Large-area surface wave plasma source

A surface wave plasma source for the production of a large-diameter, high electron density and low electron temperature plasma at low pressure without using a magnetic field for plasma processing and thin film preparation are. The DC or RF voltage with the frequency of 13.56 MHz can supply the sourc...

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Bibliographische Detailangaben
Veröffentlicht in:Вопросы атомной науки и техники
Datum:2002
Hauptverfasser: Azarenkov, N.A., Bizyukov, A.A., Sereda, K.N., Tseluyko, A.Ph., Yunakov, N.N., Gapon, A.V., Kashaba, A.Y.
Format: Artikel
Sprache:English
Veröffentlicht: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2002
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Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/79286
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Large-area surface wave plasma source / N.A. Azarenkov, A.A. Bizyukov, A.V. Gapon, A.Y. Kashaba, K.N. Sereda, A.Ph. Tseluyko, N.N. Yunakov // Вопросы атомной науки и техники. — 2002. — № 5. — С. 118-120. — Бібліогр.: 6 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
Beschreibung
Zusammenfassung:A surface wave plasma source for the production of a large-diameter, high electron density and low electron temperature plasma at low pressure without using a magnetic field for plasma processing and thin film preparation are. The DC or RF voltage with the frequency of 13.56 MHz can supply the source. The pumping-out of the source is carried out through the insulated substrate holder. The plasma source operates in a working gas pressure range of 3∙10⁻² ÷ 10⁻⁴ Torr with changing the RF power in a range of 50÷1000 W during the discharge on surface waves with the mode 0 excited by a ring antenna. The plasma density has a homogeneous distribution over a diameter of 300 mm and varies in a range of 10⁸÷10¹⁰ cm⁻³ at electron temperature of 2÷7 eV depending on external parameters. An ion beam density in the presence of the RF bias applied to the substrate holder reached 0.1 mA/сm² with homogeneous distribution over the diameter of 300 mm. The total ion current to the substrate holder with a diameter of 467 mm reaches the value of 2 A with average ion energy of 200 eV. Numerical analysis of electric field distribution over the processing chamber in linear approach was made and compared to experimental results obtained.
ISSN:1562-6016