Temperature effect on the characteristics and lifetime of semiconductor detectors
The paper reports the results from studies into the effect of temperature on the performance characteristics of planar silicon detectors designed and manufactured at the NSC KIPT. A variety of techniques are demonstrated for measuring the temperature effect on various static and spectral character...
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| Published in: | Вопросы атомной науки и техники |
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| Date: | 2006 |
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2006
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| Cite this: | Temperature effect on the characteristics and lifetime of semiconductor detectors / G.P. Vasiliyev, A.V. Kosinov, V.I. Kulibaba, N.I. Maslov, S.V. Naumov, V.D. Ovchinnik, V.I. Yalovenko // Вопросы атомной науки и техники. — 2006. — № 3. — С. 137-139. — Бібліогр.: 11 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1859891913222520832 |
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| author | Vasiliyev, G.P. Kosinov, A.V. Kulibaba, V.I. Maslov, N.I. Naumov, S.V. Ovchinnik, V.D. Yalovenko, V.I. |
| author_facet | Vasiliyev, G.P. Kosinov, A.V. Kulibaba, V.I. Maslov, N.I. Naumov, S.V. Ovchinnik, V.D. Yalovenko, V.I. |
| citation_txt | Temperature effect on the characteristics and lifetime of semiconductor detectors / G.P. Vasiliyev, A.V. Kosinov, V.I. Kulibaba, N.I. Maslov, S.V. Naumov, V.D. Ovchinnik, V.I. Yalovenko // Вопросы атомной науки и техники. — 2006. — № 3. — С. 137-139. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Вопросы атомной науки и техники |
| description | The paper reports the results from studies into the effect of temperature on the performance characteristics of planar
silicon detectors designed and manufactured at the NSC KIPT. A variety of techniques are demonstrated for
measuring the temperature effect on various static and spectral characteristics of single-channel planar detectors. The
relationship between the static characteristics of detectors and their long-term stability and lifetime is considered.
Приведены результаты исследования воздействия температуры на характеристики планарных кремниевых детекторов, спроектированных и изготовленных в ННЦ ХФТИ. Показан ряд методик, позволяющих проводить измерения влияния температуры на различные статические и спектральные характеристики одноканальных планарных детекторов. Рассматривается связь статических характеристик детекторов с долговременной стабильностью и временем жизни детекторов.
Приведені результати досліджень впливу температури на характеристики пласких кремнієвих детекторів,
спроектованих та виготовлених у ННЦ ХФТІ. Продемонстровано ряд методик, які дозволяють проводити
вимірювання впливу температури на різні статичні та спектральні характеристики одноканальних пласких
детекторів. Розглянуто зв’язок статичних характеристик детекторів з довгостроковою стабільністю та часом
життя детекторів.
|
| first_indexed | 2025-12-07T15:54:03Z |
| format | Article |
| fulltext |
TEMPERATURE EFFECT ON THE CHARACTERISTICS AND LIFE-
TIME OF SEMICONDUCTOR DETECTORS
G.P. Vasiliyev, A.V. Kosinov, V.I. Kulibaba, N.I. Maslov, S.V. Naumov, V.D. Ovchinnik,
V.I. Yalovenko
NSC KIPT, Kharkov, Ukraine
E-mail: NIKOLAI.MASLOV@KIPT.KHARKOV.UA
The paper reports the results from studies into the effect of temperature on the performance characteristics of pla-
nar silicon detectors designed and manufactured at the NSC KIPT. A variety of techniques are demonstrated for
measuring the temperature effect on various static and spectral characteristics of single-channel planar detectors. The
relationship between the static characteristics of detectors and their long-term stability and lifetime is considered.
PACS: 29.40.Wk
1. INTRODUCTION
An important factor in the operation of silicon detec-
tors that influences their performance characteristics is
the temperature. It may exert an effect on many vital op-
eration parameters of silicon detectors, such as dark
leakage currents and energy resolution. It is known [1]
that the studies of the behavior of detector characteris-
tics at different temperature conditions may provide pre-
diction of the nonfailure operation time of the detector.
With a more detailed investigation into the behavior of
both static and spectral characteristics of silicon detec-
tors versus temperature it appears possible to determine
the physical processes of parameter destabilization with
time, this being of primary importance at long-term us-
age of the detectors.
2. TEMPERATURE-LIFETIME INTER-
RELATION OF SI PHOTODIODE
Specialists concerned with the reliability of products
often describe the lifetime of a product population with
the use of a graphic representation called the U-curve [2].
