Radiation tolerance investigation of a Si detectors and microelectronics using NSC KIPT linacs
A possibility of full irradiation tests of semiconductor detectors and microelectronics using electron accelerators are considered in the present work. The techniques for irradiation and for detector tests were described. The data on the efficiency of electron and bremsstrahlung action on the Si bul...
Збережено в:
| Опубліковано в: : | Вопросы атомной науки и техники |
|---|---|
| Дата: | 2001 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2001
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/79269 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Radiation tolerance investigation of a Si detectors and microelectronics using NSC KIPT linacs / A.N. Dovbnya, N.I. Maslov, N.A. Dovbnya // Вопросы атомной науки и техники. — 2001. — № 3. — С. 164-166. — Бібліогр.: 12 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860076555623989248 |
|---|---|
| author | Dovbnya, A.N. Maslov, N.I. Dovbnya, N.A. |
| author_facet | Dovbnya, A.N. Maslov, N.I. Dovbnya, N.A. |
| citation_txt | Radiation tolerance investigation of a Si detectors and microelectronics using NSC KIPT linacs / A.N. Dovbnya, N.I. Maslov, N.A. Dovbnya // Вопросы атомной науки и техники. — 2001. — № 3. — С. 164-166. — Бібліогр.: 12 назв. — англ. |
| collection | DSpace DC |
| container_title | Вопросы атомной науки и техники |
| description | A possibility of full irradiation tests of semiconductor detectors and microelectronics using electron accelerators are considered in the present work. The techniques for irradiation and for detector tests were described. The data on the efficiency of electron and bremsstrahlung action on the Si bulk material are presented.
|
| first_indexed | 2025-12-07T17:14:01Z |
| format | Article |
| fulltext |
RADIATION TOLERANCE INVESTIGATION OF A SI DETECTORS
AND MICROELECTRONICS USING NSC KIPT LINACS
A.N. Dovbnya, N.I. Maslov, N.A. Dovbnya
NSC KIPT, Kharkov, Ukraine
nikolai.maslov@kipt.kharkov.ua
A possibility of full irradiation tests of semiconductor detectors and microelectronics using electron accelerators are
considered in the present work. The techniques for irradiation and for detector tests were described. The data on the
efficiency of electron and bremsstrahlung action on the Si bulk material are presented.
PACS numbers: 29.40.Wk
1 INTRODUCTION
Silicon planar detectors (SPD) are used at present
widely in physics, its use started in medicine and in dif-
ferent fields of technics. Microelectronics technologies
developed during last decades are used for SPD produc-
tion. Fig. 1 shows the cross-section of the silicon plane
detector [1] and Fig. 2 shows the corner of the multi-
channel microstrip detector [2], which are designed and
studied at NSC KIPT.
Fig.1.Cross section of the silicon plane detector:
1 - active zone of the detector, 2 - oxide layer, 3 - Al
layers, 4 - p/n transitions of the active zone and of
the guard ring, 5 - n+-doped silicon layer, 6 - Al
layer of the guard ring.
Fig. 2. Corner of the multichannel microstrip detec-
tor: 1 - contact pad of the microstrip active zone,
2 - contact pad of the integrated capacitors,
3 - polysilicon resistors, 4 - p+-guard ring, 5 - bas-
ing pad of microstrip active elements, 6 - n+-guard
ring.
Generally, semiconductor detectors are used by the
action of high-energy particles of different types and of
wide-energy ranges. In high-energy physics experi-
ments, for example, a total equivalent irradiation dose
may be up to 10 Mrad and up to 1014 n/cm2 [3].
The action of radiation on semiconductor detectors
is implemented, mainly, via two mechanisms. The first
mechanism of bulk damaging consists in breaking the
crystal symmetry through displacing atoms from their
lattice sites. The second mechanism of surface damage
consists in changing the charge state of the Si/SiO2 in-
terface through the oxide ionization [4, 5]. In view of
this, to simulate the real radiation conditions, it is neces-
sary to irradiate the detector with ionizing radiation and
with required neutron fluence. Namely, the neutrons
simulate the action of high-energy particles on the bulk
of the detector material [4]. Fast simulation of bulk
damage for development of detectors may be also, prob-
ably, carried out with sources of other particles. These
particles would possess certain properties, such as a
high penetrating ability and high energy of shifted
atoms in interaction.
