Radiative processes of amorphization and hydrogenation in monocrystalline silicon
Saved in:
| Published in: | Вопросы атомной науки и техники |
|---|---|
| Date: | 2001 |
| Main Authors: | Dovbnya, A.N., Yefimov, V.P., Dyomin, V.S. |
| Format: | Article |
| Language: | English |
| Published: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2001
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/79034 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Radiative processes of amorphization and hydrogenation in monocrystalline silicon / A.N. Dovbnya, V.P. Yefimov, V.S. Dyomin // Вопросы атомной науки и техники. — 2001. — № 5. — С. 214-216. — Бібліогр.: 7 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of UkraineSimilar Items
Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing
by: Smyntyna, V.A., et al.
Published: (2010)
by: Smyntyna, V.A., et al.
Published: (2010)
Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing
by: V. A. Smyntyna, et al.
Published: (2010)
by: V. A. Smyntyna, et al.
Published: (2010)
Optoelectronic properties of hydrogenated amorphous silicon–carbon and nanocrystalline-silicon thin films
by: B. A. Najafov, et al.
Published: (2013)
by: B. A. Najafov, et al.
Published: (2013)
Optoelectronic properties of hydrogenated amorphous silicon–carbon and nanocrystalline-silicon thin films
by: B. A. Nadzhafov, et al.
Published: (2013)
by: B. A. Nadzhafov, et al.
Published: (2013)
Monocrystalline structure formation of doped perfect silicon crystals
by: Azarenkov, N.А., et al.
Published: (2016)
by: Azarenkov, N.А., et al.
Published: (2016)
Luminescent and radiation characteristics of monocrystalline diamond powders
by: O. G. Lysenko, et al.
Published: (2019)
by: O. G. Lysenko, et al.
Published: (2019)
A mechanism of diamond-abrasive finishing of monocrystalline silicon carbide
by: Ju. D. Filatov, et al.
Published: (2013)
by: Ju. D. Filatov, et al.
Published: (2013)
Creation of spatial quantum filaments in the volume of monocrystalline silicon by the coulomb explosion
by: V. P. Efimov
Published: (2010)
by: V. P. Efimov
Published: (2010)
Raman scattering in the process of tin-induced crystallization of amorphous silicon
by: V. Neimash, et al.
Published: (2016)
by: V. Neimash, et al.
Published: (2016)
Influence of deep-level impurities on the strain electric properties of monocrystalline silicon
by: S. Zainabidinov, et al.
Published: (2017)
by: S. Zainabidinov, et al.
Published: (2017)
Influence of deep-level impurities on the strain electric properties of monocrystalline silicon
by: S. Zainabidinov, et al.
Published: (2017)
by: S. Zainabidinov, et al.
Published: (2017)
Specificity of high-pure monocrystalline silicon production for various registering and converting devices
by: Trubitsyn, Yu.V., et al.
Published: (2000)
by: Trubitsyn, Yu.V., et al.
Published: (2000)
Raman scattering in the process of tin-induced crystallization of amorphous silicon
by: V. B. Neimash, et al.
Published: (2016)
by: V. B. Neimash, et al.
Published: (2016)
An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties
by: Dovbnya, A.N., et al.
Published: (2006)
by: Dovbnya, A.N., et al.
Published: (2006)
Formation of nanocrystalline silicon in tin-doped amorphous silicon films
by: R. M. Rudenko, et al.
Published: (2020)
by: R. M. Rudenko, et al.
Published: (2020)
Formation of nanocrystalline silicon in tin-doped amorphous silicon films
by: R. M. Rudenko, et al.
Published: (2020)
by: R. M. Rudenko, et al.
Published: (2020)
Mechanism of tin-induced crystallization in amorphous silicon
by: V. B. Neimash, et al.
Published: (2014)
by: V. B. Neimash, et al.
Published: (2014)
Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon
by: Gutsulyak, B.I., et al.
Published: (2005)
by: Gutsulyak, B.I., et al.
Published: (2005)
Mechanism of tin-induced crystallization in amorphous silicon
by: V. B. Neimash, et al.
Published: (2014)
by: V. B. Neimash, et al.
Published: (2014)
Influence of microwave radiation on relaxation processes in silicon carbide
by: Bacherikov, Yu.Yu., et al.
Published: (2020)
by: Bacherikov, Yu.Yu., et al.
Published: (2020)
Influence of microwave radiation on relaxation processes in silicon carbide
by: Yu. Yu. Bacherikov, et al.