Fig.1 shows the U-like curve that consists of three
periods: i) the initial period with a decreasing failure fre-
quency followed by ii) the normal period of service
(also known as useful period) with a low, relatively con-
stant frequency of failures, and iii) the final period or the
wear-out period, which exhibits an increasing failure
frequency.
Fig.1. Schematic diagram of detector lifetime stages
In long-term stability tests of semiconductor detec-
tors and in the determination of their lifetimes the tech-
nique is used, which makes it possible to reject inade-
quate-quality detectors at the initial stage of detecting
module production, and also to establish the reasons of
their failure.
The essence of the technique consists in the follow-
ing. It is known [3] that under the action of elevated
temperature and bias voltage the probability that defects
will manifest themselves in a semiconductor crystal in-
creases. The tests of the kind, where nonstandard modes
of semiconductor operation are used, are referred to as
“accelerated tests”.
Accelerated lifetime tests are generally used to ob-
tain more quickly the information on the life expectancy
of products and materials, and also to simulate the
mechanisms of failures that may occur throughout the
service life of the product. The accelerated test implies
that the products will be subjected to the conditions
which will be more severe than normal ones, and which
would be never attained at ordinary use of the product.
If there is a speed-up effect, then the variation in the
stress is equivalent to the time scale transformation.
Let us briefly consider the basic failure mechanisms
of semiconductor products. There are three main causes
of semiconductor failures: the failures associated with
electrical voltage, internal failures and external causes
of faults.
The failures due to degradation of the semiconductor
itself are called internal failures. These mechanisms are
generally connected with the process of wafer produc-
tion and involve crystal defects, dislocations and pro-
cess-induced defects, oxide breakdown, ionic soil, sur-
face charge propagation, etc. The mentioned defects
generally result either from a poor processing of a crys-
tal, or from a nonuniform growth of the oxide layer. On
the contrary, the soiling is usually a consequence of en-
vironmental influences, human factor (surface contact,
etc.), processing or packing. The external causes of fail-
ure are connected with the external conditions. The fail-
ures generally result from a wrong stacking of semicon-
ductor products, and also from the interaction of struc-
tural materials.
The model approximations used to simulate the ac-
celerated lifetime include Arrhenius model [5], Airing
model [6], and others.
Arrhenius model describes relationship between the
failure occurrence time of electronics components and
the temperature. According to this model, relationship
between the stress and the lifetime is given by
____________________________________________________________
PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY. 2006. № 3.
Series: Nuclear Physics Investigations (47), p.137-139.
137
mailto:nikolai.maslov@kipt.kharkov.ua
KT
Ea
CeTL =)( .
Here C is the parameter to be estimated, Ea is the ac-
tivation energy (eV), and k is the Boltzmann constant
(8.617·10-5 eV/K).
With the use of the maximum likelihood theory [7],
the parameters of the Arrhenius model are estimated in
the assumption that the basis for the lifetime distribution
of the sample is the Waybull distribution [8].
The acceleration factor is determined in this case as
accel
use
L
L
AF = .
It shows the ratio of the lifetime at normal conditions to
the lifetime at accelerated tests.
As the activation energy can be calculated, we have
−
−
== acceluse
a
accel
a
use
a
TTK
E
KT
E
KT
E
eeAF
11
.
Here Tuse is the temperature at normal operating condi-
tions; Taccel is the temperature at accelerated tests.
The humidity and the bias voltage of the detector
play an important role in many mechanisms responsible
for the abnormal performance of semiconductor prod-
ucts. The general model that includes three parameters
(temperature, bias voltage and humidity) has the follow-
ing form [9]:
γβ −−
∆
= RHVAet kT
H
f
.
Here RH denotes the percentage of humidity, ΔΗ is
the activation energy, and V is the bias voltage.
In the general case, the Airing model can be used to
simulate acceleration when many stress factors are taken
into account.
At present, there is an extensive software base that
makes it possible to simplify the calculations and pro-
vides an easy-to-use interface [10].
3. TEMPERATURE EFFECT ON THE
CHARACTERISTICS OF PLANAR
DETECTORS
In spectrometry measurements carried out with semi-
conductor detectors, the working temperature of the de-
tector is one of the key factors that limit the possibility
of attaining high energy resolution. In the present work
most attention has been given to the temperature depen-
dence of dark leakage current of the p-n junction of the
planar silicon pin-detector. Previously, we have mea-
sured the temperature dependence of leakage current of
detector structure elements having different active zone
areas and different current-voltage characteristics, and
have demonstrated that the energy resolution of the de-
tector is mainly determined by dark leakage currents of
the active area of the detector.
To investigate the influence of temperature on the
static characteristics of detectors, a multichannel stand
was used as a basic setup, while a special probe adapter
was used to investigate spectral characteristics.