In the present work a possibility of full irradiation
detector and detector microelectronics tests using elec-
tron accelerators are considered. The data on the effi-
ciency of electron and bremsstrahlung action on a Si
bulk material are compared with the neutron efficiency.
2 INVESTIGATION OF HIGH-ENERGY
ELECTRON ACTION ON SI DETECTORS
The energy absorbed by irradiated objects (dose in
Gy) is one of the basic parameters characterizing the
interaction between ionizing radiation and substance.
However, it is not sufficient to measure only the dose if
one irradiates semiconductor detectors and microelec-
tronics with high-energy particles. In this case the
radiation effects are determined essentially by volume
radiation defects arising due to displacements of
substance atoms by particles of acting radiation.
2.1 Absorbed dose
The dose (Gy or rad) in the specimen irradiated with
electrons was determined using the well-known values
of ionization energy losses and the measured integral
densities of electron fluxes. The dose and its distribution
over the detector were also measured with colour film
dose meters. The colour film-ref dose meters permits
one to perform measurements with an accuracy ≤20%
under steady outer conditions and the temperature not
exceeding 60oC. The measurements of the optical dens-
ity of dose meters were made with micro-photometers.
2.2 Investigation of electrons action on bulk ma-
terial
The efficiency of electrons action on bulk material
ВОПРОСЫ АТОМНОЙ НАУКИ И ТЕХНИКИ. 2001. №3.
Серия: Ядерно-физические исследования (38), с. 164-166.
164
of the microstrip detector and readout electronics is de-
termined from the change in the lifetime of charge carri-
ers in silicon specimens-witnesses [6].
The lifetime of nonequilibrium charge carriers (τ) is
an electrophysical characteristic of a semiconductor
material that is most sensitive to radiation. For example,
if one irradiates samples with 10 MeV electrons the
changes in the lifetime of nonequilibrium charge
carriers can be measured for the integral flux density
1010 e-/cm2. The change of the inverse lifetime 1/τ
satisfies the linear dependence in a broad range of
integral flux densities F that is very convenient for de-
termining the damage constant (Fig. 3).
Fig.3. Inverse lifetime plotted against integral flux
densities of electrons with energies: 1 – 5 MeV,
2 - 30 MeV, 3 – 120 MeV.
It is known that neglecting the influence of the sur-
face one can determine the leakage current of a semi-
conductor detector from the relationship [7]
j=qnjWA/2τ, (1)
where q is the electron charge, W is the depth of the de-
tector depletion, A is the active region of the detector, τ
is the effective minority carrier lifetime and nj is the int-
rinsic carrier concentration. The expression for the chan-
ge of the leakage current of the detector normalized by
one acting particle or one dose unit will have the form
∆j= 0.5qnjWA·∆τ-1/D, (2)
similar to the well-known expression for the radiation
constant Кτ of a semiconductor material [5, 6]
Kτ=∆τ-1/D. (3)
Since the leakage current and the radiation constant
of the detector material have similar dependencies on
the carrier lifetime, then measuring the quantity Kτ for
the detector material, one can judge on the efficiency of
radiation action on a semiconductor detectors.
3 DAMAGING EFFICIENCY OF HIGH EN-
ERGY ELECTRONS
In Fig .4 plotted is the efficiency of the radiation
damage of the detector silicon Кτ.
Fig. 4. Efficiency of the radiation damage of the de-
tector silicon under action of accelerated electrons
(□) and gamma-quanta of bremsstrahlung spec-
trum (•).
In Fig. 5 plotted are the inverse lifetimes 1/τ in the
silicon specimen and in the Si detector as a function of
the irradiation dose. Irradiation by 20 MeV electrons.
Fig. 5. Leakage current (1), inverse lifetimes (2) in
Si detector and inverse lifetime (3) in the silicon
specimen as a function of the dose.
The comparison of the values of the slope of 1/τ
=f(D) dependences show that the radiation resistance of
the detector is higher than that of the initial silicon.
Probably, it can be explained by the heterogeneity of the
detector surface as well as by the annihilation centers in
the material bulk created in the process of technological
treatment. Comparison with neutron irradiation
(14 MeV) shows the efficiency ratio ~40 for 20 MeV
electrons.