Published: (2020)
by: Yu. Yu. Bacherikov, et al.
Published: (2020)
Domain structure regularization in monocrystalline barium hexaferrite
by: A. L. Nikytenko, et al.
Published: (2018)
by: A. L. Nikytenko, et al.
Published: (2018)
Domain structure regularization in monocrystalline barium hexaferrite
by: Nikytenko, A.L., et al.
Published: (2018)
by: Nikytenko, A.L., et al.
Published: (2018)
Tin-induced crystallization of amorphous silicon under pulsed laser irradiation
by: V. B. Neimash, et al.
Published: (2017)
by: V. B. Neimash, et al.
Published: (2017)
Tin-induced crystallization of amorphous silicon under pulsed laser irradiation
by: V. B. Neimash, et al.
Published: (2017)
by: V. B. Neimash, et al.
Published: (2017)
AFM Study of Surface of the Metallic Condensates on the Monocrystalline Silicon and Energy Parameters of Interface Interactions in the ‘Metallic Condensate—Semiconductor' System
by: B. P. Koman, et al.
Published: (2015)
by: B. P. Koman, et al.
Published: (2015)
Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum
by: Neimash, V.B., et al.
Published: (2013)
by: Neimash, V.B., et al.
Published: (2013)
Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation
by: Neimash, V.B., et al.
Published: (2017)
by: Neimash, V.B., et al.
Published: (2017)
Tin doping effect on crystallization of amorphous silicon, obtained by vapor deposition in vacuum
by: V. B. Neimash, et al.
Published: (2013)
by: V. B. Neimash, et al.
Published: (2013)
Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation
by: V. B. Neimash, et al.
Published: (2017)
by: V. B. Neimash, et al.
Published: (2017)
Photoelectric properties of SiGe films covered with amorphous- and polycrystalline-silicon layers
by: V. Shmid, et al.
Published: (2019)
by: V. Shmid, et al.
Published: (2019)
Photoelectric properties of SiGe films covered with amorphous- and polycrystalline-silicon layers
by: V. Shmid, et al.
Published: (2019)
by: V. Shmid, et al.
Published: (2019)
Radiation-induced effects in silicon
by: Gaidar, G.P., et al.
Published: (2019)
by: Gaidar, G.P., et al.
Published: (2019)
Monopolar photoconductivity of the inversion layer and "slow"-surface levels in the structures of macroporous and monocrystalline silicon in condition of strong surface lighting
by: N. I. Karas, et al.
Published: (2018)
by: N. I. Karas, et al.
Published: (2018)
Electrodes based on amorphous metallic aluminium alloys in hydrogen emission reactions
by: L. M. Boichyshyn, et al.
Published: (2015)
by: L. M. Boichyshyn, et al.
Published: (2015)
Polished surface roughness of optoelectronic components made of monocrystalline materials
by: Ju. Filatov, et al.
Published: (2016)
by: Ju. Filatov, et al.
Published: (2016)
Theoretical analysis of the efficiency of silicon solar cells with amorphized layers in the space charge region
by: A. V. Kozynetz, et al.
Published: (2015)
by: A. V. Kozynetz, et al.
Published: (2015)
Microhardness of helium-ion implanted iron-yttrium granate monocrystalline films
by: V. V. Kurovets, et al.
Published: (2012)
by: V. V. Kurovets, et al.
Published: (2012)
Radiation-stimulated processes in silicon structures with contacts based on TiN
by: Nasyrov, M.U., et al.
Published: (2015)
by: Nasyrov, M.U., et al.
Published: (2015)
Radiation-stimulated processes in silicon structures with contacts based on TiN
by: Nasyrov, M.U., et al.
Published: (2015)
by: Nasyrov, M.U., et al.
Published: (2015)
Similar Items
-
Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing
by: Smyntyna, V.A., et al.
Published: (2010) -
Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing
by: V. A. Smyntyna, et al.
Published: (2010) -
Optoelectronic properties of hydrogenated amorphous silicon–carbon and nanocrystalline-silicon thin films
by: B. A. Najafov, et al.
Published: (2013) -
Optoelectronic properties of hydrogenated amorphous silicon–carbon and nanocrystalline-silicon thin films
by: B. A. Nadzhafov, et al.
Published: (2013) -
Monocrystalline structure formation of doped perfect silicon crystals
by: Azarenkov, N.А., et al.
Published: (2016)