It should be specially noted that the temperature de-
pendence of leakage currents is individual for each de-
tector, and to estimate correctly the temperature effect
on the energy resolution and dark leakage currents, it is
necessary to know the specific dependence I(T) for each
detector.
Using the thermocycling technique we have found an
unstable operation of the p-n junction of a pin-detector
having a low prebreakdown voltage. The instability
manifests itself in the variation of the leakage current of
the active area depending on the number of heating cy-
cles.
Fig.2 shows the behavior of the leakage current at
the maximum bias voltage after different stages of detec-
tor heating.
1 2 3 4 5
0,2
0,4
0,6
0,8
1,0
1,2
1,4
1,6
1,8
17.3 0C16.25 0C18.5 0C
C
ur
re
nt
, n
A
Number of test
U = 40 V
Active area (5x5) M7
Guard ring M7
Leakage current at the maximum
of voltage-current characteristic
and before temperature raising
Fig.2. Leakage currents of the active area and the
guard ring at the working bias voltage at different
stages after annealing
It can be seen that the leakage current of the active
area, measured at room temperature, falls off with an in-
creasing number of heating cycles. Since the range of
working temperatures in different experiments varies
within wide limits (from liquid nitrogen temperatures up
to ~ 50°C and higher), there arises the question about the
behavior of the leakage current at temperatures different
from room temperature.
Experiments show that the leakage current of the ac-
tive area substantially increases after a few heating cy-
cles.
Fig.3 shows the rise in the leakage current of the ac-
tive area at the working bias voltage and a temperature
of 40°C as a function of the number of heating cycles. It
is obvious that the dark leakage current of the p-n junc-
tion has substantially increased. This instability is inad-
missible for operation of the detector at different ambi-
ent temperatures. Consequently, with the help of the
technique described, it appears possible to reject the de-
fective detectors at the initial stage of detecting module
production.
138
1 2 3 4
5
10
15
20
25
30
35
I,
nA
stage
M7
Active area leakage current
U = 40 V
T = 40 0C
Fig.3. Leakage current of the active area at 40°C at dif-
ferent stages of heating
4. CONCLUSIONS
It has been shown that the temperature is an essential
parameter that must be taken into account at operation
of semiconductor detectors. By using specially devel-
oped methods it is possible to determine the degree of
the temperature effect on an individual detector, and to
properly correct the energy resolution with due regard
for temperature variations. The accelerated test tech-
nique can be used to determine the lifetime of a semi-
conductor detector, and also to establish the main mech-
anisms of abnormal operation of the detector under ex-
amination.
REFERENCES
1. http://www.reed-electronics.com/tmworld/
2. http://www.itl.nist.gov/div898/handbook/apr/sec-
tion1/apr124.htm
3. http://www.itl.nist.gov/div898/handbook/apr/sec-
tion1/apr14.htm
4. http://www.weibull.com/hotwire/issue21/hot-
topics21.htm
5. http://www.chinarel.com/AccelTestWeb/arrhe-
nius_relationship_chap_.htm
6. http://www.itl.nist.gov/div898/handbook/apr/sec-
tion1/apr152.htm
7. http://www.chinarel.com/LifeDataWeb/maxi-
mum_likelihood_estimation_appendix.htm
8. http://www.chinarel.com/LifeDataWeb/the_weib
ull_distribution.htm
9. http://www.itl.nist.gov/div898/handbook/apr/sec-
tion1/apr153.htm#ThreeStressModels(Temperature,
Voltage and
10. http://www.reliasoft.com/
11. http://www.ortec-
online.com/detectors/chargedparticle/introduction/leak
age.htm
ВЛИЯНИЕ ТЕМПЕРАТУРЫ НА ХАРАКТЕРИСТИКИ И ВРЕМЯ ЖИЗНИ ПОЛУПРОВОДНИ-
КОВЫХ ДЕТЕКТОРОВ
Г.П. Васильев, А.В. Косинов, В.И. Кулибаба, Н.И. Маслов, С.В. Наумов, В.Д. Овчинник, В.И. Яловенко
Приведены результаты исследования воздействия температуры на характеристики планарных кремние-
вых детекторов, спроектированных и изготовленных в ННЦ ХФТИ. Показан ряд методик, позволяющих
проводить измерения влияния температуры на различные статические и спектральные характеристики одно-
канальных планарных детекторов. Рассматривается связь статических характеристик детекторов с долговре-
менной стабильностью и временем жизни детекторов.
