Development of a detector based on a CVD-diamond for the use in radiotherapy facilities
High radiation hardness, chemical resistance, high temperature operation capabilities stimulate a growing interest to use diamond materials as detectors of ionizing radiation. Samples of CVD-diamond materials in sizes 4×3 mm and 4×1 mm with thickness from 50 microns up to 500 microns have been gro...
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| Цитувати: | Development of a detector based on a CVD-diamond for the use in radiotherapy facilities / S.V. Akulinichev, V.S. Klenov, L.V. Kravchuk, S.G. Lebedev, A.V. Feschenko, V.E. Yants // Вопросы атомной науки и техники. — 2006. — № 3. — С. 134-136. — Бібліогр.: 5 назв. — англ. |
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Akulinichev, S.V. Klenov, V.S. Kravchuk, L.V. Lebedev, S.G. Feschenko, A.V. Yants, V.E. 2015-04-05T16:21:50Z 2015-04-05T16:21:50Z 2006 Development of a detector based on a CVD-diamond for the use in radiotherapy facilities / S.V. Akulinichev, V.S. Klenov, L.V. Kravchuk, S.G. Lebedev, A.V. Feschenko, V.E. Yants // Вопросы атомной науки и техники. — 2006. — № 3. — С. 134-136. — Бібліогр.: 5 назв. — англ. 1562-6016 PACS: 29.40.Wk; 81.05.T https://nasplib.isofts.kiev.ua/handle/123456789/79868 High radiation hardness, chemical resistance, high temperature operation capabilities stimulate a growing interest to use diamond materials as detectors of ionizing radiation. Samples of CVD-diamond materials in sizes 4×3 mm and 4×1 mm with thickness from 50 microns up to 500 microns have been grown in INR RAS using a DC glow discharge in a mixture of gases CH4/H2 on molybdenum substrates. Высокая радиационная стойкость, стойкость к химическим воздействиям, температурная стабильность вызывают повышенный интерес к использованию алмазных материалов в качестве детекторов ионизирующих излучений. Образцы CVD-алмазных материалов размерами 4×3 и 4×1 мм толщиной от 50 до 500 мкм выращены в ИЯИ РАН методом газофазного осаждения в тлеющем разряде в смеси газов СН4/Н2 на подложках из молибдена. Висока радіаційна стійкість, стійкість до хімічних впливів, температурна стабільність викликають підвищений інтерес до використання алмазних матеріалів як детектори іонізуючих випромінювань. Зразки CVD-алмазних матеріалів розмірами 4×3 та 4×1 мм товщиною від 50 до 500 мкм вирощені в ІЯІ РАН методом газофазного осадження в жевріючому розряді в суміші газів СН4/Н2 на підкладках з молібдену. Special thanks are given to I.I. Vlasov (GPI RAS) for performing of Raman analysis and V. Vlasenko (CryoLab, MSU) for SEM images en Національний науковий центр «Харківський фізико-технічний інститут» НАН України Вопросы атомной науки и техники Применение ускорителей в радиационных технологиях Development of a detector based on a CVD-diamond for the use in radiotherapy facilities Разработка детектора на основе CVD-алмаза для использования в установках лучевой терапии Розробка детектора на основі CVD-алмазу для використання в установках променевої терапії Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Development of a detector based on a CVD-diamond for the use in radiotherapy facilities |
| spellingShingle |
Development of a detector based on a CVD-diamond for the use in radiotherapy facilities Akulinichev, S.V. Klenov, V.S. Kravchuk, L.V. Lebedev, S.G. Feschenko, A.V. Yants, V.E. Применение ускорителей в радиационных технологиях |
| title_short |
Development of a detector based on a CVD-diamond for the use in radiotherapy facilities |
| title_full |
Development of a detector based on a CVD-diamond for the use in radiotherapy facilities |
