Plasma devices for ion beam and plasma deposition applications
We describe the operation of some new axially-symmetric plasma devices based on plasma-optical principles and the plasma lens configuration. Plasma devices of this kind using permanent magnets can be applied in a number of different applications for ion treatment and materials synthesis. Описуються...
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| Published in: | Вопросы атомной науки и техники |
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| Date: | 2005 |
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2005
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| Cite this: | Plasma devices for ion beam and plasma deposition applications / A. Goncharov, A. Demchishin, A. Dobrovolskiy, E. Kostin, O. Panchenko, C. Pavlov, I. Protsenko, B. Stetsenko, E. Ternovoy, I. G. Brown // Вопросы атомной науки и техники. — 2005. — № 1. — С.169-171. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860197117015883776 |
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| author | Goncharov, A. Demchishin, A. Dobrovolskiy, A. Kostin, E. Panchenko, O. Pavlov, C. Protsenko, I. Stetsenko, B. Ternovoy, E. Brown, I. G. |
| author_facet | Goncharov, A. Demchishin, A. Dobrovolskiy, A. Kostin, E. Panchenko, O. Pavlov, C. Protsenko, I. Stetsenko, B. Ternovoy, E. Brown, I. G. |
| citation_txt | Plasma devices for ion beam and plasma deposition applications / A. Goncharov, A. Demchishin, A. Dobrovolskiy, E. Kostin, O. Panchenko, C. Pavlov, I. Protsenko, B. Stetsenko, E. Ternovoy, I. G. Brown // Вопросы атомной науки и техники. — 2005. — № 1. — С.169-171. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Вопросы атомной науки и техники |
| description | We describe the operation of some new axially-symmetric plasma devices based on plasma-optical principles and the plasma lens configuration. Plasma devices of this kind using permanent magnets can be applied in a number of different applications for ion treatment and materials synthesis.
Описуються деякі нові плазмові прилади, основані на використанні принципів плазмооптики та конфігурації плазмової лінзи. Прилади такого типу, що використовують постійні магніти, можуть застосовуватись для іонної обробки та отримання нових матеріалів.
Описываются некоторые новые плазменные приборы, основанные на принципах плазмооптики и конфигурации плазменной линзы. Приборы такого типа, в которых используются постоянные магниты, могут применяться для ионной обработки и получения новых материалов.
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| first_indexed | 2025-12-07T18:09:14Z |
| format | Article |
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PLASMA DEVICES FOR ION BEAM AND PLASMA DEPOSITION
APPLICATIONS
A. Goncharov1, A. Demchishin2, A. Dobrovolskiy1, E. Kostin3, O. Panchenko1, C. Pavlov3,
I. Protsenko1, B. Stetsenko1, E. Ternovoy2 and I.G. Brown4
1 Institute of Physics NAS of Ukraine, Kiev 03028, Ukraine;
2 E.O. Paton Electric Welding Institute of the NASU, Kiev 03680, Ukraine;
3 Institute for Nuclear Research of the NASU, Kiev 03028, Ukraine;
4 Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
We describe the operation of some new axially-symmetric plasma devices based on plasma-optical principles and
the plasma lens configuration. Plasma devices of this kind using permanent magnets can be applied in a number of
different applications for ion treatment and materials synthesis.
PACS: 52.50.Dg , 52.77.Dq, 52.77.Bn
1. INTRODUCTION
Plasma-optical devices are a subset of a large class of
plasma devices (plasma accelerators, magnetrons,
magnetically-insulated diodes, thrusters) that use a plasma
medium in crossed electric and magnetic fields with
closed electron drift. Such devices are attractive for the
production, formation and manipulation of high current
beams of heavy ions. This is related to the fact that such
beams cannot exist without electron compensation of their
positive ion space charge. The electrostatic plasma lens is
a well-developed plasma-optical device for focusing and
manipulating high current, large-area, heavy ion beams,
where the concern of beam space charge neutralization is
critical [1,2]. Following an extensive program of
investigation of the plasma lens at the IP NASU (Kiev),
some collaborative work between the Kiev group and
LBNL (Berkeley) was initiated, and the results of this
joint work have been published [3,4]. In these
investigations we demonstrated the value of application of
the plasma lens for carrying out high dose ion
implantation processing [5]. A vacuum arc ion source was
used to form a wide-aperture (diameter 10 cm), moderate-
energy (10–50 keV), heavy metal ion beam (Bi, Pb, Ta,
Cu, Zn, Co), which was focused by an electrostatic
plasma lens that had been designed, made and tested at
the IP NASU. We showed that the ion beam current
density focused onto the implantation target could be
increased by a factor of 30–40. We explored the variation
of the ion current density profile at the target as a function
of plasma lens parameters, and preliminary tests of high-
dose ion implantation (dose up to 5 x 10 17 cm-2) of C and
Co into a silicon substrate were carried out. The lens used
in these experiments employed a magnetic field that was
formed by conventional current-driven electromagnetic
coils. We noted an increase in the focused ion beam
current density for specific low magnetic field strengths.