ВПЛИВ ТЕМПЕРАТУРИ НА ХАРАКТЕРИСТИКИ ТА ЧАС ЖИТТЯ НАПІВПРОВІДНИКОВИХ
ДЕТЕКТОРІВ
Г.П. Васил’єв, О.В. Косінов, В.І. Кулібаба, М.І. Маслов, С.В. Наумов, В.Д. Овчинник, В.І. Яловенко
Приведені результати досліджень впливу температури на характеристики пласких кремнієвих детекторів,
спроектованих та виготовлених у ННЦ ХФТІ. Продемонстровано ряд методик, які дозволяють проводити
вимірювання впливу температури на різні статичні та спектральні характеристики одноканальних пласких
детекторів. Розглянуто зв’язок статичних характеристик детекторів з довгостроковою стабільністю та часом
життя детекторів.
____________________________________________________________
PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY. 2006. № 3.
Series: Nuclear Physics Investigations (47), p.137-139.
139
PACS: 29.40.Wk
3. Temperature effect on the characteristics of planar detectors
Fig.2. Leakage currents of the active area and the guard ring at the working bias voltage at different stages after annealing
REFERENCES
|
| id | nasplib_isofts_kiev_ua-123456789-79871 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1562-6016 |
| language | English |
| last_indexed | 2025-12-07T15:54:03Z |
| publishDate | 2006 |
| publisher | Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| record_format | dspace |
| spelling | Vasiliyev, G.P. Kosinov, A.V. Kulibaba, V.I. Maslov, N.I. Naumov, S.V. Ovchinnik, V.D. Yalovenko, V.I. 2015-04-06T14:42:22Z 2015-04-06T14:42:22Z 2006 Temperature effect on the characteristics and lifetime of semiconductor detectors / G.P. Vasiliyev, A.V. Kosinov, V.I. Kulibaba, N.I. Maslov, S.V. Naumov, V.D. Ovchinnik, V.I. Yalovenko // Вопросы атомной науки и техники. — 2006. — № 3. — С. 137-139. — Бібліогр.: 11 назв. — англ. 1562-6016 PACS: 29.40.Wk https://nasplib.isofts.kiev.ua/handle/123456789/79871 The paper reports the results from studies into the effect of temperature on the performance characteristics of planar silicon detectors designed and manufactured at the NSC KIPT. A variety of techniques are demonstrated for measuring the temperature effect on various static and spectral characteristics of single-channel planar detectors. The relationship between the static characteristics of detectors and their long-term stability and lifetime is considered. Приведены результаты исследования воздействия температуры на характеристики планарных кремниевых детекторов, спроектированных и изготовленных в ННЦ ХФТИ. Показан ряд методик, позволяющих проводить измерения влияния температуры на различные статические и спектральные характеристики одноканальных планарных детекторов. Рассматривается связь статических характеристик детекторов с долговременной стабильностью и временем жизни детекторов. Приведені результати досліджень впливу температури на характеристики пласких кремнієвих детекторів, спроектованих та виготовлених у ННЦ ХФТІ. Продемонстровано ряд методик, які дозволяють проводити вимірювання впливу температури на різні статичні та спектральні характеристики одноканальних пласких детекторів. Розглянуто зв’язок статичних характеристик детекторів з довгостроковою стабільністю та часом життя детекторів. en Національний науковий центр «Харківський фізико-технічний інститут» НАН України Вопросы атомной науки и техники Применение ускорителей в радиационных технологиях Temperature effect on the characteristics and lifetime of semiconductor detectors Влияние температуры на характеристики и время жизни полупроводниковых детекторов Вплив температури на характеристики та час життя напівпровідникових детекторів Article published earlier |
| spellingShingle | Temperature effect on the characteristics and lifetime of semiconductor detectors Vasiliyev, G.P. Kosinov, A.V. Kulibaba, V.I. Maslov, N.I. Naumov, S.V. Ovchinnik, V.D. Yalovenko, V.I. Применение ускорителей в радиационных технологиях |
| title | Temperature effect on the characteristics and lifetime of semiconductor detectors |
| title_alt | Влияние температуры на характеристики и время жизни полупроводниковых детекторов Вплив температури на характеристики та час життя напівпровідникових детекторів |
| title_full | Temperature effect on the characteristics and lifetime of semiconductor detectors |
| title_fullStr | Temperature effect on the characteristics and lifetime of semiconductor detectors |
| title_full_unstemmed | Temperature effect on the characteristics and lifetime of semiconductor detectors |
| title_short | Temperature effect on the characteristics and lifetime of semiconductor detectors |
| title_sort | temperature effect on the characteristics and lifetime of semiconductor detectors |
| topic | Применение ускорителей в радиационных технологиях |
| topic_facet | Применение ускорителей в радиационных технологиях |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/79871 |
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