| title_fullStr |
Development of a detector based on a CVD-diamond for the use in radiotherapy facilities |
| title_full_unstemmed |
Development of a detector based on a CVD-diamond for the use in radiotherapy facilities |
| title_sort |
development of a detector based on a cvd-diamond for the use in radiotherapy facilities |
| author |
Akulinichev, S.V. Klenov, V.S. Kravchuk, L.V. Lebedev, S.G. Feschenko, A.V. Yants, V.E. |
| author_facet |
Akulinichev, S.V. Klenov, V.S. Kravchuk, L.V. Lebedev, S.G. Feschenko, A.V. Yants, V.E. |
| topic |
Применение ускорителей в радиационных технологиях |
| topic_facet |
Применение ускорителей в радиационных технологиях |
| publishDate |
2006 |
| language |
English |
| container_title |
Вопросы атомной науки и техники |
| publisher |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| format |
Article |
| title_alt |
Разработка детектора на основе CVD-алмаза для использования в установках лучевой терапии Розробка детектора на основі CVD-алмазу для використання в установках променевої терапії |
| description |
High radiation hardness, chemical resistance, high temperature operation capabilities stimulate a growing interest
to use diamond materials as detectors of ionizing radiation. Samples of CVD-diamond materials in sizes 4×3 mm
and 4×1 mm with thickness from 50 microns up to 500 microns have been grown in INR RAS using a DC glow discharge
in a mixture of gases CH4/H2 on molybdenum substrates.
Высокая радиационная стойкость, стойкость к химическим воздействиям, температурная стабильность вызывают повышенный интерес к использованию алмазных материалов в качестве детекторов ионизирующих излучений. Образцы CVD-алмазных материалов размерами 4×3 и 4×1 мм толщиной от 50 до 500 мкм выращены в ИЯИ РАН методом газофазного осаждения в тлеющем разряде в смеси газов СН4/Н2 на подложках из молибдена.
Висока радіаційна стійкість, стійкість до хімічних впливів, температурна стабільність викликають
підвищений інтерес до використання алмазних матеріалів як детектори іонізуючих випромінювань. Зразки
CVD-алмазних матеріалів розмірами 4×3 та 4×1 мм товщиною від 50 до 500 мкм вирощені в ІЯІ РАН
методом газофазного осадження в жевріючому розряді в суміші газів СН4/Н2 на підкладках з молібдену.
|
| issn |
1562-6016 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/79868 |
| citation_txt |
Development of a detector based on a CVD-diamond for the use in radiotherapy facilities / S.V. Akulinichev, V.S. Klenov, L.V. Kravchuk, S.G. Lebedev, A.V. Feschenko, V.E. Yants // Вопросы атомной науки и техники. — 2006. — № 3. — С. 134-136. — Бібліогр.: 5 назв. — англ. |
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2025-11-24T19:49:20Z |
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2025-11-24T19:49:20Z |
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1850494688840122368 |
| fulltext |
DEVELOPMENT OF A DETECTOR BASED ON A CVD-DIAMOND FOR
THE USE IN RADIOTHERAPY FACILITIES
S.V. Akulinichev, V.S. Klenov, L.V. Kravchuk, S.G. Lebedev, A.V. Feschenko, V.E. Yants
Institute for Nuclear Research of the Russian Academy of Sciences
60-th October Anniversary Prospect, 7A, Moscow, 117312
E-mail: klenov@inr.ru
High radiation hardness, chemical resistance, high temperature operation capabilities stimulate a growing inter-
est to use diamond materials as detectors of ionizing radiation. Samples of CVD-diamond materials in sizes 4×3 mm
and 4×1 mm with thickness from 50 microns up to 500 microns have been grown in INR RAS using a DC glow dis-
charge in a mixture of gases CH4/H2 on molybdenum substrates.