We found a very narrow range of low magnetic fields for
which the optical properties of the plasma lens improve
significantly. Under these conditions, the plasma noise
within the lens volume is drastically reduced, and high
beam compression can be obtained. This opens up the
attractive possibility of a new generation of compact, low-
cost lenses that are based on the use of permanent
magnets rather than conventional current-driven field
coils. Such improved lenses, having low noise and
minimal spherical aberrations, could be suitable for use in
the injection beam lines of high current heavy ion particle
accelerators, where there exists a severe concern of beam
space-charge blow-up. Experimental investigations of the
focusing properties of a plasma lens based on permanent
magnets for establishing the required magnetic field
configuration were carried out collaboratively both at the
IP NASU and at LBNL [6]. The plasma lens used at
LBNL is shown on Fig. 1.
Fig. 1. Electrostatic plasma lens based on permanent
magnets. Input aperture 10 cm, length 15 cm, number of
cylindrical electrodes 11. The magnetic field strength
formed by the Fe-Nd-B permanent magnets at the center
of the lens is 300 G
One particularly interesting result to come out of this
background work was the observation that the plasma
lens configuration, involving crossed electric and
magnetic fields, provides an inherently attractive method
for establishing a stable plasma discharge at low pressure.
Use of the plasma lens configuration in this way was
further investigated, leading to a low cost, low
maintenance, plasma device using permanent magnets
Problems of Atomic Science and Technology. 2005. № 1. Series: Plasma Physics (10). P. 169-171 169
and possessing considerable flexibility with respect to
spatial configuration (planar, cylindrical, elliptical).
Here we describe the operation of some novel axial-
symmetric plasma devices based on the plasma lens
configuration, and summarize the results of some
preliminary experiments in which their application for ion
treatment was investigated.
2. ION TREATMENT PLASMA DEVICES
We made and tested one particular version of
cylindrical plasma device based on plasma optic
principles and the plasma lens configuration, designed for
the ion treatment of substrates with complicated
cylindrical shape. A simplified schematic of this device is
shown in Fig. 2.
Fig. 2. Schematic of ion-cleaning plasma device.
1 - sample holder; 2 - flange; 3 - chamber; 4 - pole of the
magnet system; 5 - magnets; 6 - anode; 7 - anode holder
The operation of this device was investigated
experimentally. Device parameters optimized included the
magnetic field strength and configuration, width and
length of plasma channel, working gas pressure and
manner of feed gas, value of anode potential and
dependencies of volt-amperes characteristics for different
pressures. We found that under optimal conditions this
device can form an ion-plasma flow focused on a
cylindrical substrate of diameter 10–40 mm with total ion
current up to 10–30mA and energy in the range 300–2000
eV. The device operates reliability and reproducibly in the
range of working gas (argon) pressure (6–12) × 10-4 Torr.
Under these conditions the maximum cleaning (etching)
rate is in range 0.5–3.4 nm/s depending on the substrate
material. Determination of the etching
Fig. 3. Etching depth profile
rate was done for a range of materials including titanium,
molybdenum, tungsten, copper, ceramics 22XC, and
polycor. As an example, we determined the surface
etching profile for a round titanium tubular substrate of
40 mm diameter. The following experimental conditions
were used: gas pressure 9 × 10-4 Torr, discharge voltage
900 V, the ion treatment duration 60 minutes. The results
of these measurements are shown in Fig. 3.
