Large-area surface wave plasma source
A surface wave plasma source for the production of a large-diameter, high electron density and low electron temperature plasma at low pressure without using a magnetic field for plasma processing and thin film preparation are. The DC or RF voltage with the frequency of 13.56 MHz can supply the sourc...
Збережено в:
| Опубліковано в: : | Вопросы атомной науки и техники |
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| Дата: | 2002 |
| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2002
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| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/79286 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Large-area surface wave plasma source / N.A. Azarenkov, A.A. Bizyukov, A.V. Gapon, A.Y. Kashaba, K.N. Sereda, A.Ph. Tseluyko, N.N. Yunakov // Вопросы атомной науки и техники. — 2002. — № 5. — С. 118-120. — Бібліогр.: 6 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | A surface wave plasma source for the production of a large-diameter, high electron density and low electron temperature plasma at low pressure without using a magnetic field for plasma processing and thin film preparation are. The DC or RF voltage with the frequency of 13.56 MHz can supply the source. The pumping-out of the source is carried out through the insulated substrate holder. The plasma source operates in a working gas pressure range of 3∙10⁻² ÷ 10⁻⁴ Torr with changing the RF power in a range of 50÷1000 W during the discharge on surface waves with the mode 0 excited by a ring antenna. The plasma density has a homogeneous distribution over a diameter of 300 mm and varies in a range of 10⁸÷10¹⁰ cm⁻³ at electron temperature of 2÷7 eV depending on external parameters. An ion beam density in the presence of the RF bias applied to the substrate holder reached 0.1 mA/сm² with homogeneous distribution over the diameter of 300 mm. The total ion current to the substrate holder with a diameter of 467 mm reaches the value of 2 A with average ion energy of 200 eV. Numerical analysis of electric field distribution over the processing chamber in linear approach was made and compared to experimental results obtained.
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| ISSN: | 1562-6016 |