PACS: 29.40.Wk; 81.05.T
1. INTRODUCTION
A number of unique properties of diamond such as
extremely high radiation hardness, chemical resistance
against all chemicals, absolute non-toxicity call for an
increasing interest to use diamond materials as detectors
of ionizing radiation operating in hostile environments
or in conditions, imposing special requirements to sta-
bility of measurement of a doze, for example, in medi-
cal installations for radiotherapy. Moreover, the atomic
number of diamond Z = 6 that is close to the effective
atomic number of a soft tissue Z = 7.4, so the diamond
is a nearly tissue equivalent, that allows avoiding energy
dependent corrections of the detector signal. Initially,
natural diamonds with suitable electronic properties
were used in radiation detection [1]. The main disadvan-
tage of the natural diamond detectors is a high cost due
to extremely rare detector-grade natural diamond (Type
IIa), which limits the availability of these detectors and
moreover, electronic properties of diamond stones with-
in the Type IIa category can vary strongly. Therefore,
the production of sufficiently cheap diamond plates with
sizes at least 4 mm and thickness 50…500 µm with suf-
ficient quality to build the detector is rather an urgent
problem.
The promising technology for synthesis of diamond
materials is the Chemical Vapour Deposition (CVD)
technology, which allows growing diamond material
plates in controllable vacuum with specified thickness
and sizes, which are determined by sizes of substrates
and duration of the process. However, the CVD-dia-
mond has a polycrystalline structure with crystallites
sizes about 10…20% of thickness of grown plates, and
crystallites bounders could act as the traps and decrease
the charge collection efficiency [2, 3].
2. APPARATUS FOR CVD-DIAMOND
PLATES SYNTHESIS
We have developed a CVD apparatus based on a DC
glow discharge for manufacture of cost effective
CVD-diamond plates. This apparatus is schematically
shown in Fig.1. In the reaction chamber, the glow dis-
charge is sustained in a mixture of gases CH4 and H2 be-
tween molybdenum cathode 25 mm diameter and
molybdenum anode 11 mm diameter. The cathode is
mounted on the copper water-cooled holder. The front
surface of the anode is polished and segmented by
grooves 0.5 mm in depth into sites 4×1 mm or 4×3 mm,
which simultaneously are the substrates for the growth
of diamond plates. The conditions of synthesis (gas
pressure, power density in the discharge) are fitted in
such a manner, that the growth of diamond takes place
only on a surface of substrates.
Cathode
Anode
Insulator
Gas CH4/H2
Gas out
Water in
Water out
6 kV, 6 mA
PS
1 Mohm
PS
0 - 800 V
2 A
120 Ohm
1 ,6kOhm
TK
+
-
-
+
Reac tion
chamber
Fig.1. Scheme of CVD-diamond plates synthesis
It is well known that a glow discharge with a current
close to a critical one has a considerable probability to
transform into an arc discharge with drastic contraction
of a discharge channel, which could result in damages
of a growing material. To decrease a probability of these
transitions, similarly to [4], the pulse operating mode of
the discharge is used. The duration of pulses and pauses
of a discharge current is set by a transistor modulator
TK. The resistor connected in parallel to the TK is im-
portant as it provides decreasing of a current in a pause
____________________________________________________________
PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY. 2006. № 3.
Series: Nuclear Physics Investigations (47), p.134-136.134
mailto:klenov@inr.ru
not to zero, but up to a magnitude ~0.15Inom, which fa-
cilitates the subsequent transition to the rated current
and rises stability of operation. Furthermore, the transis-
tor modulator TK provides fast (~10 μs) switching-off a
discharge current source in case the discharge starts to
transform into an arc mode and a current exceeds a pre-
set value. The additional power supply with a constant
voltage of 6 kV is connected to the discharge gap in se-
ries with 1 MOhm resistor for providing a discharge ig-
nition in case of accidental extinction.
Synthesis of CVD-diamond plates was carried out
under the following conditions in the reaction chamber:
typical gas mixture – 2.5%CH4 in H2, gas pressure
300 Torr, discharge voltage 540 V, discharge current
1.7 A, current duty factor 95%.
Oscillogram of discharge current is shown in Fig.2.
