Features of angular distributions of 1 GeV electrons scattered by thin silicon monocrystal

• Published in: Вопросы атомной науки и техники
• Date: 2001
• Main Authors: Fomin, S.P., Shcherbak, S.F., Kasilov, V.I., Lapin, N.I., Shul'ga, N.F.
• Format: Article
• Language: English
• Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2001
• Subjects: Electrodynamics of high energies in matter and strong fields
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/79420
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Features of angular distributions of 1 GeV electrons scattered by thin silicon monocrystal / S.P. Fomin, S.F. Shcherbak, V.I. Kasilov, N.I. Lapin, N.F. Shul'ga // Вопросы атомной науки и техники. — 2001. — № 6. — С. 138-143. — Бібліогр.: 8 назв. — англ.

The result of theoretical and experimental investigations of angular distribution structure of 1 GeV electrons scattered by silicon crystal of 10 mm thickness are presented. The electron beam was falling on the crystal under different angles (from zero to the critical channeling angle) in respect to...