So, using the specimen-witness one has the possibil-
ity to control the conditions of irradiation by comparing
the measured radiation damage constant Кτ with the re-
sults obtained previously. The irradiation of the speci-
men-witness was performed also with the aim to esti-
mate the influence of surface and other effects on the
change of the leakage current during irradiation. The
8 mm thickness of the silicon specimen was selected
sufficiently high so that the lifetime of minor charge
carriers τNCC can be measured without taking into ac-
count the surface influence of the commonly used con-
tactless RF-method. At the same time, the silicon thick-
ness was sufficiently small for neglecting the electron
energy losses over the specimen thickness under irradia-
tion.
165
4 INVERSION OF N-TYPE SILICON BY DE-
TECTORS IRRADIATION
A change in the lifetime of charge carriers in a bulk
material leads by irradiation mainly to the decreased
signal/noise ratio. One more effect of Si detectors dam-
aging by hard irradiation was displayed and is studied
intensively last ten years [8-9]. Radiation damage in Si
detectors results in a change of the effective impurity
concentration and in conductivity type inversion of Si.
Radiation removes shallow impurities by the creation of
donor and acceptors and, since acceptor-like states pre-
dominate, the n-type Si inverts to the p-type. A detector
work possibility is lost, if a detector is not tolerant to
type inversion or it takes to increase the depletion volt-
age after type inversion.
The change of the type inversion may be studied us-
ing capacitance voltage (C-V) measurements [8-10].
Fig. 6 shows the bulk Si capacity against the depletion
voltage for different irradiation doses.
Fig. 6. Bulk capacity against the depletion voltage for
different integral doses. Irradiation by 20 MeV elec-
trons.
Fig. 7 shows the full depletion voltage against the ir-
radiation dose.
Fig.7. Full depletion voltage for different irradiation
dose. O, ð , ∆, +– are here the data for four different de-
tectors. Irradiation by 20 MeV electrons.
The voltage of total depletion is determined from the
point where the strong and weak variations of capacity
against voltage in log-log coordinates intersect.
5 CONCLUSIONS
The possibility of full irradiation tests of semicon-
ductor detectors and microelectronics in NSC KIPT
were presented. The techniques for irradiation [11] and
for detector tests [12] were created and developed last
years. Required Quality Assurance plan for tests was re-
gistered by the accredited body ISO 9000.
REFERENCES
1. G.Bochek, V.Kulibaba, N.Maslov, S.Naumov,
A.Starodubtsev. Silicon pad detectors for a simple
tracking system and multiplicity detectors creation
// Problems of Atomic Science and Technology.
Issue: Nuclear-Physics Research (37). 2001, v. 1,
p. 36-39.
2. N.Maslov, V.Kulibaba, S.Potin, A.Starodubtsev,
P.Kuijer, A.P. de Haas, V.Perevertailo. Radiation
tolerance of single-sided microstrip detector with
Si3N4 insulator // Nuclear Physics B (Proc. Suppl.).
1999, #78, p. 689-694.
3. Proc. of the Workshop on LHC Backgrounds,
CERN, 2 March 1996.
4. Holmes-Siedle, M.Robbins, S.Watts et al. Radia-
tion tolerance of single-sided silicon microstrips //
Nucl. Instrum. Meth. in Phys. Res. 1993, A 326,
p. 511-523.
5. H.W. Kraner // Nucl. Instr. and Meth. 1984, A 225,
p. 616-618.
6. N.I.Maslov, G.D.Pugachev, M.I.Heifets // Physics
and Technics of Semiconductors. 1982, v. 16, No 3,
p. 513-515 (in Russian).
7. A.S. Grove. Physics and Technics of Semiconduc-
tor Devices. New York: Wiley, 1967. (Ch. 6,
p. 176-177).
8. D.Pitzl, N.Cartiglia, B.Hubbard et al. Type inver-
sion in silicon detectors // Nucl. Instrum. Meth. in
Phys. Res. 1992, A 311, p. 98-104.
9. E.Fretwurst, N.Claussen, N.Croitoru et al. Radi-
ation hardness of silicon detectors for future col-
liders // Nucl. Instrum. Meth. in Phys. Res. 1994,
A 339, p. 357-364.