Material growth rate in these conditions was around
12…15 μm/hour.
Fig.2. Oscillogram of the discharge current
3. CHARACTERIZATION OF THE GROWN
MATERIAL
In deposition runs lasted from 3 to 35 hours CVD di-
amond plates with the sizes 4×1 mm and 4×3 mm and
the thickness from 50 to 500 μm have been grown. Af-
ter deposition and cooling down the CVD-diamond
plates can be easily detached from the substrates due to
different thermal expansion of diamond and molybde-
num. The grown material has a polycrystalline structure
with a clearly visible in the cracked samples crystallites
of columnar shape elongated along the growth direction.
The facets of about 0.1…0.2 plate thickness can be ob-
served on the crystallites at a growth side of the plate.
Fig.3 shows the image of growth side of plate with
thickness 100 µm (scanning electron microscope). Fig.4
shows the spectra of Raman scattering analysis, which
was performed with argon laser on the wavelength
λ =514 nm, narrow diamond peak at 1333 cm-1 is clear
visible.
X-ray diffraction analysis of the plates was made us-
ing the diffractometer DRON-3 with CuKα1 line with
λ = 0.154057 nm. Fig.5 shows a XRD pattern measured
at the growth side of 500 μm plate.
4. CVD-DIAMOND DETECTION PER-
FORMANCE
The surface morphology of plates from a growth
side and from a substrate side is essentially different.
Whereas on the growth side the typical sizes of crystal-
lites make up tens of micron, on the substrate side these
sizes do not exceed a micron. The numerous defects on
crystallites borders can serve as traps for the charges in-
duced in the detector by ionizing particles.
Fig.3. Scanning electron microscope (SEM) image of
growth side 100 µm thickness plate
1200 1300 1400 1500 1600
20
30
40
50
60
70
80
In
te
ns
ity
, a
.u
.
Raman shift, cm-1
Fig.4. Raman spectra at growth surface of CVD dia-
mond plate
20 40 60 80 100 120
0
2000
4000
6000
8000
10000
Ar
bi
tra
ry
u
ni
ts
,N
Angles, 2Q
(111)
(220)
(311)
(400)
Fig.5. XRD pattern for 500 µm plate
In order to decrease an influence of these traps, the
coplanar type detecting device [5] was made with both
electrodes located on the growth side of the plate. The
distance between the electrodes makes up 200 micron.
____________________________________________________________
PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY. 2006. № 3.
Series: Nuclear Physics Investigations (47), p.134-136.135
For measurement of efficiency of collection of the
charges induced by incident alpha-particles, the installa-
tion schematically represented on Fig.6 has been assem-
bled.
238Pu a lpha sourc e
Bias
Voltage
Charge/Sens.
Pream p.
Shap ing
Am p.
M/Chan.
Ana lyzer
CVD
d iam ond
p la te
Fig.6. A schematic diagram of the charge collection ef-
ficiency measurement
We used a 238Pu α-particles source which emits
α-particles with the energy Eα = 5.5 MeV.
The estimated range of this particle in a diamond is
~ 13 µm. The total charge Qind, induced by α-particle
in a diamond Qind = eEα/ε, where ε = 13 eV is the en-
ergy of electron-hole creation in diamond. The charge
collected by non-uniform inter-electrode field of bias
voltage feed at entrance of charge sensitive preamplifier
followed by a shaping amplifier (Schlumberger Type
7129) and multichannel analyzer (Norland 5300). Pulse
height specters were measured as differences of counts
with and without α-source for exception of electronic
noise of a system. Pulse height spectra for a bias voltage
of 40 V are shown in Fig.7. The charge collection effi-
ciency was estimated as a ratio of collected and induced
charges and comes to around 1%.
