An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties
In the paper the processes of accumulation of radiation defects, formed by fragments of ²³⁸U nucleus fission, for forming of amorphous phases in the bulk of single-crystal silicon and the influence of the temperature annealing of defects on the properties of disordered structures are investigated....
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| Cite this: | An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties / A.N. Dovbnya, V.P. Yefimov, G.D. Pugachev, V.S. Dyomin, N.A. Dovbnya, J.E. Gordienko, B.G. Borodin, S.V. Babychenko, T.A. Semenets // Вопросы атомной науки и техники. — 2006. — № 3. — С. 179-181. — Бібліогр.: 4 назв. — англ. |
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Dovbnya, A.N. Yefimov, V.P. Pugachev, G.D. Dyomin, V.S. Dovbnya, N.A. Gordienko, J.E. Borodin, B.G. Babychenko, S.V. Semenets, T.A. 2015-04-06T15:54:26Z 2015-04-06T15:54:26Z 2006 An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties / A.N. Dovbnya, V.P. Yefimov, G.D. Pugachev, V.S. Dyomin, N.A. Dovbnya, J.E. Gordienko, B.G. Borodin, S.V. Babychenko, T.A. Semenets // Вопросы атомной науки и техники. — 2006. — № 3. — С. 179-181. — Бібліогр.: 4 назв. — англ. 1562-6016 PACS: 61.82. Fk https://nasplib.isofts.kiev.ua/handle/123456789/79885 In the paper the processes of accumulation of radiation defects, formed by fragments of ²³⁸U nucleus fission, for forming of amorphous phases in the bulk of single-crystal silicon and the influence of the temperature annealing of defects on the properties of disordered structures are investigated. Исследуются процессы накопления радиационных дефектов, образованных осколками деления ядер ²³⁸U, для формирования аморфных фаз в объеме монокристаллического кремния и влияния температуры отжига дефектов на свойства разупорядоченных структур. Досліджуються процеси накопичення радіаційних дефектів, утворених осколками ділення ядер ²³⁸U, для формування аморфних фаз в об'ємі монокристалічного кремнію та впливу температури віджига дефектів на властивості розупорядкованих структур. en Національний науковий центр «Харківський фізико-технічний інститут» НАН України Вопросы атомной науки и техники Применение ускорителей в радиационных технологиях An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties Воздействие γ-облучения и осколков ядер ²³⁸U на свойства монокристаллического кремния Вплив γ-опромінення та осколків ядер ²³⁸U на властивості монокристалічного кремнію Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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| title |
An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties |
| spellingShingle |
An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties Dovbnya, A.N. Yefimov, V.P. Pugachev, G.D. Dyomin, V.S. Dovbnya, N.A. Gordienko, J.E. Borodin, B.G. Babychenko, S.V. Semenets, T.A. Применение ускорителей в радиационных технологиях |
| title_short |
An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties |
| title_full |
An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties |
| title_fullStr |
An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties |
| title_full_unstemmed |
An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties |
| title_sort |
influence of gamma-irradiation and ²³⁸u fragments on single-crystal silicon properties |
| author |
Dovbnya, A.N. Yefimov, V.P. Pugachev, G.D. Dyomin, V.S. Dovbnya, N.A. Gordienko, J.E. Borodin, B.G. Babychenko, S.V. Semenets, T.A. |
| author_facet |
Dovbnya, A.N. Yefimov, V.P. Pugachev, G.D. Dyomin, V.S. Dovbnya, N.A. Gordienko, J.E. Borodin, B.G. Babychenko, S.V. Semenets, T.A. |
| topic |
Применение ускорителей в радиационных технологиях |
| topic_facet |
Применение ускорителей в радиационных технологиях |
| publishDate |
2006 |
| language |
English |
| container_title |
Вопросы атомной науки и техники |
| publisher |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| format |
Article |
| title_alt |
Воздействие γ-облучения и осколков ядер ²³⁸U на свойства монокристаллического кремния Вплив γ-опромінення та осколків ядер ²³⁸U на властивості монокристалічного кремнію |
| description |
In the paper the processes of accumulation of radiation defects, formed by fragments of ²³⁸U nucleus fission, for forming of amorphous phases in the bulk of single-crystal silicon and the influence of the temperature annealing of defects on the properties of disordered structures are investigated.
Исследуются процессы накопления радиационных дефектов, образованных осколками деления ядер ²³⁸U, для формирования аморфных фаз в объеме монокристаллического кремния и влияния температуры отжига дефектов на свойства разупорядоченных структур.
