High voltage modulators based on solid-state elements for linacs (review)
The data on developing and creating high-voltage pulse modulators for linacs with using Insulator Gate Bipolar Transistors (IGBT) and Integrated Gate Commutate Thyristors (IGCT) are presented. Comparative analysis of main characteristics such as efficiency, reliability and cost are made for standa...
Saved in:
| Published in: | Вопросы атомной науки и техники |
|---|---|
| Date: | 2004 |
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2004
|
| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/79363 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | High voltage modulators based on solid-state elements for linacs (review) / V.I. Beloglazov, V.S. Dyomin, L.S. Dovbush, A.I. Kosoj, S.M. Shkirida, Yu.D. Tur // Вопросы атомной науки и техники. — 2004. — № 2. — С. 117-119. — Бібліогр.: 5 назв. — англ. |