10. A.P. de Haas, P.Kuijer, V.I.Kulibaba, N.I.Maslov,
V.L.Perevertailo, V.D.Ovchinnik, S.M.Potin,
A.F.Starodubtsev. Characteristics and radiation tol-
erance of a double-sided microstrip detector with
polysilicon biasing resistors // Problems of Atomic
Science and Technology. Issue: Nuclear-Physics
Research (36). 2000, v. 2, p. 26-33.
11. K.I.Antipov, M.I.Ayzatsky, Yu.I.Akchurin et al.
Electron linacs in NSC KIPT: R&D and application
// Problems of Atomic Science and Technology.
Issue: Nuclear-Physics Research (37). 2001, v. 1,
p. 40-47.
12. P.Kuijer, A.Kaplij, V.Kulibaba, N.Maslov,
V.Ovchinnik, S.Potin, A.Starodubtsev. Control
complex for a double-sided microstrip detector
production and tests // Problems of Atomic Science
and Technology. Issue: Nuclear-Physics Research
(36). 2000, v. 2, p. 41-45.
166
|
| id | nasplib_isofts_kiev_ua-123456789-79269 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1562-6016 |
| language | English |
| last_indexed | 2025-12-07T17:14:01Z |
| publishDate | 2001 |
| publisher | Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| record_format | dspace |
| spelling | Dovbnya, A.N. Maslov, N.I. Dovbnya, N.A. 2015-03-30T08:32:03Z 2015-03-30T08:32:03Z 2001 Radiation tolerance investigation of a Si detectors and microelectronics using NSC KIPT linacs / A.N. Dovbnya, N.I. Maslov, N.A. Dovbnya // Вопросы атомной науки и техники. — 2001. — № 3. — С. 164-166. — Бібліогр.: 12 назв. — англ. 1562-6016 PACS numbers: 29.40.Wk https://nasplib.isofts.kiev.ua/handle/123456789/79269 A possibility of full irradiation tests of semiconductor detectors and microelectronics using electron accelerators are considered in the present work. The techniques for irradiation and for detector tests were described. The data on the efficiency of electron and bremsstrahlung action on the Si bulk material are presented. en Національний науковий центр «Харківський фізико-технічний інститут» НАН України Вопросы атомной науки и техники Radiation tolerance investigation of a Si detectors and microelectronics using NSC KIPT linacs Исследование стойкости к излучению Si детекторов и микроэлектроники с использованием линейных ускорителей ННЦ ХФТИ Article published earlier |
| spellingShingle | Radiation tolerance investigation of a Si detectors and microelectronics using NSC KIPT linacs Dovbnya, A.N. Maslov, N.I. Dovbnya, N.A. |
| title | Radiation tolerance investigation of a Si detectors and microelectronics using NSC KIPT linacs |
| title_alt | Исследование стойкости к излучению Si детекторов и микроэлектроники с использованием линейных ускорителей ННЦ ХФТИ |
| title_full | Radiation tolerance investigation of a Si detectors and microelectronics using NSC KIPT linacs |
| title_fullStr | Radiation tolerance investigation of a Si detectors and microelectronics using NSC KIPT linacs |
| title_full_unstemmed | Radiation tolerance investigation of a Si detectors and microelectronics using NSC KIPT linacs |
| title_short | Radiation tolerance investigation of a Si detectors and microelectronics using NSC KIPT linacs |
| title_sort | radiation tolerance investigation of a si detectors and microelectronics using nsc kipt linacs |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/79269 |
| work_keys_str_mv | AT dovbnyaan radiationtoleranceinvestigationofasidetectorsandmicroelectronicsusingnsckiptlinacs AT maslovni radiationtoleranceinvestigationofasidetectorsandmicroelectronicsusingnsckiptlinacs AT dovbnyana radiationtoleranceinvestigationofasidetectorsandmicroelectronicsusingnsckiptlinacs AT dovbnyaan issledovaniestoikostikizlučeniûsidetektorovimikroélektronikisispolʹzovaniemlineinyhuskoriteleinnchfti AT maslovni issledovaniestoikostikizlučeniûsidetektorovimikroélektronikisispolʹzovaniemlineinyhuskoriteleinnchfti AT dovbnyana issledovaniestoikostikizlučeniûsidetektorovimikroélektronikisispolʹzovaniemlineinyhuskoriteleinnchfti |