Досліджуються процеси накопичення радіаційних дефектів, утворених осколками ділення ядер ²³⁸U, для формування аморфних фаз в об'ємі монокристалічного кремнію та впливу температури віджига дефектів на властивості розупорядкованих структур.
|
| issn |
1562-6016 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/79885 |
| citation_txt |
An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties / A.N. Dovbnya, V.P. Yefimov, G.D. Pugachev, V.S. Dyomin, N.A. Dovbnya, J.E. Gordienko, B.G. Borodin, S.V. Babychenko, T.A. Semenets // Вопросы атомной науки и техники. — 2006. — № 3. — С. 179-181. — Бібліогр.: 4 назв. — англ. |
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2025-11-26T07:52:10Z |
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AN INFLUENCE OF GAMMA-IRRADIATION AND 238U FRAGMENTS
ON SINGLE-CRYSTAL SILICON PROPERTIES
A.N. Dovbnya, V.P. Yefimov, G.D. Pugachev, V.S. Dyomin, N.A. Dovbnya, J.E. Gordienko1,
B.G. Borodin1, S.V. Babychenko1, T.A. Semenets1
NSC KIPT, Kharkov, Ukraine
1Kharkov National University of Radioelectronics, Kharkov, Ukraine
E-mail: yefimov@kipt.kharkov.ua
In the paper the processes of accumulation of radiation defects, formed by fragments of 238U nucleus fission, for
forming of amorphous phases in the bulk of single-crystal silicon and the influence of the temperature annealing of
defects on the properties of disordered structures are investigated.
PACS: 61.82. Fk
I. RADIATION MODIFICATION OF (С-SI)-
SEMICONDUCTOR
The experiment was carried out on a scanning beam
of γ-quanta of the linear technological accelerator with a
maximal energy of the scanning beam of 12 MeV
convertible electrons. The object of research was a
series of two samples of the (c-Si)-crystal, cut out from
the wafer-plate of a 396 µm thickness irradiated
simultaneously with γ-quanta of bremsstrahlung
radiation spectrum, the absorbed doze being 0.12 МGr.
The absorbed doze power in the site of the silicon
assembly location was 8 kGr/h. Before one of the
samples the target of 238U salts was mounted for creation
of nucleus photofission fragments formed under action
of γ-quanta. The schematic representation of the
experiment is given in Fig.1.
Fig.1. The schematic representation of irradiation of
the silicon assembly irradiation with γ–quanta at the
linear technological electron accelerator (KUT–1)
The number of nucleus fission fragments implanted
into the semiconductor, under conditions of this
experiment, is determined from the expression
( ) ( )
max
max , ,
thres
E
я
E
Y n E f E E dE
γ
γ
γ γ γ γσ= ∫ (1)
where σ(Еγ) – the cross-section of 238U nucleus fission
as a function of γ-quanta energy (Еγ), nя – the number of
238U nucleus per cm2, f(Еγmax,Еγ) – the transformed
spectrum of bremsstrahlung γ-quanta, Еγ thres=5 MeV –
threshold of reaction of division the nucleus 238U, Еγmax –
maximal energy of γ-quanta in the radiation spectrum.
For the 238U target of a thickness δ∼1µg/cm2, calculated
by the program "GEANT", the value of Y was 5.4⋅
106 fragments /cm2⋅h [1].
2. PROCESS OF DEFECT ACCUMULATION
IN THE SILICON STRUCTURE
To describe the process of semiconductor structure
disordering we introduced the function of state [2]
characterizing a nonannealed part of defects and
normalizing the initial defect concentration to unit
1
0
1
1
0
1
an
−−
−−
−
−
=
tt
tt
f
ir
, (2)
where to, tir, tan are the values of lifetime of charge
carriers in the samples before irradiation, after
irradiation and after annealing, respectively. At tan= tо
the value of the function f=0 corresponds to the full
annealing of radiation defects. At tan=tir the function f=1,
that means the absence of radiation defect annealing.
The lifetime of charge carriers was measured by the
phase method [3] with the help of light-emitting diodes
having a maximum of spectral radiation distribution on
the wavelength of 0.55 µm. Thus, the depth of
photoabsorption does not exceed the depth (∼10µm) of
238U fragments penetration into the (с-Si)-structure of
the semiconductor. The crystal was placed in the cut of
the resonator actuated by the microwave oscillator at the
frequency of 37500 MHz and was illuminated with the
light-emitting diode supplied from the low-frequency
harmonic signal generator. The photoconductivity signal
was detected by the microwave diode, amplified by the
selective amplifier and was recorded directly with the
help of the synchronous detector.
The lifetime is determined from the relationship
ftg tϕ ω= Ч , (3)
where ϕ is the angle of phase shift between
photocurrent and the light signal, arising due to the
photoconductivity process persistence, ω is the
frequency of the low-frequency generator.
The phase method was used to record the decrease in
the charge carrier lifetime ( )ft from 28.6µs down to
19.4µs on the side of the sample under irradiation with
γ-quanta implantation of 238U fragments. The values of
the function of state, calculated by the experimental
____________________________________________________________
PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY. 2006. № 3.
Series: Nuclear Physics Investigations (47), p.179-181. 179
results of measurements of the charge carrier lifetime in
the sample irradiated only with γ-quanta (designated by
circles) and in the sample irradiated with γ-quanta with
implantation of 238U fragments (designated by squares),
as a function of annealing temperature are given in
Fig.2. From various characters of functional
dependences of structures states it follows that, in the
region of fragment implantation in the semiconductor,
the process of defect accumulation is observed.
