Radiation tolerance investigation of a Si detectors and microelectronics using NSC KIPT linacs

A possibility of full irradiation tests of semiconductor detectors and microelectronics using electron accelerators are considered in the present work. The techniques for irradiation and for detector tests were described. The data on the efficiency of electron and bremsstrahlung action on the Si bul...

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Bibliographic Details
Published in:Вопросы атомной науки и техники
Date:2001
Main Authors: Dovbnya, A.N., Maslov, N.I., Dovbnya, N.A.
Format: Article
Language:English
Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2001
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/79269
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Radiation tolerance investigation of a Si detectors and microelectronics using NSC KIPT linacs / A.N. Dovbnya, N.I. Maslov, N.A. Dovbnya // Вопросы атомной науки и техники. — 2001. — № 3. — С. 164-166. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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