Orientation effects in ultrarelativistic electron transmission through a single crystal

The results of experimental investigations of the 1.2 GeV electron transmission dynamics in a thin single crystal of Si are discussed. The interpretation of the electron scattering orientation dependencies measured under different scattering angles is carried out. The existence of scattering directi...

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Published in:Вопросы атомной науки и техники
Date:2001
Main Authors: Blazhevich, S.V., Bochek, G.L., Kulibaba, V.I., Maslov, N.I., Shramenko, B.I.
Format: Article
Language:English
Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2001
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Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/79472
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Orientation effects in ultrarelativistic electron transmission through a single crystal / S.V. Blazhevich, G.L. Bochek, V.I. Kulibaba, N.I. Maslov, B.I. Shramenko // Вопросы атомной науки и техники. — 2001. — № 6. — С. 144-146. — Бібліогр.: 5 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-79472
record_format dspace
spelling Blazhevich, S.V.
Bochek, G.L.
Kulibaba, V.I.
Maslov, N.I.
Shramenko, B.I.
2015-04-02T15:06:12Z
2015-04-02T15:06:12Z
2001
Orientation effects in ultrarelativistic electron transmission through a single crystal / S.V. Blazhevich, G.L. Bochek, V.I. Kulibaba, N.I. Maslov, B.I. Shramenko // Вопросы атомной науки и техники. — 2001. — № 6. — С. 144-146. — Бібліогр.: 5 назв. — англ.
1562-6016
PACS:05.45.+b; 29.27Ac
https://nasplib.isofts.kiev.ua/handle/123456789/79472
The results of experimental investigations of the 1.2 GeV electron transmission dynamics in a thin single crystal of Si are discussed. The interpretation of the electron scattering orientation dependencies measured under different scattering angles is carried out. The existence of scattering direction, where one can observe the scattering intensity independence on the crystallographic plane orientation is shown. Besides the existence of crystallographic axis orientation, where one can observe the region of uniform angle distribution of scattering intensity, is shown.
The authors acknowledge the financial support from the Russian Foundation for Basic Research under grant № 00-02-17523 and Ukraine Ministry of Education and Science “Program of the works on atomic science and technique” NSC KIPT, 2001-2002, project №04/32.
en
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
Вопросы атомной науки и техники
Electrodynamics of high energies in matter and strong fields
Orientation effects in ultrarelativistic electron transmission through a single crystal
Ориентационные эффекты при прохождении ультрарелятивистских электронов через монокристалл
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Orientation effects in ultrarelativistic electron transmission through a single crystal
spellingShingle Orientation effects in ultrarelativistic electron transmission through a single crystal
Blazhevich, S.V.
Bochek, G.L.
Kulibaba, V.I.
Maslov, N.I.
Shramenko, B.I.
Electrodynamics of high energies in matter and strong fields
title_short Orientation effects in ultrarelativistic electron transmission through a single crystal
title_full Orientation effects in ultrarelativistic electron transmission through a single crystal
title_fullStr Orientation effects in ultrarelativistic electron transmission through a single crystal
title_full_unstemmed Orientation effects in ultrarelativistic electron transmission through a single crystal
title_sort orientation effects in ultrarelativistic electron transmission through a single crystal
author Blazhevich, S.V.
Bochek, G.L.
Kulibaba, V.I.
Maslov, N.I.
Shramenko, B.I.
author_facet Blazhevich, S.V.
Bochek, G.L.
Kulibaba, V.I.
Maslov, N.I.
Shramenko, B.I.
topic Electrodynamics of high energies in matter and strong fields
topic_facet Electrodynamics of high energies in matter and strong fields
publishDate 2001
language English
container_title Вопросы атомной науки и техники
publisher Національний науковий центр «Харківський фізико-технічний інститут» НАН України
format Article
title_alt Ориентационные эффекты при прохождении ультрарелятивистских электронов через монокристалл
description The results of experimental investigations of the 1.2 GeV electron transmission dynamics in a thin single crystal of Si are discussed. The interpretation of the electron scattering orientation dependencies measured under different scattering angles is carried out. The existence of scattering direction, where one can observe the scattering intensity independence on the crystallographic plane orientation is shown. Besides the existence of crystallographic axis orientation, where one can observe the region of uniform angle distribution of scattering intensity, is shown.
issn 1562-6016
url https://nasplib.isofts.kiev.ua/handle/123456789/79472
citation_txt Orientation effects in ultrarelativistic electron transmission through a single crystal / S.V. Blazhevich, G.L. Bochek, V.I. Kulibaba, N.I. Maslov, B.I. Shramenko // Вопросы атомной науки и техники. — 2001. — № 6. — С. 144-146. — Бібліогр.: 5 назв. — англ.
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first_indexed 2025-12-07T18:50:49Z
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