Fig.2. Functions f(γ) and f(γ + 238U fragments) versus annealing temperature
The defect accumulation will grow with the
increase in the irradiation doze, energy and γ-quanta
beam fluency on the uranium target. The temperature
treatment of the semiconductor by annealing of
radiation defects enables to receive the values of the
structure states of the function f→1 for uranium
nucleus fission fragments and of the function f→0 for
point defects from gamma radiation.
3. CONDUCTIVITY OF THE STRUCTURE
BY THE DAMAGES CREATED BY 238U
FRAGMENTS
By breakdown of large complexes of disordered
structures along the tracks of heavy particles,
elementary defects are liberated and microcrystalline
structures with a grain size of some nanometers are
formed, resulting in the formation of conducting
layers. The conductivity dominates in such structures
and is defined by overlapping of separate disordered
areas [4]. Experimental results on annealing of the
sample structure after treatment it by γ–irradiation and
238U fragments are given in Fig.3. The resistivity (ρ) of
a sample was determined by the 4 probe technique and
estimated from the relationship
2 3
1 4ln 2
U
I
ρ −
−
π= ⋅ , (4)
where U2–3 is the voltage, I1–4 is the current in the
circuit between corresponding probes.
-2
-1
0
1
0 50 100 150 200 250 300 350 400
Annealing t emperat ure, 0C
R
es
is
tiv
ity
lg
ρ
, O
hm
•c
m
Fig.3. Resistivity of the sample irradiated with γ-quanta by a doze of 120 kGr with implantation of 238U
fragments as a function of the annealing temperature
4. CONCLUSIONS
In the sample irradiated with γ-quanta and under
implantation of 238U fragments the process of radiation
defect accumulation takes place. For creation of
amorphous phases in the structure of lateral formations in
the (c-Si)-semiconductor the irradiation doze should be
increased up to ∼8 МGr at an electron energy of 12 MeV.
The increase in the conductivity by the structure
damages along the tracks of uranium nucleus fragments
at low annealing temperature (∼1000С) can be used for
the output of charge carriers with a weak mobility from
the semiconductor bulk. Thus, the single-crystal
structure of a silicon matrix will be used as the transport
environment for the charge carriers being very mobile.
180
REFERENCES
1. A.N. Dovbnya, V.P. Yefimov, G.D. Pugachev et al.
Forming of disordered structures and their
transformation into the amorphous phase in the bulk
of the (c-Si)-semiconductor by the nucleus
fragments being formed under γ-quanta irradiation
of fissile materials // Novye technologii. 2005, №1-2
(7-8), р.11-16 (in Russian).
2. I.D. Konozenko, A.K. Semenyuk, V.I. Khivrich.
Radiation effects in silicon. Kiev: "Naukova
dumka", 1974 (in Russian).
3. Yu.E. Gordienko, B.G. Borodin, A.A. Ryabukhin.
Photomodulating diagnostics of semiconductor
structures // Radiotekhnika. 1999, v.111, p.7-13 (in
Russian).
4. L.V. Lezhejko, N.B. Pridachin, L.S. Smirnov. On
the conductivity in semiconductors by the damages
created by bombardment with heavy particles //
Fizika Tech. Phys. 1972, v.6, №5, p.899-902 (in
Russian).
ВОЗДЕЙСТВИЕ γ- ОБЛУЧЕНИЯ И ОСКОЛКОВ ЯДЕР 238U НА СВОЙСТВА МОНОКРИСТАЛЛИ-
ЧЕСКОГО КРЕМНИЯ
А.Н. Довбня, В.П. Ефимов, Г.Д. Пугачев, В.С. Демин, Н.А. Довбня, Ю.Е. Гордиенко, Б.Г. Бородин,
С.В. Бабыченко, Т.А. Семенец
Исследуются процессы накопления радиационных дефектов, образованных осколками деления ядер 238U,
для формирования аморфных фаз в объеме монокристаллического кремния и влияния температуры отжига
дефектов на свойства разупорядоченных структур.
ВПЛИВ γ- ОПРОМІНЕННЯ ТА ОСКОЛКІВ ЯДЕР 238U НА ВЛАСТИВОСТІ
МОНОКРИСТАЛІЧНОГО КРЕМНІЮ
А.М. Довбня, В.П. Єфімов, Г.Д. Пугачьов, В.С. Дьомін, Н.А. Довбня,Ю.О. Гордієнко, Б.Г. Бородін,
С.В. Бабиченко, Т.А. Семенець
Досліджуються процеси накопичення радіаційних дефектів, утворених осколками ділення ядер 238U, для
формування аморфних фаз в об'ємі монокристалічного кремнію та впливу температури віджига дефектів на
властивості розупорядкованих структур.
____________________________________________________________
PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY. 2006. № 3.
Series: Nuclear Physics Investigations (47), p.179-181. 181
А.Н. Довбня, В.П. Ефимов, Г.Д. Пугачев, В.С. Демин, Н.А. Довбня, Ю.Е. Гордиенко, Б.Г. Бородин, С.В. Бабыченко, Т.А. Семенец
А.М. Довбня, В.П. Єфімов, Г.Д. Пугачьов, В.С. Дьомін, Н.А. Довбня,Ю.О. Гордієнко, Б.Г. Бородін, С.В. Бабиченко, Т.А. Семенець
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