Orientation effects in ultrarelativistic electron transmission through a single crystal

• Published in: Вопросы атомной науки и техники
• Date: 2001
• Main Authors: Blazhevich, S.V., Bochek, G.L., Kulibaba, V.I., Maslov, N.I., Shramenko, B.I.
• Format: Article
• Language: English
• Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2001
• Subjects: Electrodynamics of high energies in matter and strong fields
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/79472
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Orientation effects in ultrarelativistic electron transmission through a single crystal / S.V. Blazhevich, G.L. Bochek, V.I. Kulibaba, N.I. Maslov, B.I. Shramenko // Вопросы атомной науки и техники. — 2001. — № 6. — С. 144-146. — Бібліогр.: 5 назв. — англ.

The results of experimental investigations of the 1.2 GeV electron transmission dynamics in a thin single crystal of Si are discussed. The interpretation of the electron scattering orientation dependencies measured under different scattering angles is carried out. The existence of scattering direction, where one can observe the scattering intensity independence on the crystallographic plane orientation is shown. Besides the existence of crystallographic axis orientation, where one can observe the region of uniform angle distribution of scattering intensity, is shown.