5. CONCLUSION
Our measurements have demonstrated that relatively
cheap CVD diamond, produced by glow discharge, is
suitable for detecting of charged particles. Further in-
vestigations of radiation hardness and stability should
be made in the radiological center of INR RAS on the
beams of 200 MeV protons and 6 MeV photons.
0 20 40 60 80 100
0
1000
2000
3000
4000
C
ou
nt
s
(a
.u
.)
Channel number
Fig.7. Pulse height spectra for bias voltage 40 V
ACKNOWLEDGMENTS
Special thanks are given to I.I. Vlasov (GPI RAS)
for performing of Raman analysis and V. Vlasenko
(CryoLab, MSU) for SEM images.
REFERENCES
1. S.F. Kozlov, E.A. Konorova, Y.A. Kuznetsov et
al. // IEEE Trans. Nucl. Sci. 1977, NS-24, p.235.
2. C. Bauer, I. Baumann, C. Colledani et al. // Re-
cent results from RD-42 Diamond Detector Col-
laboration // Nucl. Instr. and Methods. 1996,
A383, p.64-74.
3. T. Bacci, E. Borchi, M. Bruzzi et al. Synthesis of
low leakage current chemical vapour deposition
(CVD) diamond for particle detection // Nucl.
Physics B (Proc. Suppl.). 1998, v.61B, p.303-
310.
4. S. Sciortino, S. Lagomarsino, F. Pieralli et al.
Polycrystalline diamond synthesis by means of
high power pulsed plasma glow discharge CVD
// Diamond and Rel. Materials. 2002, v.11,
p.573-578.
5. A. Galbiati, M.B.H. Breese, A.P. Knights et al.
Characterization of a coplanar CVD diamond ra-
diation detector // Nucl. Instr. and Methods.
2001, v.A466, p.52-57.
РАЗРАБОТКА ДЕТЕКТОРА НА ОСНОВЕ CVD-АЛМАЗА ДЛЯ ИСПОЛЬЗОВАНИЯ
В УСТАНОВКАХ ЛУЧЕВОЙ ТЕРАПИИ
С.В. Акулиничев, В.С. Кленов, Л.В. Кравчук, С.Г. Лебедев, А.В. Фещенко, В.Э. Янц
Высокая радиационная стойкость, стойкость к химическим воздействиям, температурная стабильность
вызывают повышенный интерес к использованию алмазных материалов в качестве детекторов ионизирую-
щих излучений. Образцы CVD-алмазных материалов размерами 4×3 и 4×1 мм толщиной от 50 до 500 мкм
выращены в ИЯИ РАН методом газофазного осаждения в тлеющем разряде в смеси газов СН4/Н2 на подлож-
ках из молибдена.
РОЗРОБКА ДЕТЕКТОРА НА ОСНОВІ CVD-АЛМАЗУ ДЛЯ ВИКОРИСТАННЯ
В УСТАНОВКАХ ПРОМЕНЕВОЇ ТЕРАПІЇ
С.В. Акулінічев, В.С. Кльонов, Л.В. Кравчук, С.Г. Лебедєв, А.В. Фещенко, В.Є. Янц
Висока радіаційна стійкість, стійкість до хімічних впливів, температурна стабільність викликають
підвищений інтерес до використання алмазних матеріалів як детектори іонізуючих випромінювань. Зразки
CVD-алмазних матеріалів розмірами 4×3 та 4×1 мм товщиною від 50 до 500 мкм вирощені в ІЯІ РАН
методом газофазного осадження в жевріючому розряді в суміші газів СН4/Н2 на підкладках з молібдену.
136
ACKNOWLEDGMENTS
REFERENCES
С.В. Акулиничев, В.С. Кленов, Л.В. Кравчук, С.Г. Лебедев, А.В. Фещенко, В.Э. Янц
С.В. Акулінічев, В.С. Кльонов, Л.В. Кравчук, С.Г. Лебедєв, А.В. Фещенко, В.Є. Янц
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