It can be seen that the width of the erosion trace at the
sample surface spans about 5–6 mm. The most intense
etching occurs over a ring-shaped region of 2 mm width
at the center of the erosion trace. The etching rate at the
center is ~1.0 nm/s. For other materials the following
were measured: Mo ~1.3 nm/s; W ~1.7 nm/s; Cu ~3.0
nm/s; ceramic 22XC ~0.4 nm/s; polycor (polycrystalline
aluminum oxide) ~0.15 nm/s. The working gas pressure
also influences the etching rate, as clearly illustrated for
the case of Cu: for an Ar pressure of 9 × 10-4 Torr the etch
rate is ~3.0 nm/s; for a pressure of 8 × 10-4 Torr, 0.6 nm/s;
and for 7 × 10-4 Torr, 0.5 nm/s. The etch rate also depends
on the energy of the ions. Since, as the ion energy is
varied, not only does the sputtering coefficient change but
also the current density as well, thus the dependence of
etch rate on energy is close to linear. The working
parameters of this ion cleaning device allow this tool to be
combined with a cylindrical magnetron sputtering system
so as to form a single hybrid processing mode.
3. MULTIFUNCTIONAL VACUUM SETUP
To further test and develop our new plasma-optical
and magnetron sputtering devices, a new multifunctional
setup (Fig. 4), was made. The inverted cylindrical
magnetron allows sputtering of the internal surfaces of
cathodes onto all sides of three-dimensional substrates
placed inside the tubular target. This enables coating
deposition onto long-length articles, such as wires, fibers,
rods, biomedical stents and implants.
170
Fig.4. Multifunctional vacuum setup.
1 - vacuum chamber; 2 – rotational drive for magnetron
magnetic system; 3 - magnetron; 4 - processed sample;
5 - optical monitor; 6 - ion cleaning plasma devices; 7 -
heater; 8 - drive for vertical displacement of the sample
The cylindrical dc magnetron sputtering system
includes a tubular water-cooled cathode with internal
diameter 230 mm and height 200 mm, a rotating magnetic
system using SmCo permanent magnets, power up to
8 kW, discharge voltage up to 700 V, and a rotating
magnetic field system for increasing target material
utilization. The anode system of the inverted cylindrical
magnetron includes 9 rod electrodes made of non-
magnetic material (molybdenum or stainless steel
X18H10T), each 6 mm diameter and 140 mm long and
placed like the magnetic system on a rotating table. This
allows rigid fixing of the anodes with respect to the
magnets, and provides minimum shielding of the flow of
sputtered cathode material. Target material usage
efficiency of up to 70% has been achieved.
The use of the ion cleaning device together with the
magnetron sputtering system was complicated by the
difference in optimal argon gas pressure needed for steady
operation of each device (2 × 10-3 Torr and 9 × 10-4 Torr
for magnetron and ion-cleaning device, respectively). In
the process of experimental investigations we found some
conditions for which pressure compatibility occurs for
both devices at a gas pressure of about 2 × 10-3 Torr.
4. CONCLUSION
The plasma-optical devices that we have described
can be used separately, for example for ion treatment of
substrates, and in combination with each other for pre-
cleaning surfaces and deposition of functional metal and
nonmetal coatings on round substrates in a single
processing cycle, for example on anilox rolls which are
used in the printing and textile industry. The d.c. ion-
plasma devices also allow reactive deposition of binary
chemical compounds (e.g., nitrides, oxides, carbides) with
nanostructure of interest for basic and applied
investigations in the field of nanotechnologies.
ACKNOWLEDGEMENTS
This works was supported by STCU #1596 and in part
by STCU project #118(K).
REFERENCES
1. A.Goncharov, A.Dobrovolsky, A.Zatuagan, I.Protsenko
// IEEE Trans. Plasma Sci. (21) 1993, N5, p. 573.
2. A.Goncharov, A.Dobrovolsky, et al.//Rev. Sci. Instrum.
(69). 1998, N2, p. 1135.
3. A. Goncharov, I. Protsenko, G. Yushkov, I. Brown //
Appl. Phys. Lett. (75). 1999, N7, p. 911.
