charged Particles // Physical Review. 1961, v. 122,
N 3, p. 815-826.
3. M.Balcerzyk, W.Klamra, M.Moszynski, M.Kapus-
ta, and M.Szawlowski. Nonproportionality and
temporal response of ZnSe:Te scintillator studied
by large area avalanche photodiodes and photo-
multipliers // Proceedings of the Fifth Internation-
al Conference on Inorganic Scintillators and Their
Applications ”SCINT99”, Moscow State Universi-
ty, Russia. 1999, p.571.
4. W.Klamra, M.Balcerzyk, M.Kapusta, A.Kerek,
M.Moszynski, L.-O.Norlin, D.Novak, G.Possnert.
Studies of scintillation light non-proportionality of
ZnSe(Te), CsI(Tl) and YAP(Ce) crystals using
heavy ions // Nucl. Instr. and Meth. 2002, v. A.
484, p. 327-332.
5. L.V.Atroschenko, S.F.Burachas, L.P.Gal’chinet-
skii, B.V.Grinev, V.D.Ryzhikov, N.G.Starzhin-
skiy. Crystals of scintillators and detectors of ion-
izing radiation on their base. Kiev: “Naukova
dumka”, 1998, p. 310.
6. A.Lempicki, A.Wojtowicz, E.Berman. Fundamen-
tal limits of scintillator performance // Nucl. Instr.
and Meth. 1993, v. A. 333, N 2,3, p. 304-311.
7. R.B.Murray, A.Meyer. Effect of delta rays on the
response of inorganic scintillators to heavy parti-
cles // IRE Trans. Nucl. Sci. 1962, v. NS-9, N 3,
p. 33-35.
О ПРОПОРЦИОНАЛЬНОСТИ СВЕТОВОГО ВЫХОДА ПОЛУПРОВОДНИКОВОГО
СЦИНТИЛЛЯТОРА ПРИ ОБЛУЧЕНИИ α-ЧАСТИЦАМИ И ТЯЖЕЛЫМИ ИОНАМИ
В. Рыжиков, В. Кламра, Н. Стажинский, Л. Гальчинецкий, В. Силин, Л. Лисецкий, Е. Даншин, М. Бальцержик,
М. Мажинский, М. Капуста, М. Цевловский, К. Катрунов, В. Черников, В. Тарасов
Измерен световой выход S для сцинтилляторов, основанных на ZnSe, при облучении α-частицами и тя-
желыми ионами 81Br в диапазоне энергий E=2.8...42.2 МэВ. При облучении наблюдалась пропорциональ-
ность S(Еα,i) до энергий Еα ≤7 МэВ. Существенное отклонение от линейности в области более высоких энер-
гий объясняется различным вкладом в S как первичных, так и и δ-электронов. Заметное влияние на кривую
пропорциональности и спектры энергии оказывало легирование Te.
ПРО ПРОПОРЦІЙНІСТЬ СВІТЛОВОГО ВИХОДУ НАПІВПРОВІДНИКОВОГО СЦИНТИЛЯТОРА
158
ПРИ ОПРОМІНЕННІ α-ЧАСТКАМИ І ВАЖКИМИ ІОНАМИ
В. Рижиков, В. Кламра, М. Стажинський, Л. Гальчинецький, В. Силин, Л. Лисецький, Є. Даншин, М. Бальцержик,
М. Мажинський, М. Капуста, М. Цевловський, К. Катрунов, В. Черніков, В. Тарасов
Виміряно світловий вихід S для сцинтиляторів, заснованих на ZnSe, при опроміненні α-частками і
важкими іонами 81Br у діапазоні енергій E =2.8...42.2 МеВ. При опроміненні спостерігалася пропорційність S(Е
α,i) до енергій Еα ≤7 МеВ. Істотне відхилення від лінійності в області більш високих енергій пояснюється
різним внеском у S як первинних, так і δ-електронів. Помітний вплив на криву пропорційності і спектри енергії
робило легування Te.
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Series: Nuclear Physics Investigations (42), p.156-158.159
REFERENCES
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