4. A. Goncharov, I. Protsenko, G. Yushkov, I. Brown //
IEEE Trans. Plasma Sci. (28). 2000, N6, p. 2238.
5. A. Goncharov, I. Protsenko, G. Yushkov, O. Monteiro,
and I. Brown// Surf. Coat. Technol. 128–129, 2000, p.15.
6. A. Goncharov,V. Gorshkov, et al.// Rev. Sci. Instr. (73).
2002, N2, p. 1001.
ПЛАЗМЕННЫЕ ПРИБОРЫ ДЛЯ МАНИПУЛИРОВАНИЯ ИОННЫМИ ПУЧКАМИ И
ПЛАЗМЕННОГО ОСАЖДЕНИЯ
А. Гончаров , А. Демчишин, А. Добровольский, Е. Костин, О. Панченко, С. Павлов, И. Проценко,
Б. Стеценко, Е. Терновой и Я. Браун
Описываются некоторые новые плазменные приборы, основанные на принципах плазмооптики и
конфигурации плазменной линзы. Приборы такого типа, в которых используются постоянные магниты,
могут применяться для ионной обработки и получения новых материалов.
ПЛАЗМОВІ ПРИЛАДИ ДЛЯ ВИКОРИСТАННЯ З ІОННИМИ ПУЧКАМИ ТА ПЛАЗМОВОГО
ОСАДЖЕННЯ
О. Гончаров, А. Демчишин, А. Добровольський, Е. Костин, О. Панченко, С. Павлов, І. Проценко,
Б. Стеценко, Е. Терновой і Я. Браун
171
Описуються деякі нові плазмові прилади, основані на використанні принципів плазмооптики та
конфігурації плазмової лінзи. Прилади такого типу, що використовують постійні магніти, можуть
застосовуватись для іонної обробки та отримання нових матеріалів.
.
172
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| id | nasplib_isofts_kiev_ua-123456789-79058 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1562-6016 |
| language | English |
| last_indexed | 2025-12-07T18:09:14Z |
| publishDate | 2005 |
| publisher | Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| record_format | dspace |
| spelling | Goncharov, A. Demchishin, A. Dobrovolskiy, A. Kostin, E. Panchenko, O. Pavlov, C. Protsenko, I. Stetsenko, B. Ternovoy, E. Brown, I. G. 2015-03-25T18:45:12Z 2015-03-25T18:45:12Z 2005 Plasma devices for ion beam and plasma deposition applications / A. Goncharov, A. Demchishin, A. Dobrovolskiy, E. Kostin, O. Panchenko, C. Pavlov, I. Protsenko, B. Stetsenko, E. Ternovoy, I. G. Brown // Вопросы атомной науки и техники. — 2005. — № 1. — С.169-171. — Бібліогр.: 6 назв. — англ. 1562-6016 PACS: 52.50.Dg , 52.77.Dq, 52.77.Bn https://nasplib.isofts.kiev.ua/handle/123456789/79058 We describe the operation of some new axially-symmetric plasma devices based on plasma-optical principles and the plasma lens configuration. Plasma devices of this kind using permanent magnets can be applied in a number of different applications for ion treatment and materials synthesis. Описуються деякі нові плазмові прилади, основані на використанні принципів плазмооптики та конфігурації плазмової лінзи. Прилади такого типу, що використовують постійні магніти, можуть застосовуватись для іонної обробки та отримання нових матеріалів. Описываются некоторые новые плазменные приборы, основанные на принципах плазмооптики и конфигурации плазменной линзы. Приборы такого типа, в которых используются постоянные магниты, могут применяться для ионной обработки и получения новых материалов. This works was supported by STCU #1596 and in part by STCU project #118(K). en Національний науковий центр «Харківський фізико-технічний інститут» НАН України Вопросы атомной науки и техники Low temperature plasma and plasma technologies Plasma devices for ion beam and plasma deposition applications Плазмові прилади для використання з іонними пучками та плазмового осадження Плазменные приборы для манипулирования ионными пучками и плазменного осаждения Article published earlier |
| spellingShingle | Plasma devices for ion beam and plasma deposition applications Goncharov, A. Demchishin, A. Dobrovolskiy, A. Kostin, E. Panchenko, O. Pavlov, C. Protsenko, I. Stetsenko, B. Ternovoy, E. Brown, I. G. Low temperature plasma and plasma technologies |
| title | Plasma devices for ion beam and plasma deposition applications |
| title_alt | Плазмові прилади для використання з іонними пучками та плазмового осадження Плазменные приборы для манипулирования ионными пучками и плазменного осаждения |
| title_full | Plasma devices for ion beam and plasma deposition applications |
| title_fullStr | Plasma devices for ion beam and plasma deposition applications |
| title_full_unstemmed | Plasma devices for ion beam and plasma deposition applications |
| title_short | Plasma devices for ion beam and plasma deposition applications |
| title_sort | plasma devices for ion beam and plasma deposition applications |
| topic | Low temperature plasma and plasma technologies |
| topic_facet | Low temperature plasma and plasma technologies |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/79058 |
| work_keys_str_mv | AT goncharova plasmadevicesforionbeamandplasmadepositionapplications AT demchishina plasmadevicesforionbeamandplasmadepositionapplications AT dobrovolskiya plasmadevicesforionbeamandplasmadepositionapplications AT kostine plasmadevicesforionbeamandplasmadepositionapplications AT panchenkoo plasmadevicesforionbeamandplasmadepositionapplications AT pavlovc plasmadevicesforionbeamandplasmadepositionapplications AT protsenkoi plasmadevicesforionbeamandplasmadepositionapplications AT stetsenkob plasmadevicesforionbeamandplasmadepositionapplications AT ternovoye plasmadevicesforionbeamandplasmadepositionapplications AT brownig plasmadevicesforionbeamandplasmadepositionapplications AT goncharova plazmovípriladidlâvikoristannâzíonnimipučkamitaplazmovogoosadžennâ AT demchishina plazmovípriladidlâvikoristannâzíonnimipučkamitaplazmovogoosadžennâ AT dobrovolskiya plazmovípriladidlâvikoristannâzíonnimipučkamitaplazmovogoosadžennâ AT kostine plazmovípriladidlâvikoristannâzíonnimipučkamitaplazmovogoosadžennâ AT panchenkoo plazmovípriladidlâvikoristannâzíonnimipučkamitaplazmovogoosadžennâ AT pavlovc plazmovípriladidlâvikoristannâzíonnimipučkamitaplazmovogoosadžennâ AT protsenkoi plazmovípriladidlâvikoristannâzíonnimipučkamitaplazmovogoosadžennâ AT stetsenkob plazmovípriladidlâvikoristannâzíonnimipučkamitaplazmovogoosadžennâ AT ternovoye plazmovípriladidlâvikoristannâzíonnimipučkamitaplazmovogoosadžennâ AT brownig plazmovípriladidlâvikoristannâzíonnimipučkamitaplazmovogoosadžennâ AT goncharova plazmennyepriborydlâmanipulirovaniâionnymipučkamiiplazmennogoosaždeniâ AT demchishina plazmennyepriborydlâmanipulirovaniâionnymipučkamiiplazmennogoosaždeniâ AT dobrovolskiya plazmennyepriborydlâmanipulirovaniâionnymipučkamiiplazmennogoosaždeniâ AT kostine plazmennyepriborydlâmanipulirovaniâionnymipučkamiiplazmennogoosaždeniâ AT panchenkoo plazmennyepriborydlâmanipulirovaniâionnymipučkamiiplazmennogoosaždeniâ AT pavlovc plazmennyepriborydlâmanipulirovaniâionnymipučkamiiplazmennogoosaždeniâ AT protsenkoi plazmennyepriborydlâmanipulirovaniâionnymipučkamiiplazmennogoosaždeniâ AT stetsenkob plazmennyepriborydlâmanipulirovaniâionnymipučkamiiplazmennogoosaždeniâ AT ternovoye plazmennyepriborydlâmanipulirovaniâionnymipučkamiiplazmennogoosaždeniâ AT brownig plazmennyepriborydlâmanipulirovaniâionnymipučkamiiplazmennogoosaždeniâ |